PESDXS2UT_SER NEXPERIA | Alldatasheet

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Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

Supersedes data of 2003 Aug 20

2004 Apr 15

Double ESD protection diodes in SOT23 package

2004 Apr 15 2

NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series

FEATURES

  • Uni-directional ESD protection of up to two lines
  • Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs
  • Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A
  • Ultra-low reverse leakage current: IRM < 700 nA
  • ESD protection > 23 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.

APPLICATIONS

  • Computers and peripherals
  • Communication systems
  • Audio and video equipment
  • High speed data lines
  • Parallel ports.

DESCRIPTION

Uni-directional double ESD protection diodes in a SOT23 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. MARKING Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. QUICK REFERENCE DATA PINNING TYPE NUMBER MARKING CODE(1) PESD3V3S2UT *U9 PESD5V2S2UT *U1 PESD12VS2UT *U2 PESD15VS2UT *U3 PESD24VS2UT *U4 SYMBOL PARAMETER VALUE UNIT VRWM reverse stand-off voltage 3.3, 5.2, 12, 15 and 24 V Cd diode capacitance VR = 0 V; f = 1 MHz 207, 152, 38, 32 and 23 pF number of protected lines PIN DESCRIPTION 1 cathode 1 2 cathode 2 3 common anode sym022 001aaa490 Fig.1 Simplified outline (SOT23) and symbol.

2004 Apr 15 3

NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series

ORDERING INFORMATION

In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Non-repetitive current pulse 8/20µ µs exponential decay waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PESD3V3S2UT − plastic surface mounted package; 3 leads SOT23 PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ppp peak pulse power 8/20 µs pulse; notes 1 and 2 PESD3V3S2UT − 330 W PESD5V2S2UT − 260 W PESD12VS2UT − 180 W PESD15VS2UT − 160 W PESD24VS2UT − 160 W Ipp peak pulse current 8/20 µs pulse; notes 1 and 2 PESD3V3S2UT − 18 A PESD5V2S2UT − 15 A PESD12VS2UT − 5 A PESD15VS2UT − 5 A PESD24VS2UT − 3 A Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C

2004 Apr 15 4

NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series ESD maximum ratings Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2. Measured across either pins 1 and 3 or pins 2 and 3. SYMBOL PARAMETER CONDITIONS VALUE UNIT ESD electrostatic discharge capability IEC 61000-4-2 (contact discharge); notes 1 and 2 PESD3V3S2UT 30 kV PESD5V2S2UT 30 kV PESD12VS2UT 30 kV PESD15VS2UT 30 kV PESD24VS2UT 23 kV HBM MIL-Std 883 PESDxS2UT series 10 kV ESD standards compliance ESD STANDARD CONDITIONS IEC 61000-4-2; level 4 (ESD); see Fig.3 >15 kV (air); > 8 kV (contact) HBM MIL-Std 883; class 3 >4 kV handbook, halfpage 01 0 e−t t (µs) Ipp (%) 120 MLE218 100 % Ipp; 8 µs 50 % Ipp; 20 µs Fig.2 8/20 µs pulse waveform according to IEC 61000-4-5. 001aaa191 Ipp 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 to 1 ns Fig.3 ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2.

2004 Apr 15 5

NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VRWM reverse stand-off voltage PESD3V3S2UT − − 3.3 V PESD5V2S2UT − − 5.2 V PESD12VS2UT − − 12 V PESD15VS2UT − − 15 V PESD24VS2UT − − 24 V IRM reverse leakage current PESD3V3S2UT VRWM = 3.3 V − 0.7 2 µA PESD5V2S2UT VRWM = 5.2 V − 0.15 1 µA PESD12VS2UT VRWM = 12 V − <0.02 1 µA PESD15VS2UT VRWM = 15 V − <0.02 1 µA PESD24VS2UT VRWM = 24 V − <0.02 1 µA VBR breakdown voltage IZ = 5 mA PESD3V3S2UT 5.2 5.6 6.0 V PESD5V2S2UT 6.4 6.8 7.2 V PESD12VS2UT 14.7 15.0 15.3 V PESD15VS2UT 17.6 18.0 18.4 V PESD24VS2UT 26.5 27.0 27.5 V Cd diode capacitance f = 1 MHz; VR = 0 V PESD3V3S2UT − 207 300 pF PESD5V2S2UT − 152 200 pF PESD12VS2UT − 38 75 pF PESD15VS2UT − 32 70 pF PESD24VS2UT − 23 50 pF V(CL)R clamping voltage notes 1 and 2 PESD3V3S2UT Ipp = 1 A − − 7 V Ipp = 18 A − − 20 V PESD5V2S2UT Ipp = 1 A − − 9 V Ipp = 15 A − − 20 V PESD12VS2UT Ipp = 1 A − − 19 V Ipp = 5 A − − 35 V PESD15VS2UT Ipp = 1 A − − 23 V Ipp = 5 A − − 40 V PESD24VS2UT Ipp = 1 A − − 36 V Ipp = 3 A − − 70 V

