PDT20116 NIEC | Alldatasheet
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ç ç THYRISTOR MODULE Maximum Ratings Approx Net Weight:280g Grade ParameterParameterParameterParameter Symbol PDT/PDH20116 Unit Repetitive Peak Off-State Voltage VDRM 1600 Non Repetitive Peak Off-State Voltage VDSM 1700 V Repetitive Peak Reverse Voltage VRRM 1600 Non Repetitive Peak Reverse Voltage VRSM 1700 V arameter arameter arameter arameter ConditionsConditionsConditionsConditions Max RatedMax RatedMax RatedMax Rated Value Value Value Value Unit Average Rectified Output Current I O(AV) 50Hz Half Sine Wave condition Tc=71°C 200 A RMS On-State Current I T(RMS) 314 A Surge Forward Current I FSM 50 Hz Half Sine Wave,1cycle Non-Repetitive 4000 A I Squared t I 2t 2msec to 10msec 80000 A 2s Critical Rate of Turned-On Current di/dt VD=2/3VDRM, I TM=2•IO, Tj=125 °C IG=300mA, diG/dt=0.2A/µs 100 A/µs Peak Gate Power P GM 5 W Average Gate Power P G(AV) 1 W Peak Gate Current I GM 2 A Peak Gate Voltage V GM 10 V Peak Gate Reverse Voltage V RGM 5 V Operating JunctionTemperature Range Tjw -40 to +125 °C Storage Temperature Range Tstg -40 to +125 °C Isoration Voltage Viso Base Plate to Terminals, AC1min 2500 V Case mounting M6 Screw 2.5 to 3.5 Mounting torque Terminals Ftor M6 Screw 2.5 to 3.5 N•m Value per 1 Arm
FEATURES
- 108mm Short Size Case * Isolated Base * Dual Thyristors or Thyristor and Diode Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * AC phase control PDT20116 PDH20116PDT20116 PDH20116PDT20116 PDH20116PDT20116 PDH20116 OUTLINE DRAWING 200A / 1600V ç PDT PDH
ç ç Electrical • Thermal Characteristics Maximum Value. Characteristics Symbol Test Conditions Min. Typ. Max. Unit Peak Off-State Current IDM VDM= V DRM, Tj=125°C 80 mA ç Peak Reverse Current IRM VRM= V RRM, Tj= 125 °C 80 mA Peak On-State Voltage VTM ITM= 600A, Tj=25 °C 1.4 V Tj=-40°C 300 Tj=25°C 150 Gate Current to Trigger I GT V D=6V,IT=1A Tj=125°C 80 mA Tj=-40°C 5 Tj=25°C 3 Gate Voltage to Trigger V GT V D=6V,IT=1A Tj=125°C 2 V Gate Non-Trigger Voltage V GD VD=2/3VDRM Tj=125 °C 0.25 V Critical Rate of Rise of Off-State Voltage dv/dt VD=2/3VDRM Tj=125 °C 500 V/µs Turn-Off Time tq ITM=IO,VD=2/3VDRM dv/dt=20V/µs, V R=100V -di/dt=20A/µs, Tj=125°C 100 µs Turn-On Time tgt 6 µs Delay Time td 2 µs Rise Time tr Tj=25°C, ITM=IT(RMS) VD=2/3VDRM, I G=300mA diG/dt=0.2A/µs 4 µs Latching Current I L Tj=25°C 100 mA Holding Current I H Tj=25°C 60 Rth(j-c) Junction to Case 0.2 Thermal Resistance Rth(c-f) Base Plate to Heat Sink with Thermal Compound 0.1 °C/W Value Per 1Arm
ç ç PDT/PDH20116 OUTLINE DRAWING (Dimensions in mm) ç
ON-STATE CURRENT VS. VOLTAGE PDT/PDH20116 0 1 2 3 4 INSTANTANEOUS ON-STATE VOLTAGE (V) 100 200 500 1000 2000 5000 INSTANTANEOUS ON-STATE CURRENT (A) Tj=25°C Tj=125°C ON-STATE CURRENT VS. VOLTAGE PDT/PDH20116 0 1 2 3 4 INSTANTANEOUS ON-STATE VOLTAGE (V) 100 200 500 1000 2000 5000 INSTANTANEOUS ON-STATE CURRENT (A) Tj=25°C Tj=125°C
AVERAGE ON-STATE POWER DISSIPATION for 0 50 100 150 200 250 300 350 AVERAGE ON-STATE CURRENT (A) 100 150 200 250 300 350 400 AVERAGE ON-STATE POWER DISSIPATION (W) PDT/PDH20116 0.02s I TSM =180°q 120° 90° 60° 30° D.C. =180°q 120° 90° 60° 30° AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE PDT/PDH20116 (50Hz SINUSOIDAL CURRENT WAVEFORM) 0 25 50 75 100 125 CASE TEMPERATURE (°C) 120 160 200 AVERAGE ON-STATE CURRENT (A) 0° 180° q CONDUCTION ANGLE =180°q 120° 90° 60° 30°
AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE PDT/PDH20116 (50Hz RECTANGULAR CURRENT WAVEFORM) 0 25 50 75 100 125 CASE TEMPERATURE (°C) 100 150 200 250 300 350 AVERAGE ON-STATE CURRENT (A) 0° 180° q CONDUCTION ANGLE D.C. =180°q 120° 90° 60° 30°
-40C 25C 125C PGM=5W f >50Hz duty<20%
f=50Hz,Half Sine Wave,Non-Repetitive,Tj=125 TIME (s) 500 1000 1500 2000 2500 3000 3500 4000 4500 SURGE ON-STATE CURRENT (A) 0.02s I TSM