PDTD1XXXU_SER NEXPERIA | Alldatasheet
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Technical content
- Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
1.2 Features
1.3 Applications
500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 13 May 2014 Product data sheet Table 1. Product overview
applications
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
1.4 Quick reference data
Table 2. Quick reference data Table 3. Pinning
2 GND (emitter)
Table 4. Ordering information
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Table 5. Marking codes Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. (2) FR4 PCB, single-sided copper, standard footprint. Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Table 7. Thermal characteristics
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 5 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors FR4 PCB, single-sided copper, tin-plated and standard footprint Fig 2. Transient thermal impedance from junction to ambi ent as a function of pulse duration for SOT323/SC-70; typical values FR4 PCB, 4-layer copper, tin-plated and standard footprint. Fig 3. Transient thermal impedance from junction to ambi ent as a function of pulse duration for SOT323/SC-70; typical values aaa-012062 102 103 Zth(j-a) (K/W) 10-1 10-5 1010-210-4 10210-1 tp (s) 10-3 1031 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 aaa-012063 10-5 1010-210-4 10210-1 tp (s) 10-3 1031 102 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Table 8. Characteristics Tamb = 25 C unless otherwise specified.
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. [1] Characteristics of built-in transistor. Table 8. Characteristics …continued Tamb = 25 C unless otherwise specified.
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 8 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors VCE = 5 V (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C IC/IB = 20 (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C Fig 4. PDTD113EU: DC current gain as a function of collector cu rrent; typical values Fig 5. PDTD113EU: Collec tor-emitter saturation voltage a s a function of collector current; typical values VCE = 0.3 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C VCE = 5 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C Fig 6. PDTD113EU: On-state input voltage as a function of collector current; typical values Fig 7. PDTD113EU: Off-state input voltage as a function of collector current; typical values 006aaa310 102 103 hFE 10−1 IC (mA) 10−1 10310211 0 (1) (2) (3) 006aaa311 IC (mA) 10 10 3102 10−1 VCEsat (V) 10−2 (1) (2) (3) 006aaa312 IC (mA) 10−1 10310211 0 VI(on) (V) 10−1 (1) (2) (3) IC (mA) 10−1 101 006aaa313 VI(off) (V) 10−1 (1) (2) (3)
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 9 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 8. PDTD113EU: Collector current as a function of collector-emitter voltage; typical values Fig 9. PDTD113EU: Collector capacitance as a function of collector-base voltage; typical values VCE = 5 V; Tamb = 25 C Fig 10. PDTD113EU: Transition frequency as a function of collector current; typical values of built-in transistor VCE (V) 05 4231 aaa-012430 0.2 0.3 0.1 0.4 0.5 IC (A) IB = 0.85 mA 1.15 1.3 1.45 1.6 1.9 2.2 1.75 2.05 VCB (V) 05 0 4020 3010 aaa-012431 C c (pF) aaa-012066 102 103 fT (MHz) IC (mA) 10-1 10310211 0
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 10 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors VCE = 5 V (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C IC/IB = 20 (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C Fig 11. PDTD113ZU: DC current gain as a function of collector cu rrent; typical values Fig 12. PDTD113ZU: Collector-emitter saturation voltage a s a function of collector current; typical values VCE = 0.3 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C VCE = 5 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C Fig 13. PDTD113ZU: On-sta te input voltage as a function of collector current; typical values Fig 14. PDTD113ZU: Off-state input voltage as a function of collector current; typical values 006aaa314 102 103 hFE IC (mA) 10−1 10310211 0 (1) (2) (3) 006aaa315 IC (mA) 11 0 310210 10−1 VCEsat (V) 10−2 (1) (2) (3) 006aaa316 IC (mA) 10−1 10310211 0 VI(on) (V) 10−1 (1) (2) (3) 006aaa317 IC (mA) 10−1 101 VI(off) (V) 10−1 (1) (2) (3)
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 11 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 15. PDTD113ZU: Collector current as a function of collector-emitter voltage; typical values Fig 16. PDTD113ZU: Collector capacitance as a function of collector-base voltage; typical values VCE = 5 V; Tamb = 25 C Fig 17. PDTD113ZU: Transition frequency as a function of collector current; typical values of built-in transistor VCE (V) 05 4231 aaa-012432 0.2 0.3 0.1 0.4 0.5 IC (A) 0 IB = 0.17 mA 0.34 0.51 0.68 0.85 1.02 1.36 1.7 1.19 1.53 VCB (V) 05 0 4020 3010 aaa-012437 C c (pF) aaa-012066 102 103 fT (MHz) IC (mA) 10-1 10310211 0
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 12 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors VCE = 5 V (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C IC/IB = 20 (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C Fig 18. PDTD123EU: DC current gain as a function of collector cu rrent; typical values Fig 19. PDTD123EU: Collector-emitter saturation voltage a s a function of collector current; typical values VCE = 0.3 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C VCE = 5 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C Fig 20. PDTD123EU: On-state input voltage as a function of collector current; typical values Fig 21. PDTD123EU: Off-sta te input voltage as a function of collector current; typical values 006aaa318 102 103 hFE 10−1 IC (mA) 10−1 10310211 0 (1) (2) (3) aaa-012447 IC (mA) 11 0 310210 10-1 VCEsat (V) 10-2 (1) (2) (3) 006aaa320 IC (mA) 10−1 10310211 0 VI(on) (V) 10−1 (1) (2) (3) IC (mA) 10−1 101 006aaa321 VI(off) (V) 10−1 (1) (2) (3)
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 13 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 22. PDTD123EU: Collector current as a function of collector-emitter voltage; typical values Fig 23. PDTD123EU: Collector capacitance as a function of collector-base voltage; typical values VCE = 5 V; Tamb = 25 C Fig 24. PDTD123EU: Transition frequency as a function of collector current; typical values of built-in transistor VCE (V) 05 4231 aaa-012433 0.2 0.3 0.1 0.4 0.5 IC (A) IB = 0.55 mA 0.7 0.85 1.15 1.3 1.6 1.9 1.45 1.75 VCB (V) 05 0 4020 3010 aaa-012438 C c (pF) aaa-012066 102 103 fT (MHz) IC (mA) 10-1 10310211 0
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 14 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors VCE = 5 V (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C IC/IB = 20 (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C Fig 25. PDTD123YU: DC current gain as a function of collector cu rrent; typical values Fig 26. PDTD123YU: Collector-emitter saturation voltage a s a function of collector current; typical values VCE = 0.3 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C VCE = 5 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C Fig 27. PDTD123YU: On-state input voltage as a function of collector current; typical values Fig 28. PDTD123YU: Off-sta te input voltage as a function of collector current; typical values 006aaa322 102 103 hFE IC (mA) 10−1 10310211 0 (1) (2) (3) aaa-012448 IC (mA) 11 0 310210 10-1 VCEsat (V) 10-2 (1) (2) (3) 006aaa324 IC (mA) 10−1 10310211 0 VI(on) (V) 10−1 (1) (2) (3) IC (mA) 10−1 101 VI(off) (V) 10−1 006aaa325 (1) (2) (3)
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 15 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 29. PDTD123YU: Collector current as a function of collector-emitter voltage; typical values Fig 30. PDTD123YU: Collector capacitance as a function of collector-base voltage; typical values VCE = 5 V; Tamb = 25 C Fig 31. PDTD123YU: Transition frequency as a function of collector current; typical values of built-in transistor VCE (V) 05 4231 aaa-012434 0.2 0.3 0.1 0.4 0.5 IC (A) IB = 0.15 mA 0.3 0.45 0.6 0.75 0.9 1.2 1.05 1.35 1.5 VCB (V) 05 0 4020 3010 aaa-012439 C c (pF) aaa-012066 102 103 fT (MHz) IC (mA) 10-1 10310211 0
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 16 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors VCE = 5 V (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C IC/IB = 20 (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C Fig 32. PDTD143EU: DC current gain as a function of collector cu rrent; typical values Fig 33. PDTD143EU: Collector-emitter saturation voltage a s a function of collector current; typical values VCE = 0.3 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C VCE = 5 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C Fig 34. PDTD143EU: On-state input voltage as a function of collector current; typical values Fig 35. PDTD143EU: Off-sta te input voltage as a function of collector current; typical values aaa-012442 102 103 hFE IC (mA) 10-1 10310211 0 (1) (2) (3) aaa-012444 IC (mA) 11 0 310210 10-1 VCEsat (V) 10-2 (1) (2) (3) aaa-012449 102 VI(on) (V) 10-1 IC (mA) 10-1 10310211 0 (1) (2) (3) IC (mA) 10-1 101 aaa-012573 VI(off) (V) 10-1 (1) (2) (3)
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 17 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 36. PDTD143EU: Collector current as a function of collector-emitter voltage; typical values Fig 37. PDTD143EU: Collector capacitance as a function of collector-base voltage; typical values VCE = 5 V; Tamb = 25 C Fig 38. PDTD143EU: Transition frequency as a function of collector current; typical values of built-in transistor VCE (V) 05 4231 aaa-012435 0.2 0.3 0.1 0.4 0.5 IC (A) IB = 0.35 mA 1.55 0.5 1.1 0.95 0.8 1.4 1.7 0.65 1.25 VCB (V) 05 0 4020 3010 aaa-012440 C c (pF) aaa-012066 102 103 fT (MHz) IC (mA) 10-1 10310211 0
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 18 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors VCE = 5 V (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C IC/IB = 20 (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C Fig 39. PDTD143XU: DC current gain as a function of collector cu rrent; typical values Fig 40. PDTD143XU: Collector-emitter saturation voltage a s a function of collector current; typical values VCE = 0.3 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C VCE = 5 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C Fig 41. PDTD143XU: On-state input voltage as a function of collector current; typical values Fig 42. PDTD143XU: Off-sta te input voltage as a function of collector current; typical values aaa-012441 102 103 hFE IC (mA) 10-1 10310211 0 (1) (2) (3) aaa-012445 IC (mA) 11 0 310210 10-1 VCEsat (V) 10-2 (1) (2) (3) aaa-012450 102 VI(on) (V) 10-1 IC (mA) 10-1 10310211 0 (1) (2) (3) IC (mA) 10-1 101 aaa-012574 VI(off) (V) 10-1 (1) (2) (3)
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 19 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 43. PDTD143XU: Collector current as a function of collector-emitter voltage; typical values Fig 44. PDTD143XU: Collector capacitance as a function of collector-base voltage; typical values VCE = 5 V; Tamb = 25 C Fig 45. PDTD143XU: Transition frequency as a function of collector current; typical values of built-in transistor VCE (V) 05 4231 aaa-012071 0.2 0.3 0.1 0.4 0.5 IC (A) IB = 0.25 mA 0.4 0.55 0.7 0.85 1.0 1.15 1.3 1.45 1.6 VCB (V) 05 0 4020 3010 aaa-012072 C c (pF) aaa-012066 102 103 fT (MHz) IC (mA) 10-1 10310211 0