2004 Apr 15 6

NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series Notes 1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2. 2. Measured either across pins 1 and 3 or pins 2 and 3. Rdiff differential resistance PESD3V3S2UT IR = 1 mA − − 400 Ω PESD5V2S2UT IR = 1 mA − − 80 Ω PESD12VS2UT IR = 1 mA − − 200 Ω PESD15VS2UT IR = 1 mA − − 225 Ω PESD24VS2UT IR = 0.5 mA − − 300 Ω SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT GRAPHICAL DATA 001aaa147 103 102 104 Ppp (W) tp (µs) 11 0 410310 10 2 (1) (2) Fig.4 Peak pulse power dissipation as a function of pulse time; typical values. Tamb = 25 °C. tp = 8/20 µs exponential decay waveform; see Fig.2. (1) PESD3V3S2UT and PESD5V2S2UT. (2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT Tj (°C) 0 200 15050 100 001aaa193 0.4 0.8 1.2 PPP PPP(25°C) Fig.5 Relative variation of peak pulse power as a function of junction temperature; typical values.

2004 Apr 15 7

NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series VR (V) 05 4231 001aaa148 120 160 200 240 Cd (pF) (1) (2) Fig.6 Diode capacitance as a function of reverse voltage; typical values. Tamb = 25 °C; f = 1 MHz. (1) PESD3V3S2UT; V RWM = 3.3 V. (2) PESD5V2S2UT; V RWM = 5 V. VR (V) 02 5 2010 155 001aaa149 Cd (pF) (1) (3) (2) Fig.7 Diode capacitance as a function of reverse voltage; typical values. Tamb = 25 °C; f = 1 MHz. (1) PESD12VS2UT; V RWM = 12 V. (2) PESD15VS2UT; V RWM = 15 V. (3) PESD24VS2UT; V RWM = 24 V.

2004 Apr 15 8

NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series 001aaa270 10−1 Tj (°C) −100 150 10005 0−50 IR IR(25˚C) (1) Fig.8 Relative variation of reverse leakage current as a function of junction temperature; typical values. IR is less than 10 nA at 150 °C for: PESD12V52UT; VRWM = 12 V. PESD15VS2UT; VRWM = 15 V. PESD24VS2UT; VRWM = 24 V. (1) PESD3V3S2UT; V RWM = 3.3 V. PESD5V2S2UT; VRWM = 5 V.

2004 Apr 15 9

NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series 001aaa492 450 Ω 50 Ω Note 1: IEC61000-4-2 network CZ = 150 pF; RZ = 330 Ω D.U.T.: PESDxS2UT RG 223/U 50 Ω coaxRZ CZ ESD TESTER 4 GHz DIGITAL OSCILLOSCOPE10× ATTENUATOR vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 20 V/div horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div vertical scale = 10 V/div horizontal scale = 50 ns/div GND GND GND GND GND GND GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND unclamped −1 kV ESD voltage waveform (IEC61000-4-2 network) clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) note 1 PESD24VS2UT PESD15VS2UT PESD12VS2UT PESD5V2S2UT PESD3V3S2UT Fig.9 ESD clamping test set-up and waveforms.

2004 Apr 15 10

NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series

APPLICATION INFORMATION

The PESDxS2UT series is designed for uni-directional protection for up to two lines against damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UT series may be used on lines where the signal polarities are below ground. PESDxS2UT series provide a surge capability of up to 330 W (Ppp) per line for an 8/20 µs waveform. Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended:

  • Place the PESDxS2UT as close as possible to the input terminal or connector.
  • The path length between the PESDxS2UT and the protected line should be minimized.
  • Keep parallel signal paths to a minimum.
  • Avoid running protected conductors in parallel with unprotected conductors.
  • Minimize all printed-circuit board conductive loops including power and ground loops.
  • Minimize the length of transient return paths to ground.
  • Avoid using shared return paths to a common ground point.
  • Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias. 001aaa491 PESDxS2UT line 1 to be protected unidirectional protection of two lines bidirectional protection of one line line 2 to be protected ground PESDxS2UT line 1 to be protected ground Fig.10 Typical application: ESD protection of data lines.

2004 Apr 15 11

NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series PACKAGE OUTLINE UNIT A1 max. bp cD E e1 HE Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 IEC JEDEC JEITA mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 TO-236AB bp D e A Lp Q detail X HE E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface-mounted package; 3 leads SOT2 3

2004 Apr 15 12

NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Printed in The Netherlands R76/03/pp13 Date of release: 2004 Apr 15 Document order number: 9397 750 12823