PD4M440L NIEC | Alldatasheet

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MOSFET MODULE MODULE MODULE MODULE Dual 30A 450V/500VDual 30A 450V/500VDual 30A 450V/500VDual 30A 450V/500V PD4M441L / PD4M440LPD4M441L / PD4M440LPD4M441L / PD4M440LPD4M441L / PD4M440L MAXMUM RATINGS Ratings Symbol PD4M441L PD4M440L Unit Drain-Source Voltage (VGS=0V) V DSS 450 500 V Gate - Source Voltage V GSS +/ - 20 V Duty=50% 30 (Tc=25 °C) Continuous Drain Current D.C. ID 21 (Tc=25°C) A Pulsed Drain Current I DM 60 Tc=25 °C) A Total Power Dissipation P D 230 Tc=25 °C) W Operating Junction Temperature Range T jw -40 to +150 °C Storage Temperature Range T stg -40 to +125 °C Isolation Voltage Terminals to Base AC, 1 min.) V ISO 2000 V Module Base to Heatsink 3.0 Mounting Torque Bus Bar to Main Terminals FTOR 2.0 N•m ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit VDS=VDSS,VGS=0V - - 1.0 Zero Gate Voltage Drain Current I DSS Tj=125°C, VDS=VDSS,VGS=0V - - 4.0 mA Gate-Source Threshold Voltage V GS(th) V DS=VGS, ID=1mA 2.0 3.2 4.0 V Gate-Source Leakage Current I GSS V GS=+/- 20V,VDS=0V - - 1.0 µA Static Drain-Source On-Resistance r DS(on) V GS=10V, ID=15A - 190 210 m-ohm Forward Transconductance g fs V DS=15V, ID=15A - 27 - S Input Capacitance C ies - 5.2 - nF Output Capacitance C oss - 1.1 - nF Reverse Transfer Capacitance C rss VDS=25V,VGS=0V,f=1MHz - 0.18 - nF Turn-On Delay Time t d(on) - 100 - Rise Time t r - 60 - Turn-Off Delay Time t d(off) - 180 - Fall Time t f VDD= 1/2VDSS ID=15A VGS= -5V, +10V RG= 7ohm - 50 - ns FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Continuous Source Current I S D.C. - - 21 A Pulsed Source Current I SM - - - 60 A Diode Forward Voltage V SD I S=30A - - 2.0 V Reverse Recovery Time t rr - 750 - ns Reverse Recovery Q r IS=30A, -dis/dt=100A/µs - 17 - µC THERMAL CHARACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit MOS FET - - 0.56 Thermal Resistance, Junction to Case Rth(j-c) Diode - - 0.56 Thermal Resistance, Case to Heatsink Rth(c-f) Mounting surface flat, smooth, and greased - - 0.1 °C/W Dimension(mm) FEATURES * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS * Power Supply for the Communications and the Induction Heating Approximate Weight : 220g OUTLINE DRAWING Circuit 108.0

108.0

ççççç ç PD4M440L/441L, P2H4M440L/441L ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç 02468 1 0 1 2 Drain to Source Voltage V DS (V) DrainCurrent I D (A) Fig.1- Output Characteristics (Typical) TC=25 ℃ VGS=10V 250 μs PULSE TEST 0 2 4 6 8 10 12 14 160 Gate to Source Voltage V GS (V) Drain to Source Voltage V DS (V) Fig.2- Drain to Source On Voltage vs. Gate to Source Voltage (Typical) TC=25 ℃ ID=15A ID=30A 250 μs PULSE TEST ID=10A 1 3 10 30 100 Drain to Source Voltage V DS (V) Capacitance C (nF) Fig.4- Capacitance vs. Drain to Source Voltage (Typical) Ciss Coss VGS=0V f=1MHZ TC=25 ℃ Crss 0 50 100 150 200 250 Total Gate Charge Qg (nC) Gate to Source Voltage V GS (V) Fig.5- Gate Charge vs. Gate to Source Voltage (Typical) VDD=400V ID=20A VDD=250V VDD=100V 1 2 5 10 20 50 100 200 0.1 0.3 0.05 Series Gate Impedance R G (Ω) Switching Time t (μs) Fig.6- Series Gate Impedance vs. Switching Time (Typical) VDD=250V ID=15A TC=25 ℃ 80μs Pulse Test ton toff -40 0 40 80 120 160 Junction Temperature Tj (℃) Drain to Source Voltage V DS (V) Fig.3- Drain to Source On Voltage vs. Junction Temperature (Typical) VGS=10V ID=10A ID=30A 250μs PULSE TEST ID=15A

ççççç ç PD4M440L/441L, P2H4M440L/441L ç ç ç õç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç õç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç 1 3 10 300.7 70 100 300 1000 Drain Current I D (A) Switching Time t (μs) Fig.7- Drain Current vs. Switching Time (Typical) td(off) tf tr td(on) VDD=250V RG=7Ω TC=25 ℃ 80μs Pulse Test 0 100 200 300 400 500 600 100 300 1000 3000 -dis/dt (A/μs) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) Fig.9- Reverse Recovery Characteristics (Typical) IRrM trr …IS=15A ― IS=30A TJ=150 ℃ 1 3 10 30 100 300 1000 0.2 0.5 100 200 Drain to Source Voltage V DS (V) Drain Current I D (A) Fig.10- Maximum Safe Operating Area TC=25℃ Tj=150 ℃MAX Single Pulse 10μs 100 μs Operation in this area is limited by R DS(on) 1ms DC 10ms 440L441L 10-5 10-4 10-3 10-2 10-1 11 0 1 1x10-2 3x10-2 1x10-1 3x10-1 1x101 PULSE DURATION t (s) Normalized Transient Thermal Impedance [rth (J-C)/ Rth (J-C) ] Fig.11- Normalized Transient Thermal Impedance (MOSFET) Per Unit Base R th(j-c)= 0.56℃/W

1 Shot Pulse

0 0.4 0.8 1.20 Source to Drain Voltage V SD (V) Source Current I S (A) Fig.8- Source to Drain Diode Forward Characteristics (Typical) TJ=125 ℃ TJ=25 ℃