PFT2004N NIEC | Alldatasheet
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Technical content
ç ç THYRISTOR MODULE Maximum Ratings Approx Net Weight:370g Grade ParameterParameterParameterParameter Symbol PFT2004N Unit Repetitive Peak Off-State Voltage VDRM 400 Non Repetitive Peak Off-State Voltage VDSM 500 V Repetitive Peak Reverse Voltage VRRM 400 Non Repetitive Peak Reverse Voltage VRSM 500 V Parameter Parameter Parameter Parameter ConditionsConditionsConditionsConditions Max RatedMax RatedMax RatedMax Rated Value Value Value Value Unit Average Rectified Output Current I O(AV) 50Hz Half Sine Wave condition Tc=93°C 200 A RMS On-State Current I T(RMS) 314 A Surge On-State Current I TSM 50 Hz Half Sine Wave,1Pulse, Non-Repetitive 4400 A I Squared t I 2t 2msec to 10msec 96800 A 2s Peak Gate Power P GM 5 W Average Gate Power P G(AV) 1 W Peak Gate Current I GM 2 A Peak Gate Voltage V GM 10 V Peak Gate Reverse Voltage V RGM 5 V Operating JunctionTemperature Range Tjw -40 to +150 °C Storage Temperature Range Tstg -40 to +125 °C Case mounting Greased M6 Screw 2.5 to 3.5Mounting torque Terminals Ftor M8 Screw 9.0 to 10.0 N•m Value per 1 Arm
FEATURES
- 3 Phase Anode Common Half Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use PFT2004 NPFT2004 NPFT2004 NPFT2004 N OUTLINE DRAWING 200A / 400V ç φ φ ç
ç ç Electrical • Thermal Characteristics Maximum Value. Characteristics Symbol Test Conditions Min. Typ. Max. Unit Peak Off-State Current IDM VDM= V DRM, Tj= 150 °C 30 mA Peak Reverse Current IRM VRM= V RRM, Tj= 150 °C 30 mA Peak Forward Voltage VTM ITM= 600A, Tj=25 °C 1.3 V Tj=-40°C 200 Tj=25°C 100 Gate Current to Trigger I GT V D=6V,IT=1A Tj=125°C 50 mA Tj=-40°C 4 Tj=25°C 2.5 Gate Voltage to Trigger V GT V D=6V,IT=1A Tj=125°C 1.5 V Gate Non-Trigger Voltage V GD VD=2/3VDRM Tj=125 °C 0.2 V Latching Current I L Tj=25°C 100 mA Holding Current I H Tj=25°C 60 mA Thermal Resistance *1 Rth(j-c) Junction to Case 0.075 °C/W Value Per 1Arm *1:Value Per Module
ç ç PFT200xN OUTLINE DRAWING (Dimensions in mm) φ φ φ