PD8XX2 MITSUBISHI | Alldatasheet
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Technical content
FEATURES
PD8042,PD8932
- Active diameter 50µm
- Low noise
- High speed response
- Very small dark current
- High quantum efficiency Receiver for long-distance fiber - optic communication systems DISCRIPTION PD8XX2 is an InGaAs avalanche photodiode suitable for receiving the light having low noise, a wavelength band of 1000 to 1600nm. This photodiode features low noise, a high quantum efficiency and a very small dark current and is suitable for the light receiving elements for long-distance optical communications. Parameter C = 25˚C) ∗: Ct=0.6F (typ.) for PD8932 Reverse current Case temperature Storage temperature Forward current Symbol Conditions Ratings Unit IR IF TC Tstg 500 -40~+85 -40~+100 µA mA MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES ELECTRICAL/OPTICAL CHARACTERISTICS Parameter Breakdown voltage Capacitance Dark current Quantum efficiency Cutoff frequency (-3dB) Symbol Test conditions Limits Min. 0.7 2.5 0.9 100 Typ. Max. Unit V (BR)R C t ID η fc IR = 100 µ A VR = 0.9V (BR) R,f = 1MHz VR = 0.9V (BR) R M = 1, λ = 1300nm M = 10,RL = 50 Ω ,-3dB V pF nA GHz SEP .2000
Dimention : mm Dimention : mm MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES SEP .2000
Fig.1 Spectral response Fig.3 Total capacitance vs. reverse voltage fig.4 Frequency response Fig.2 Dark current, photo current and multiplication rate vs. reverse voltage Fig.5 Multiplication rate dependence of cutoff frequency MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES SEP .2000