PDT15116 NIEC | Alldatasheet

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ç ç THYRISTOR MODULE Maximum Ratings Approx Net Weight:280g Grade ParameterParameterParameterParameter Symbol PDT/PDH15116 Unit Repetitive Peak Off-State Voltage VDRM 1600 Non Repetitive Peak Off-State Voltage VDSM 1700 V Repetitive Peak Reverse Voltage VRRM 1600 Non Repetitive Peak Reverse Voltage VRSM 1700 V Parameter Parameter Parameter Parameter ConditionsConditionsConditionsConditions Max RatedMax RatedMax RatedMax Rated Value Value Value Value Unit Average Rectified Output Current I O(AV) 50Hz Half Sine Wave condition Tc=73°C 150 A RMS On-State Current I T(RMS) 235 A Surge On-State Current I TSM 50 Hz Half Sine Wave,1Pulse Non-Repetitive 3200 A I Squared t I 2t 2msec to 10msec 51200 A 2s Critical Rate of Turned-On Current di/dt VD=2/3VDRM, I TM=2•IO, Tj=125 °C IG=300mA, diG/dt=0.2A/µs 100 A/µs Peak Gate Power P GM 5 W Average Gate Power P G(AV) 1 W Peak Gate Current I GM 2 A Peak Gate Voltage V GM 10 V Peak Gate Reverse Voltage V RGM 5 V Operating JunctionTemperature Range Tjw -40 to +125 °C Storage Temperature Range Tstg -40 to +125 °C Isoration Voltage Viso Base Plate to Terminals, AC1min 2500 V Case mounting M6 Screw 2.5 to 3.5 Mounting torque Terminals Ftor M6 Screw 2.5 to 3.5 N•m Value per 1 Arm

FEATURES

  • 108mm Short Size Case * Isolated Base * Dual Thyristors or Thyristor and Diode Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use PDT15116 PDH1511 6PDT15116 PDH1511 6PDT15116 PDH1511 6PDT15116 PDH1511 6 OUTLINE DRAWING ç ç 150A / 1600V ç PDT PDH

ç ç Electrical • Thermal Characteristics Maximum Value. Characteristics Symbol Test Conditions Min. Typ. Max. Unit Peak Off-State Current IDM VDM= V DRM, Tj= 125 °C 50 mA Peak Reverse Current IRM VRM= V RRM, Tj= 125 °C 50 mA Peak Forward Voltage VTM ITM= 450A, Tj=25 °C 1.38 V Tj=-40°C 300 Tj=25°C 150 Gate Current to Trigger I GT V D=6V,IT=1A Tj=125°C 80 mA Tj=-40°C 5 Tj=25°C 3 Gate Voltage to Trigger V GT V D=6V,IT=1A Tj=125°C 2 V Gate Non-Trigger Voltage V GD VD=2/3VDRM Tj=125 °C 0.25 V Critical Rate of Rise of Off-State Voltage dv/dt VD=2/3VDRM Tj=125 °C 500 V/µs Turn-Off Time tq ITM=IO,VD=2/3VDRM dv/dt=20V/µs, V R=100V -di/dt=20A/µs, Tj=125°C 100 µs Turn-On Time tgt 6 µs Delay Time td 2 µs Rise Time tr VD=2/3VDRM Tj=125 °C IG=300mA, diG/dt=0.2A/µs 4 µs Latching Current I L Tj=25°C 120 mA Holding Current I H Tj=25°C 80 Rth(j-c) Junction to Case 0.25 Thermal Resistance Rth(c-f) Base Plate to Heat Sink with Thermal Compound 0.15 °C/W Value Per 1Arm

ç ç PDT/PDH15116 OUTLINE DRAWING (Dimensions in mm) ç

ON-STATE CURRENT VS. VOLTAGE PDT/PDH15116 0 1 2 3 4 5 INSTANTANEOUS ON-STATE VOLTAGE (V) 100 200 500 1000 2000 5000 INSTANTANEOUS ON-STATE CURRENT (A) Tj=25°C Tj=125°C ON-STATE CURRENT VS. VOLTAGE PDT/PDH15116 0 1 2 3 4 5 INSTANTANEOUS ON-STATE VOLTAGE (V) 100 200 500 1000 2000 5000 INSTANTANEOUS ON-STATE CURRENT (A) Tj=25°C Tj=125°C

AVERAGE ON-STATE POWER DISSIPATION for 0 40 80 120 160 200 240 AVERAGE ON-STATE CURRENT (A) 100 150 200 250 300 AVERAGE ON-STATE POWER DISSIPATION (W) PDT/PDH15116 0.02s I TSM =180°q 120° 90° 60° 30° D.C. =180°q 120° 90° 60° 30° AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE PDT/PDH15116 (50Hz SINUSOIDAL CURRENT WAVEFORM) 0 25 50 75 100 125 CASE TEMPERATURE (°C) 100 120 140 160 AVERAGE ON-STATE CURRENT (A) 0° 180° q CONDUCTION ANGLE =180°q 120° 90° 60° 30°

AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE PDT/PDH15116 (50Hz RECTANGULAR CURRENT WAVEFORM) 0 25 50 75 100 125 CASE TEMPERATURE (°C) 120 160 200 240 AVERAGE ON-STATE CURRENT (A) 0° 180° q CONDUCTION ANGLE D.C. =180°q 120° 90° 60° 30°

-40C 25C 125C PGM=5W f >50Hz duty<20%

f=50Hz,Harf Sine Wave,Non-Repetitive,On Load TIME (s) 500 1000 1500 2000 2500 3000 3500 SURGE ON-STATE CURRENT (A) 0.02s I TSM