PH3230S

PH3230S NEXPERIA | Alldatasheet

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Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

1.1 General description

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Table 1. Quick reference

PH3230S_4 © NXP B.V. 2009. All rights reserved. Table 2. Pinning information Table 3. Ordering information Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).

PH3230S_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 27 November 2009 3 of 12 NXP Semiconductors PH3230S N-channel TrenchMOS intermediate level FET Fig 1. Normalized continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 120 0 50 100 150 200 Tmb (°C) Ider (%) 003aaa629 03ah31 120 0 50 100 150 200 Tmb (°C) Pder (%) 03al32 102 103 10-1 1 10 10 2 VDS (V) ID (A) DC 1 ms 100 μs Limit RDSon = VDS / ID 10 ms 100 ms 10 μstp =

PH3230S_4 © NXP B.V. 2009. All rights reserved. Table 5. Thermal characteristics

PH3230S_4 © NXP B.V. 2009. All rights reserved. Table 6. Characteristics

PH3230S_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 27 November 2009 6 of 12 NXP Semiconductors PH3230S N-channel TrenchMOS intermediate level FET Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 7. Sub-threshold drain current as a function of gate-source voltage Fig 8. Gate-source threshold voltage as a function of junction temperature 03al33 100 0 0.5 1 1.5 2 VDS (V) ID (A) 4.5510 VGS (V) = 3.5 03al36 0246 VGS (V) ID (A) Tj = 25 °C150 °C 03al42 10−6 10−5 10−4 10−3 10−2 10−1

01234 VGS (V)

(A) min typ max 03al41 −80 0 80 160 Tj (°C) VGS(th) (V) max typ min

PH3230S_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 27 November 2009 7 of 12 NXP Semiconductors PH3230S N-channel TrenchMOS intermediate level FET Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 10. Drain-source on-state resistance as a function of drain current; typical values Fig 11. Source current as a function of source-drain voltage; typical values Fig 12. Gate-source voltage as a function of gate charge; typical values Tj (°C) −60 180 12006 0 03al35 1.0 0.5 1.5 2.0 a 03al34 2.5 7.5 0 25 50 75 100 ID (A) RDSon (mΩ) 4.5VGS (V) = 4 03al38 100 0.0 0.5 1.0 1.5 VSD (V) IS (A) Tj = 25 °C150 °C 03al40 0 25 50 75 100 Q G (nC) VGS (V)

PH3230S_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 27 November 2009 8 of 12 NXP Semiconductors PH3230S N-channel TrenchMOS intermediate level FET Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 14. Forward transconductance as a function of drain current; typical values 03al39 VDS (V) 10−1 102101 103 104 C pF) 102 Ciss Coss Crss 03al37 120 0 2 04 06 08 0 ID (A) gfs (S) Tj = 25 °C 150 °C

PH3230S_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 27 November 2009 9 of 12 NXP Semiconductors PH3230S N-channel TrenchMOS intermediate level FET 7. Package outline Fig 15. Package outline SOT669 (LFPAK) REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT669 MO-235 04-10-13 06-03-16 0 2.5 5 mm scale e b A2 bcA eUNIT DIMENSIONS (mm are the original dimensions) mm 1.10 0.95 A3A1 0.15 0.00 1.20 1.01 0.50 0.35 4.41 3.62 2.2 2.0 0.9 0.7 0.25 0.19 0.30 0.24 4.10 3.80 6.2 5.8 H 1.3 0.8 0.85 0.40 L 1.3 0.8 wyD(1) 5.0 4.8 E(1) 3.3 3.1 (1)D1(1) max 1 23 4 mounting base c Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 E H D A Aw M C C X 1/2 e yC θ θ (A )3 L A detail X Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

PH3230S_4 © NXP B.V. 2009. All rights reserved. Table 7. Revision history

• The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate. PH3230S-03 (9397 750 12756)

20040302 Product data - PH3230S-02

20030423 Product data - PH3230S-01

20030212 Preliminary data - -

PH3230S_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 27 November 2009 11 of 12 NXP Semiconductors PH3230S N-channel TrenchMOS intermediate level FET 9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com.

9.2 Definitions

Draft— The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet— A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

9.3 Disclaimers

General— Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes— NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use— NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications— Applications that are desc ribed herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data— The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values— Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale— NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license— Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control— This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— is a trademark of NXP B.V. 10. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This doc ument contains the product specification.

NXP Semiconductors PH3230S N-channel TrenchMOS intermediate level FET © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 November 2009 Document identifier: PH3230S_4 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 11. Contents