PD7005 MITSUBISHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

. MITSUBISHI InGaAs PHOTODIODES | MITSUBISHI (DISCRETE SC) SLE D B® 6249429 0014239 9 BAMITS . FOR OPTICAL COMMUNICATION T4107 TYPE we |PD7005, PD7035, PD7935 DESCRIPTION FEATURES Mitsubishi PD7XX5 series are InGaAs photodiodes de- @ High quantum efficiency signed to operate In the wavelength range of 1.0~1.6um @ Very smail dark current, less than 1nA with high performance superlor to germanium photodiodes @ High speed response in quantum efficlency and dark current. They are well © Convenient package for nongrounded operation suited for wide-band and long distance fiber-optic com- © Active diameter 802m munication systems with low transmission loss and low @ Wavelength range 1000~1600nm material dispersion in this wavelength range. @ High reliability, long operation life : APPLICATION Fiber-optic communication systems. ABSOLUTE MAXIMUM RATINGS Teverse votage Vv [te Forward eurent ~ 7 2 mA Gate lemperatvre — =n~ 480 c . ELECTRICAL/OPTICAL CHARACTERISTICS (to=25¢) pap me eee eee | a a a a a [to foamewot Mat = [7R | Responsiviy nv, 2h Sen | 06 | | =" | aw [ina ise ana ta tine VaSIOV. Aum =O a ‘* Coupling response Is typical 0.7 A/W to light output (GI 60/125) about PD7035. . eee , . 9 MITSUBISHI . . ELECTRIC 4-13

MITSUBISHI InGaAs PHOTODIODES : PD7XX5 SERIES MITSUBISHI (DISCRETE SC) SLE D BM 6249829 OOL4240 5 BEMITS FOR OPTICAL COMMUNICATION THO) OUTLINE DRAWINGS #5.440.2 Dimensions in mm . . PD7005 4.70.2 . EN . 5 ao Y Mlindow Y coranie da x /® “i rH ‘ _ aD [ease @ AN ; Bo suston ¢ ry Pt “ J UM ; ie A “eel flees . P.C.0 . Dimensions in mm , «@) a Laat 4-14 ate nue . .

: MITSUBISHI InGaAs PHOTODIODES MITSUBISHI (DISCRETE SC) SLE D BM 6249429 0014241 7 BMMITS FOR OPTICAL COMMUNICATION —_— T-a1-071 Fig. 1 Spectral response El specicat response Typloal spectral response at Va=10V is shown in Fig. 1. 1.9 == The PO7XXE are sultable for detection of the spectral re- Lt per glon between 1000 and 1600nm. The responsivity increases peri | tt regularly in this region and decreases abruptly above z | rl | | [tf 1600nm. At a wavelength of 1300nm, the responsivity Is 2 viet {[ | fF 4 Ula abot 284, et Py : 2 ol , Eero ; : j | fy yy | 1000 11001200 1300 1400 1500 1600 . Wevelength 4 (nm) Fig. 2 Dark current va. reverse voltage at case temperatures of 25, 50 and 80°C Bh ark current Typloal dark current vs, reverse bias characteristics are 10-4 = shown in Fig. 2. The dark current at Va=10V, To=25 is |_ ‘ypically 50pA. 7ap= 4 See [ Ss : . 10-" —| ee ee oO 5 10 15 20 Reverse voltage Va (V) Fig. 3 Total capacitance vs. reverse voltage at frequency of Ell total capacitance iM ‘ Typleal capacitance vs. reverse blas characteristics are 2 shown’ In Fig. 3. The test frequency Is 1MHz. The total capacitance Is typically 1pF at Va=10V. : & Fy ol 0 10 20 + Reverse voltage Vn (V) v

9 MITSUBISHI 15

. MITSUBISHI InGaAs PHOTODIODES . PD7XX5S SERIES MITSUBISHI (DISCRETE SC) SLE D MM 6249829 OOl4e42 9 BMMITS . FOR OPTICAL COMMUNICATION rte ear ich 7-41-07 Fig. 4 Frequency response Frequency response : Typical frequency response Is shown in Fig. 4 The ML7XX1 : s. (wavelength : 1800nm) are used as light sources and the [ew [| PD7XXS are biased at 10V. The cut off frequency (—3dB) is ° a higher than 1GHz. a || NI 34 N Pi | | 3 -3| oe i) se 0 0.5 1.0 15 Frequency { (GHz) Eileutse response Fig.5 Pulse response id as fi . tir \\ ~ \\ re ay Hah sources Rise and fall times of about 0.3ns_—— “gg. ae eee eee eee ete} et AT TT I i eff dd nf LTT | Ta yyy , LVI tte | ATT I BEER EERE S [Lt Tet] Fi Time (nsec) : 200ps/aiv eee