PDTD113ZQA_SER NEXPERIA | Alldatasheet
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Technical content
Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia
- Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PDTD113Z/123Y/143XQA series
50 V, 500 mA NPN resistor-equipped transistors
Rev. 1 — 31 March 2016 Product data sheet DFN1010D-3 Table 1. Product overview
applications
Switching loads Table 2. Quick reference data
Table 3. Pinning
1 I input (base)
2 GND GND (emitter)
3 O output (collector)
4 O output (collector)
Table 4. Ordering information
4.1 Binary marking code description
Table 5. Marking codes Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
[2] Device mounted on an FR4 PCB, single-sided copper , tin-plated; mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated; mounting pad for collector 1 cm2. Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated; mounting pad for collector 1 cm 2. Table 7. Thermal characteristics FR4 PCB, single-sided copper, tin-plated and standard footprint.
Product data sheet Rev. 1 — 31 March 2016 6 of 21 NXP Semiconductors PDTD113Z/123Y/143XQA FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Fig 4. Transient thermal impedance from junction to am bient as a function of pulse duration; typical values FR4 PCB, 4-layer copper, tin-plated and standard footprint. Fig 5. Transient thermal impedance from junction to am bient as a function of pulse duration; typical values aaa-020054 tp (s) 10-5 10310-4 10-3 10-2 10-1 1 10 102 103 102 Zth(j-a) (K/W) 0.75 duty cycle = 1 0.5 0.2 0.05 0.01 0.33 0.1 0.02 aaa-020058 tp (s) 10-5 10310-4 10-3 10-2 10-1 1 10 102 103 102 Zth(j-a) (K/W) 0.75 duty cycle = 1 0.5 0.2 0.05 0.01 0.33 0.1 0.02
Product data sheet Rev. 1 — 31 March 2016 7 of 21 NXP Semiconductors PDTD113Z/123Y/143XQA FR4 PCB, 4-layer copper, tin-plated; mounting pad for collector 1 cm2 Fig 6. Transient thermal impedance from junction to am bient as a function of pulse duration; typical values aaa-020057 tp (s) 10-5 10310-4 10-3 10-2 10-1 1 10 102 103 102 Zth(j-a) (K/W) 0.75 duty cycle = 1 0.5 0.2 0.05 0.01 0.33 0.1 0.02
[1] See section test information for re sistor calculation and test conditions. [2] Characteristics of built-in transistor. Table 8. Characteristics Tamb =2 5 C unless otherwise specified.
Product data sheet Rev. 1 — 31 March 2016 9 of 21 NXP Semiconductors PDTD113Z/123Y/143XQA VCE =5V (1) T amb = 100 C (2) T amb =2 5 C (3) T amb = 40 C Tamb =2 5 C Fig 7. PDTD113ZQA: DC current gain as a function of collector current; typical values Fig 8. PDTD113ZQA: Collecto r current as a function of collector-emitter voltage; typical values VCE =0 . 3V (1) T amb = 40 C (2) T amb =2 5 C (3) T amb = 100 C VCE =5V (1) T amb = 40 C (2) T amb =2 5 C (3) T amb = 100 C Fig 9. PDTD113ZQA: On-state input voltage as a function of collector current; typical values Fig 10. PDTD113ZQA: Off-sta te input voltage as a function of collector current; typical values aaa-020059 102 103 hFE IC (mA) 10-1 10310211 0 (1) (2) (3) VCE (V) 05 4231 aaa-020107 0.2 0.3 0.1 0.4 0.5 IC (A) IB (mA) = 2.05 1.65 1.25 0.85 0.45 0.25 0.65 1.05 1.45 1.85 aaa-02010910 VI(on) (V) 10-1 IC (mA) 10-1 10310211 0 (1) (2) (3) aaa-020112 IC (mA) 10-1 101 VI(off) (V) 10-1 (1) (2) (3)
Product data sheet Rev. 1 — 31 March 2016 10 of 21 NXP Semiconductors PDTD113Z/123Y/143XQA IC/IB =2 0 (1) T amb = 100 C (2) T amb =2 5 C (3) T amb = 40 C f=1 M H z ; Tamb =2 5 C Fig 11. PDTD113ZQA: Coll ector-emitter saturation voltage as a function of collector current; typical values Fig 12. PDTD113ZQA: Collector capacitance as a function of collector-base voltage; typical values aaa-02010810-1 VCEsat (V) 10-2 IC (mA) 11 0 310210 (1) (2) (3) VCB (V) 05 0 4020 3010 aaa-02011416 Cc (pF)
