PGH758AM NIEC | Alldatasheet

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Technical content

ç ç THYRISTOR MODULE Maximum Ratings Parameter Conditions Max Rated Value Unit Tc=101°C(Non-Bias) Average Rectified Output Current I O(AV)

3 Phase Full

Wave Rectified Tc=76°C(Biased) 75 A Operating JunctionTemperature Range Tjw Tj>125°C, Can not be Biased for Thyristor. -40 to +150 °C Storage Temperature Range Tstg -40 to +125 °C Isoration Voltage Viso Base Plate to Terminals, AC1min. 2000 V Case mounting Greased M5 Screw 2.4 to 2.8Mounting torque Terminals Ftor M5 Screw 2.4 to 2.8 N•m Thermal Characteristics Characteristics Symbol Test Conditions Maximum Value. Unit Thermal Resistance Rth(c-f) Case to Fin,Total,Greased 0.06 °C/W Maximum Ratings Grade Parameter Symbol PGH758AM Unit Repetitive Peak Reverse Voltage *1 VRRM 800 Non Repetitive Peak Reverse Voltage *1 VRSM 900 V Parameter Symbol Conditions Max Rated Value Unit Surge Forward Current *1 I FSM 50 Hz Half Sine Wave,1Pulse, Non-Repetitive 1000 A I Squared t *1 I 2t 2msec to 10msec 5000 A 2s Allowable Operating Frequancy f 400 Hz *1 Value Per 1 Arm

FEATURES

  • Isolated Base * 3 Phase Converter with Rush-Current Controllable Thyristor * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Converter For UPS , VVVF and Servo Motor Drive Amplifier PGH758AM PGH758AM PGH758AM PGH758AM OUTLINE DRAWING 75A / 800V Pert of Diode Bridge and Thyristor Part of Diode Bridge (6 dies) Nut Approx Net Weight:200g ç

ç ç Electrical • Thermal Characteristics Characteristics Symbol Test Conditions Maximum Value. Unit Peak Reverse Current *1 IRM VRM= V RRM, Tj= 125 °C 10 mA Peak Forward Voltage *1 VFM IFM= 75A, Tj=25 °C 1.20 V Thermal Resistance Rth(j-c) Junction to Case (Total) 0.24 °C/W * 1 V a l u e P e r 1 A r m Maximum Ratings Grade Parameter Symbol PGH758AM Unit Repetitive Peak Off-State Voltage VDRM 800 Non Repetitive Peak Off-State Voltage VDSM 900 V Repetitive Peak Reverse Voltage VRRM 800 Non Repetitive Peak Reverse Voltage VRSM 900 V Parameter Conditions Max Rated Value Unit Surge On-State Current I TSM 50 Hz Half Sine Wave,1Pulse Non-Repetitive 1000 A I Squared t I 2t 2msec to 10msec 5000 A 2s Critical Rate of Turned-On Current di/dt VD=2/3VDRM, I TM=2•IO, Tj=125 °C IG=200mA, diG/dt=0.2A/µs 100 A/µs Peak Gate Power P GM 5 W Average Gate Power P G(AV) 1 W Peak Gate Current I GM 2 A Peak Gate Voltage V GM 10 V Peak Gate Reverse Voltage V RGM 5 V Electrical • Thermal Characteristics Maximum Value.Characteristics Symbol Test Conditions Min. Typ. Max. Unit Peak Off-State Current IDM VDM= V DRM, Tj= 125 °C 15 mA Peak Reverse Current IRM VRM= V RRM, Tj= 125 °C 15 mA Peak On-State Voltage VTM ITM= 75A, Tj=25 °C 1.17 V Tj=-40°C 200 Tj=25°C 100Gate Current to Trigger I GT V D=6V,IT=1A Tj=125°C 50 mA Tj=-40°C 4 Tj=25°C 2.5Gate Voltage to Trigger V GT V D=6V,IT=1A Tj=125°C 2 V Gate Non-Trigger Voltage V GD VD=2/3VDRM Tj=125 °C 0.25 V Critical Rate of Rise of Off-State Voltage dv/dt VD=2/3VDRM Tj=125 °C 500 V/µs Turn-Off Time tq ITM=IO,VD=2/3VDRM dv/dt=20V/µs, V R=100V -di/dt=20A/µs, Tj=125°C 150 µs Turn-On Time tgt 6 µs Delay Time td 2 µs Rise Time tr VD=2/3VDRM Tj=125 °C IG=200mA, diG/dt=0.2A/µs 4 µs Latching Current I L Tj=25°C 100 mA Holding Current I H Tj=25°C 80 Thermal Resistance Rth(j-c) Junction to Case 0.6 °C/W Part of Thyristor (1 die)

ç ç PGH758AM OUTLINE DRAWING (Dimensions in mm) Nut ç