PD8001 MITSUBISHI | Alldatasheet
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ag pet ace a MITSUBISHI InGaAs PHOTODIODES , oo A PD8XXi SERIES patie we eS Yower™ FOR OPTICAL COMMUNICATION MITSUBISHI (DISCRETE SC) BLE D m@ 6249829 0014247? & BMNITS TYPE TOT wave | PD8001, PDS931 ; DESCRIPTION FEATURES The PD8XXI series are InGaAs avalanche photodiodes de- @ High quantum effclency signed to operate in the wavelength range of 1,0~1.62m. @ Very smali dark current They provide low nolse performance, low dark current, and @ High speed response high quantum efficiency compared with germanium avalan- @ Convenient package for nongrounded operation che photodiodes, They are well suited for wide-band and ®@ Active diameter 80um long distance fiber-optic communication systems with low ‘ transmission and low material dispersion In this wavelength = APPLICATION range. Fiber-optic communication systems. ABSOLUTE MAXIMUM RATINGS [Taymor To Paramotor Ratings Tait] [in [Reverse cure | 800A [te [Fowardeurent ml [To _|Casotemperauwo | SOHO - ELECTRICAL/OPTICAL CHARACTERISTICS (to=25¢) : [ome [rome [rte pe P| | [ma [Bsskdow winger = [cy | Total capactanco | Vamos |= | ns | = | er | [to [Oakoure VeVi | = | 100 PA [C9 cust tte tnt = | [tec et teguoney a, a0 a | Le Pescose mito fours me . MITSUBISHI 1-2 AR : :
. MITSUBISHI InGaAs PHOTODIODES PD8XX1 SERIES MITSUBISHI (DISCRETE SC) BLE D BM 6249829 OOL424S T BMENITS FOR OPTICAL COMMUNICATION OUTLINE DRAWINGS : F-41-O7 PD8001 [=al ho. ; PAS ¢
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. MITSUBISHI InGaAs PHOTODIODES MITSUBISHI (DISCRETE SC) SLE D BM 6249829 0014249 1 BMMITS FOR OPTICAL COMMUNICATION ——~ Tro? Fig. Spectral response Hl spectrat response Fig. 1 shows typical spectral response for the PD8XX1 127 hum series, Dashed line shows quantum efficlency. The PD8XX1 atticiency)” 190% 90% 8076 1, are sultable for detection of the spectral 1000 ~ 1600nm 1.0} 7 es oA range. In this range, typical quantum efficiency is 80%. Z od AUN oe 2* 7 ? B = ELT | ee | I acme “LZT Tr INI o 0.8 10°12 14 16 18 ‘Wavelength 2 (nm) Multiplication characteristics ce Oe ee and multiplication Fig, 2 shows typical dark current, photocurrent and multi- " plication rate vs. reverse voltage for the PD8XX1 series. 10 dow ‘The dark current is 10nA typ. and multiplication rate Is 10 4 [otter | oT TU z = 10° GaN imi pee ee Tl. | 107 at 100 i | ee hale wl beAT | 8 0 20 40 60 80 100 . Reverse voltage V_ (V) Ell capacitance vs. reverse voltage . Fig, 3 shows typleal capacitance vs. reverse voltage for the Fig.8 Capacitance vs. reverse voltage PDBXXt series. The total capacitance is typically 1pF at Va=0.9Vianyn- eee a & NL _ \\_| [| | Tra 0 al 0 10 20 30 40 ~~80 60 : : Reverse voltage Vx (V) . a J MITSUBISHI 1-23 ELECTRIC
MITSUBISHI InGaAs PHOTODIODES . - PD8XX1 SERIES MITSUBISHI (DISCRETE SC) 3LE D MM 6249829 OOL4250 & BMMITS FOR OPTICAL COMMUNICATION 7-441-07 Fig. 4 Excess noise factor vs. multiplication rato El noise charactacristlos Fig. 4 shows excess noise factor vs. multiplication rate at 500) 1.3um and 1.65um wavelength range for the PD&XXt oA=1.3¢m . ores. AA=1.55;m | Excesd nolse factor In general, excess noise factor F Is approximated by ex- y 10 at . pression M. ris called excess noise factor. X for the Fy a —| | _v 0.9 PDBXX1 series approximates to about 0.7. H ae Hy 101 LE 4.6 A . " 10 . 100 ‘Multiplication rate. M_ SSS 4-24 fe MiTsuBISH ELECTRIC .