Product data sheet Rev. 1 — 31 March 2016 11 of 21 NXP Semiconductors PDTD113Z/123Y/143XQA VCE =5V (1) T amb = 100 C (2) T amb =2 5 C (3) T amb = 40 C Tamb =2 5 C Fig 13. PDTD123YQA: DC current gain as a function of collector current; typical values Fig 14. PDTD123YQA: Collector current as a function of collector-emitter voltage; typical values VCE =0 . 3V (1) T amb = 40 C (2) T amb =2 5 C (3) T amb = 100 C VCE =5V (1) T amb = 40 C (2) T amb =2 5 C (3) T amb = 100 C Fig 15. PDTD123YQA: On-state input voltage as a function of collector current; typical values Fig 16. PDTD123YQA: Off-state input voltage as a function of collector current; typical values IC (mA) 10-1 10310 10 21 aaa-020115 102 103 hFE (1) (2) (3) VCE (V) 05 4231 aaa-020116 0.2 0.3 0.1 0.4 0.5 IC (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IB (mA) = 2 aaa-020119 IC (mA) 10-1 10310 10 21 VI(on) (V) 10-1 (1) (2) (3) aaa-020117 IC (mA) 10-1 101 VI(off) (V) 10-1 (1) (2) (3)
Product data sheet Rev. 1 — 31 March 2016 12 of 21 NXP Semiconductors PDTD113Z/123Y/143XQA IC/IB =2 0 (1) T amb = 100 C (2) T amb =2 5 C (3) T amb = 40 C f=1 M H z ; Tamb =2 5 C Fig 17. PDTD123YQA: Collector-emitter saturation voltage as a function of collector current; typical values Fig 18. PDTD123YQA: Collector capacitance as a function of collector-base voltage; typical values aaa-02011810-1 VCEsat (V) 10-2 IC (mA) 11 0 310210 (1) (2) (3) VCB (V) 05 0 4020 3010 aaa-02012016 Cc (pF)
Product data sheet Rev. 1 — 31 March 2016 13 of 21 NXP Semiconductors PDTD113Z/123Y/143XQA VCE =5V (1) T amb = 100 C (2) T amb =2 5 C (3) T amb = 40 C Tamb =2 5 C Fig 19. PDTD143XQA: DC current gain as a function of collector current; typical values Fig 20. PDTD143XQA: Collector current as a function of collector-emitter voltage; typical values VCE =0 . 3V (1) T amb = 40 C (2) T amb =2 5 C (3) T amb = 100 C VCE =5V (1) T amb = 40 C (2) T amb =2 5 C (3) T amb = 100 C Fig 21. PDTD143XQA: On-state input voltage as a function of collector current; typical values Fig 22. PDTD143XQA: Off-state input voltage as a function of collector current; typical values IC (mA) 10-1 10310 10 21 aaa-020121 102 103 hFE (1) (2) (3) VCE (V) 05 4231 aaa-020122 0.2 0.3 0.1 0.4 0.5 IC (A) 1.85 1.65 1.45 1.25 1.05 0.85 0.65 0.45 0.25 IB (mA) = 2.05 IC (mA) 10-1 10310 10 21 aaa-020125 102 VI(on) (V) 10-1 (1) (2) (3) IC (mA) 10-1 101 aaa-020123 VI(off) (V) 10-1 (1) (2) (3)
Product data sheet Rev. 1 — 31 March 2016 14 of 21 NXP Semiconductors PDTD113Z/123Y/143XQA IC/IB =2 0 (1) T amb = 100 C (2) T amb =2 5 C (3) T amb = 40 C f=1 M H z ; Tamb =2 5 C Fig 23. PDTD143XQA: Collector-emitter saturation voltage as a function of collector current; typical values Fig 24. PDTD143XQA: Collector capacitance as a function of collector-base voltage; typical values aaa-02012410-1 VCEsat (V) 10-2 IC (mA) 11 0 310210 (1) (2) (3) VCB (V) 05 0 4020 3010 aaa-02012616 Cc (pF) VCE = 5 V; f = 100 MHz; Tamb =2 5° C Fig 25. Transition frequency as a function of coll ector current; typical values of built-in transistor aaa-020127 IC (mA) 10-1 10310 10 21 102 103 fT (MHz)
8.1 Quality information
suitable for use in automotive applications.
8.2 Resistor calculation
- Calculation of bias resistor 1 (R1):
- Calculation of bias resistor ratio (R2/R1):
8.3 Resistor test conditions
Table 9. Resistor test conditions
Product data sheet Rev. 1 — 31 March 2016 16 of 21 NXP Semiconductors PDTD113Z/123Y/143XQA
- Package outline Fig 27. Package outline DFN1010D-3 (SOT1215) 13-03-05Dimensions in mm 0.22 0.30 0.75 0.34 0.40 0.04 max 0.95 1.05 0.1 0.17 0.25 0.16 0.24 0.195 0.275 0.245 0.325 1.05 1.15 0.87 0.95
Product data sheet Rev. 1 — 31 March 2016 17 of 21 NXP Semiconductors PDTD113Z/123Y/143XQA
- Soldering Fig 28. Reflow soldering footprint DFN1010D-3 (SOT1215) SOT1215Footprint information for reflow soldering of DFN1010D-3 package sot1215_fr solder land solder resist solder land plus solder paste occupied area Dimensions in mm Issue date 12-11-23 13-03-06 0.3 0.75 1.1 0.4 0.35 (2x) 0.45 (2x) 0.3 1.2 0.25 (2x) 0.5 0.4 0.5 1.4 1.5 0.3 0.3 0.4 0.5 1.3 0.4 0.4 0.5 1.3
Table 10. Revision history
Product data sheet Rev. 1 — 31 March 2016 19 of 21 NXP Semiconductors PDTD113Z/123Y/143XQA
- Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
Product data sheet Rev. 1 — 31 March 2016 20 of 21 NXP Semiconductors PDTD113Z/123Y/143XQA No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PDTD113Z/123Y/143XQA © NXP Semiconductors N.V. 2016. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 31 March 2016 Document identifier: PDTD113Z_123Y_143XQA_SER Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents