PGH2008AM NIEC | Alldatasheet

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Technical content

ç ç THYRISTOR MODULE Maximum Ratings Parameter Conditions Max Rated Value Unit Tc=93°C(Non-Bias) Average Rectified Output Current I O(AV)

3 Phase Full

Wave Rectified Tc=68°C(Biased) 200 A Operating JunctionTemperature Range Tjw Tj>125°C, Can not be Biased for Thyristor. -40 to +150 °C Storage Temperature Range Tstg -40 to +125 °C Isoration Voltage Viso Base Plate to Terminals, AC1min. 2000 V Case mounting Greased M6 Screw 2.5 to 3.5 M6 Screw 2.5 to 3.5Mounting torque Terminals Ftor M4 Screw 1.2 to 1.6 N•m Thermal Characteristics Characteristics Symbol Test Conditions Maximum Value. Unit Thermal Resistance Rth(c-f) Case to Fin,Total,Greased 0.06 °C/W Maximum Ratings Grade Parameter Symbol PGH2008AM Unit Repetitive Peak Reverse Voltage *1 VRRM 800 Non Repetitive Peak Reverse Voltage *1 VRSM 900 V Parameter Symbol Conditions Max Rated Value Unit Surge Forward Current *1 I FSM 50 Hz Half Sine Wave,1Pulse, Non-Repetitive 1800 A I Squared t *1 I 2t 2msec to 10msec 16200 A 2s Allowable Operating Frequancy f 400 Hz *1 Value Per 1 Arm

FEATURES

  • Isolated Base * 3 Phase Converter with Rush-Current Controllable Thyristor * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Converter For UPS , VVVF and Servo Motor Drive Amplifier PGH2008AM PGH2008AM PGH2008AM PGH2008AM OUTLINE DRAWING 200A / 800V Pert of Diode Bridge and Thyristor Part of Diode Bridge (6 dies) Approx Net Weight:530g ç ç

ç ç Electrical • Thermal Characteristics Characteristics Symbol Test Conditions Maximum Value. Unit Peak Reverse Current *1 IRM VRM= V RRM, Tj= 125 °C 20 mA Peak Forward Voltage *1 VFM IFM= 200A, Tj=25 °C 1.20 V Thermal Resistance Rth(j-c) Junction to Case (Total) 0.10 °C/W * 1 V a l u e P e r 1 A r m Maximum Ratings Grade Parameter Symbol PGH2008AM Unit Repetitive Peak Off-State Voltage VDRM 800 Non Repetitive Peak Off-State Voltage VDSM 900 V Repetitive Peak Reverse Voltage VRRM 800 Non Repetitive Peak Reverse Voltage VRSM 900 V Parameter Conditions Max Rated Value Unit Surge On-State Current I TSM 50 Hz Half Sine Wave,1Pulse Non-Repetitive 3200 A I Squared t I 2t 2msec to 10msec 51200 A 2s Critical Rate of Turned-On Current di/dt VD=2/3VDRM, I TM=2•IO, Tj=125 °C IG=300mA, diG/dt=0.2A/µs 100 A/µs Peak Gate Power P GM 5 W Average Gate Power P G(AV) 1 W Peak Gate Current I GM 2 A Peak Gate Voltage V GM 10 V Peak Gate Reverse Voltage V RGM 5 V Electrical • Thermal Characteristics Maximum Value.Characteristics Symbol Test Conditions Min. Typ. Max. Unit Peak Off-State Current IDM VDM= V DRM, Tj= 125 °C 30 mA Peak Reverse Current IRM VRM= V RRM, Tj= 125 °C 30 mA Peak On-State Voltage VTM ITM= 200A, Tj=25 °C 1.23 V Tj=-40°C 300 Tj=25°C 150Gate Current to Trigger I GT V D=6V,IT=1A Tj=125°C 80 mA Tj=-40°C 5.0 Tj=25°C 3.0Gate Voltage to Trigger V GT V D=6V,IT=1A Tj=125°C 2.0 V Gate Non-Trigger Voltage V GD VD=2/3VDRM Tj=125 °C 0.25 V Critical Rate of Rise of Off-State Voltage dv/dt VD=2/3VDRM Tj=125 °C 500 V/µs Turn-Off Time tq ITM=IO,VD=2/3VDRM dv/dt=20V/µs, V R=100V -di/dt=20A/µs, Tj=125°C 150 µs Turn-On Time tgt 6 µs Delay Time td 2 µs Rise Time tr VD=2/3VDRM Tj=125 °C IG=300mA, diG/dt=0.2A/µs 4 µs Latching Current I L Tj=25°C 150 mA Holding Current I H Tj=25°C 100 Thermal Resistance Rth(j-c) Junction to Case 0.25 °C/W Part of Thyristor (1 die)

ç ç PGH2008AM OUTLINE DRAWING (Dimensions in mm) ç