PF8Z6V8 NJSEMI | Alldatasheet

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, Li ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 PF8Z6V8 PFZD6V8 >PF8Z180 -PFZD180 UNI - AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS OlODfS DEPHOTfCTION UNI - ETBIDIRECTIONNELLES TRANSIL TRANSIENT VOLTAGE SUPPRESSOR DIODES ESPECIALLY USEFUL IN PROTECTING INTEGRATED CIRCUITS, MOS, HYBRIDS AND OTHER VOLTAGE-SENSITIVE SEMICON- DUCTORS AND COMPONENTS - HIGH SURGE CAPABILITY : BOO W/1 mi expo. 9.6 kW/ fl-20 fts expo. - VERY FAST CLAMPING TIME : 1 ps for unidirectional types 6 ns for bidirectional types - LARGE VOLTAGE RANGE : E.6V — 140 V DIODES ECRETEUSES ADAPT&S A LA PROTECTION DES CIRCUITS INTEGRES, MOS. CIRCUITS HYBfllDeS. AUTRES SEMICONDUCTEURS ET COMPOSANTS SENSIBLES AUX SURTENSIONS. - GRANDE CAPACITEDE SURCHARGE: 800 Wl I ms expo. 9,6 kW/ 8-20 fis expo. - TEMPS D'ECRETAGE TRESRAPIDE: I ps pour types unldlrectionnels 6 ns pour types oldlnctionnals - GAMMEDE TENSION ETENDUE: 6.5V-* 140V Pp:MOW/1m.«xpo.

  • .akW/B-ZOpsnpo VRM:t,5V->-140V PFSZxrin — Unidirectional types PFZD »ri« — BldlnetloiMl typM BoftU : 00 27A plastic (CB-197J ''ABSOLUTE RATINGS (LIMITING VALUES) ^ VALEUaS UMITfS ABSOLVES O'UTIUSATION Peak pulse power for 1 ms exponential pulse Tj Initial = 25°C Puissance da crete pour unt onde exponent/alto de 1ms (cf note 1 ) Power dissipation on infinite hoauink Dissipation da puissance sur radlatiur fnfinl Tamb - /B u Non repetitive surge peak forward current for unidirectional types _ . , . , „„ Courant direct mn ripitiOf de surcharge accldenteUe ~J lnltla' " 2B c pour types unldirectionneh t - 1 u ms Storage and junction temperatures rempertturas dejonction at de stockega Maximum lead temperature for solderina during 10 s at 4 mm from case ^Tempiratuie maximum d» soudure des connexions pendent 10st4 mm du bottler
  • "p P IFSM Tst8 TL 800 200 176 -86-*+ 176 230 W W A y I Junction • connexions thermal resistance on Infinite heatshik (Ulaad = 10 mm) Resistance thermlque fonctibn ~ connexions sur radiateur Mini lLcannex. = 10mm) Rth (j-o) °C/W Note 1: For surges upper than the maximum values, the diode ... will present a short-circuit anode-cathode. Pour des surcharges superleures eux valeurs maximales, la diode presenters tin court-circuit anode-cathode. 10 (J5 Puba wav* form 10/1000 Forme d'ond, 10/1000 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Stand-off voltage . Tension da vtins :VRM Peak pulse current ., Courantde crate ' PP

ELECTRICAL CHARACTERISTICS

CAHACTfHISTIQUeS r-LECTRIQUSS Breakdown voltage Clamping voltage Tension d'avalanche :V10R) Tension d'ecretaga Temperature coefficient of V(BR} , Capacitance ~ Coefficient de temperature de V/Bfi) : a T CopocM : L Clamping time 10 Volt to VrgRj) tc|amping< 1 PS for unidirectional typos Temps de reponse 10 Volt a V(BR)I • tc|amping< B ns for bidireclional types Typa« Unidirectional PF8Z6V8 PF8Z8V2 PF8Z10 PF8Z12 PF8Z15 PF8Z18 PF8722 PF8Z27 PF8Z33 PF8Z39 PF8Z47 PF8Z56 PF8Z62 PF8Z68 PF8Z82 PF8Z100 PF8Z120 PF8Z160 PF8Z180 Bidirectional PFZD6V8 PFZD8V2 PFZD10 PFZD12 PFZDI5 PFZD18 PFZD22 PF2D27 PFZD33 PFZD39 PF2D47 PFZDB6 PFZD62 PFZD68 PFZD82 PFZD100 PFZD120 PFZD160 PFZ0180 'RM®VRM (||A> 1000 200 B B S B E IV> 5.5 6,6 9,5 14,5 17,5 21,6 25,5 37,6 61,6 120 140 V(BH)' ® IR mln. 6,12 7.38 9.0 10.8 13,5 16,2 19,8 24.3 29,7 35,1 42.3 55.8 61.2 73.8 108 135 162 nom. 6.8 8.2 100 120 150 180 max. 7,48 9,02 It 13.2 16,5 19,8 24,2 28,7 36,3 42.9 61,7 61,6 68,2 74.8 90.2 110 132 165 198 (mA) V(CL)»IPP max 1 ma expo (V) 10,5 14,5 21.5 26,6 31,5 38,6 88,5 117 143 172 215 267 (A) 66,6 31,5 25,5 14,5 8,3 6,8 6,6 4,6 3,7 3,1 V(CU®lpp max 8/20 /is axpo IV) 13,4 16,4 19.5 103 116 127 1S3 183 222 277 333 (A) 716 588 492 417 331 282 234 192 155 132 109 61,5 34.5 <*Tm«< (10-4/-C) 6,7 6,6 7,3 7,8 8,4 8,8 9,2 9,6 9,8 10,0 10.1 10.3 10,4 10,4 10,5 10,6 10,7 10,8 10,8 C'Myp VR = 0 V f - 1 MHz IpF) 10000 6400 4600 3400 2500 2000 1660 1240 1040 900 760 680 660 600 E40 600 460 420 400 * Pulse lest "* Divide these values by 2 for bidirectional types Mesure en Impulsion 'p*50 ms °< < ™ Diviserces valours par 2 pour les types bidlrectionneli For bidirectional types, electrical characteristics apply in both directions. Pour les types bidirect/onng/s, les caract6ristiques d/ectriques sont applicable^ dans les 2 sens. CASE DESCRIPTION DESCRIPTION DU BOITIER no«e J M note /f/ jf „' 0 b 0 D G L LI Millimetre! Mln. 26,0 Max. 1.28 5,10 9,80 1,26 Inche* Mln. 1.024 Max. 0.0504 0.2008 0.38S9 0.0492

  • The lead diameter 0 b is not controlled over zone LI. - Zone 4 f'inttirieur de toque/fa Fa 0 b n'ffst pas contrfif6. Cooling method : by convection (method Al Mode de refroidissament: par convection Imode A) Marking: type number; white band indicates cathode for unidirectional typu Marquaga: n° de type; tmeiu Utnc edit cathode pour les types unidlractionnels. Weight PnlH, ' ' 8 Folds