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 20 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors VCE = 5 V (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C IC/IB = 20 (1) T amb = 100 C (2) T amb = 25 C (3) T amb = 40 C Fig 46. PDTD114EU: DC current gain as a function of collector cu rrent; typical values Fig 47. PDTD114EU: Collec tor-emitter saturation voltage a s a function of collector current; typical values VCE = 0.3 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C VCE = 5 V (1) T amb = 40 C (2) T amb = 25 C (3) T amb = 100 C Fig 48. PDTD114EU: On-state input voltage as a function of collector current; typical values Fig 49. PDTD114EU: Off-state input voltage as a function of collector current; typical values aaa-012443 102 103 hFE IC (mA) 10-1 10310211 0 (1) (2) (3) aaa-012446 IC (mA) 11 0 310210 10-1 VCEsat (V) 10-2 (1) (2) (3) aaa-012451 102 VI(on) (V) 10-1 IC (mA) 10-1 10310211 0 (1) (2) (3) IC (mA) 10-1 101 aaa-012575 VI(off) (V) 10-1 (1) (2) (3)
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 21 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors Tamb = 25 C f = 1 MHz; Tamb = 25 C Fig 50. PDTD114EU: Collector current as a function of collector-emitter voltage; typical values Fig 51. PDTD114EU: Collector capacitance as a function of collector-base voltage; typical values VCE = 5 V; Tamb = 25 C Fig 52. PDTD114EU: Transition frequency as a function of collector current; typical values of built-in transistor VCE (V) 05 4231 aaa-012073 0.2 0.3 0.1 0.4 0.5 IC (A) IB = 0.35 mA 0.5 0.65 0.8 0.95 1.1 1.25 1.4 1.55 1.7 VCB (V) 05 0 4020 3010 aaa-012074 C c (pF) aaa-012066 102 103 fT (MHz) IC (mA) 10-1 10310211 0
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 22 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors 8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline Fig 53. Package outline PDTD1xxxU series (SOT323/SC-70) 04-11-04Dimensions in mm 0.45 0.15 1.1 0.8 2.2 1.8 2.2 2.0 1.35 1.15 1.3 0.4 0.3 0.25 0.10
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 23 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors 10. Soldering Dimensions in mm Fig 54. Reflow soldering footprint PDTD1xxxU series (SOT323/SC-70) Dimensions in mm Fig 55. Wave soldering footprint PDTD1xxxU series (SOT323/SC-70) solder lands solder resist occupied area solder paste sot323_fr 2.65 2.35 0.6 (3×) 0.5 (3×) 0.55 (3×) 1.325 1.85 1.33 Dimensions in mm sot323_fw 3.65 2.1 1.425 (3×) 4.6 (2×) 2.575 1.8 solder lands solder resist occupied area preferred transport direction during soldering Dimensions in mm
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Table 9. Revision history
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 25 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors 12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple de vices. The latest product status information is available on the Internet at URL http://www.nex peria.com.
12.2 Definitions
Draft — The document is a draft version only. The cont ent is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any rep resentations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales of fice. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and custome r have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is dee med to offer functions and qualities beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliabl e. However, Nexperia does not give any rep resentations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no respo nsibility for the content in this document if provided by an information source outside of Nexperia. In no event shall Nexperia be liable for any indirect, incidental, pun itive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards custome r for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Ri ght to make changes — Nexperia reserves the right to make chang es to inf ormation published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive appl ications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or appl ications and therefore such inclusion and/or use is at the customer's own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no repr esentation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia acce pts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and prod ucts planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damag e, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and th e products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Li miting values — Stress above one or more limiting values (as defined in the Absolute Maximum Rati ngs System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and c onditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for p roduct development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specif ication. Product [short] data sheet Production This document contains the product specification.
© Nexperia B.V. 2017. All rights reserved PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 1 — 13 May 2014 26 of 27 Nexperia PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors No offer to sell or license — Nothing in this document may be interpreted or construed as an off er to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiti ng values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com
500 mA, 50 V NPN resistor-equipped transistors 14. Contents © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: