PH230

PH230 SJM | Alldatasheet

Document overview

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Technical content

Features

16.3 dB Gain at 2.3GHz +22.5 dBm P1dB +39 dBm Output IP3 Single Voltage Supply Lead-free / Green / RoHS- compliant SOT-89 Package

Applications

PCS, WCDMA, WiBro W-LAN / ISM RFID / Fixed Wireless Functional Diagram Function Pin No. RF IN 1 RF OUT / Bias 3 Ground 2,4 The PH230 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high quality SOT-89 package. The device features excellent Input and output return loss, highly linear performance. The device can be easily matched to obtain optimum power and linearity. The product is targeted for use as driver amplifier for wireless infrastructure applications. The PH230 operates from a single +5 voltage supply and have an internal active bias. All devices are 100% RF and DC tested

Description

Symbol Parameters Units Freq. Min. Typ. Max. S21 Gain dB

1900 MHz

2300 MHz

2600 MHz

17.2 16.3 14.7 S11 Input Return Loss dB -16 -15 -15 S22 Output Return Loss dB -12 -11 P1dB Output Power @1dB compression dBm 22.5 22.0 21.3 OIP3 Output Third Order intercept dBm 3.2 3.1 3.4 V / I Device voltage / current V/mA 5/82 Rth Thermal Resistance °C/W 58 Test Conditions : T=25°C, Supply Voltage=+5V, 50ohm System, OIP3 measured with two tones at an output power of +5dBm/tone separated by 1MHz.

High Linearity InGaP HBT Amplifier http://www.prewell.com April 2014 Frequency 1900 MHz S21 : Gain 17.4 dB S11 : Input Return Loss -18 dB S22 : Output Return Loss -13 dB Output P1dB +23 dBm Output IP3 @5dBm +39 dBm Noise Figure 3.2dB Supply Voltage 5 V Current 82 mA

1900 MHz Application Circuit

Gain vs. Frequency Gain(dB) Freqency(MHz) +25 o C -40 o C +85 o C 1800 1850 1900 1950 2000 -25 -20 -15 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1800 1850 1900 1950 2000 -25 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 1800 1850 1900 1950 2000 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 1800 1850 1900 1950 2000 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 1800 1850 1900 1950 2000 45 +5dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Freuquency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 OIP3 vs. Temperature Freq=1900MHz, +5dBm/tone OIP3(dBm) Temperature( o RF IN RF OUT15pF 82pF 100nH 82pF 1uF 3.0pF 1.5pF 50Ω/5mm

High Linearity InGaP HBT Amplifier http://www.prewell.com April 2014 Frequency 2300 MHz S21 : Gain 16.2 dB S11 : Input Return Loss -16 dB S22 : Output Return Loss -14 dB Output P1dB +22.4 dBm Output IP3 @5dBm +39 dBm Noise Figure 3.1dB Supply Voltage 5 V Current 82 mA

2300 MHz Application Circuit

Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2200 2250 2300 2350 2400 -25 -20 -15 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2200 2250 2300 2350 2400 -25 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2200 2250 2300 2350 2400 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 2200 2250 2300 2350 2400 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 2200 2250 2300 2350 2400 +5dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80 OIP3 vs. Temperature Freq=2300MHz, +5dBm/tone OIP3(dBm) Temperature( o RF IN RF OUT5.6pF 82pF 100nH 82pF 1uF 2.2pF 0.75pF 50Ω/5mm

High Linearity InGaP HBT Amplifier http://www.prewell.com April 2014 Frequency 2550 MHz S21 : Gain 15.6 dB S11 : Input Return Loss -22 dB S22 : Output Return Loss -9 dB Output P1dB +21.5 dBm Output IP3 @5dBm +39 dBm Noise Figure 3.4 dB Supply Voltage 5 V Current 82 mA 2500/2600 MHz Application Circuit 2500 2525 2550 2575 2600 Gain vs. Frequency Gain(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2500 2525 2550 2575 2600 -40 -30 -20 -10 Input Return Loss S11(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2500 2525 2550 2575 2600 -20 -15 -10 Output Return Loss S22(dB) Frequency(MHz) +25 o C -40 o C +85 o C 2500 2525 2550 2575 2600 Noise Figure vs. Frequency NF(dB) Frequency(MHz) +25 o C 2500 2525 2550 2575 2600 P1dB vs. Frequency P1dB(dBm) Frequency(MHz) +25 o C -40 o C +85 o C 2500 2525 2550 2575 2600 +5dBm/tone, +25 o C Output IP3 vs. Frequency OIP3(dBm) Frequency(MHz) +25 o C -40 o C +85 o C -40 -20 0 20 40 60 80

44 Freq=2550MHz, +5dBm/tone

OIP3 vs. Temperature OIP3(dBm) Temperature( o RF IN RF OUT0.75pF 20pF 22nH 82pF 1uF 1.5pF 0.75pF 50Ω/5mm 1.2pF

High Linearity InGaP HBT Amplifier http://www.prewell.com April 2014 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage +6 V Supply Current 150 mA RF Power Input 10 dBm Storage Temperature -55 to +125 °C Ambient Operating Temperature -40 to +85 °C Junction Temperature for >106 hours MTTF 187 °C Operation of this device above any of these parameters may cause permanent damage. Lead-free /RoHS Compliant / Green SOT-89 Package Outline Evaluation Board Layout (4x4) ESD / MSL Ratings 1. ESD sensitive device. Observe Handling Precautions. 2. ESD Rating : Class 1C(Passes at 1000V min.) Human Body Model (HBM), JESD22-A114 3. ESD Rating : Class IV (Passes at 1000V min.) Charged Device Model (CDM), JESD22-C101 4. MSL (Moisture Sensitive Level) Rating : Level 1 at +260°C Convection reflow, J-STD-020 Mounting Instructions 1. Use a large ground pad area with many plated through-holes as shown. 2. We recommend 1 oz copper minimum. 3. Measurement for our data sheet was made on 0.8mm thick FR-4 Board. 4. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 5. RF trace width depends on the board material and construction. 6. Add mounting screws near the part to fasten the board to a heatsink. Product Code Lot Number