PD4M440H NIEC | Alldatasheet

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MOSFET MODULE MODULE MODULE MODULE Dual 30A 450V/500VDual 30A 450V/500VDual 30A 450V/500VDual 30A 450V/500V PD4M441H / PD4M440HPD4M441H / PD4M440HPD4M441H / PD4M440HPD4M441H / PD4M440H MAXMUM RATINGS Ratings Symbol PD4M441H PD4M440H Unit Drain-Source Voltage (VGS=0V) V DSS 450 500 V Gate - Source Voltage V GSS +/ - 20 V Duty=50% 30 (Tc=25 °C) Continuous Drain Current D.C. ID 21 (Tc=25°C) A Pulsed Drain Current I DM 60 Tc=25 °C) A Total Power Dissipation P D 230 Tc=25 °C) W Operating Junction Temperature Range T jw -40 to +150 °C Storage Temperature Range T stg -40 to +125 °C Isolation Voltage Terminals to Base AC, 1 min.) V ISO 2000 V Module Base to Heatsink 3.0 Mounting Torque Bus Bar to Main Terminals FTOR 2.0 N•m ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit VDS=VDSS,VGS=0V - - 1.0 Zero Gate Voltage Drain Current I DSS Tj=125°C, VDS=VDSS,VGS=0V - - 4.0 mA Gate-Source Threshold Voltage V GS(th) V DS=VGS, ID=1mA 2.0 3.2 4.0 V Gate-Source Leakage Current I GSS V GS=+/- 20V,VDS=0V - - 1.0 µA Static Drain-Source On-Resistance r DS(on) V GS=10V, ID=15A - 190 210 m-ohm Drain-Source On-Voltage V DS(on) V GS=10V, ID=15A - 3.3 3.5 V Forward Transconductance g fs V DS=15V, ID=15A - 27 - S Input Capacitance C ies - 5.2 - nF Output Capacitance C oss - 1.1 - nF Reverse Transfer Capacitance C rss VDS=25V,VGS=0V,f=1MHz - 0.18 - nF Turn-On Delay Time t d(on) - 100 - Rise Time t r - 60 - Turn-Off Delay Time t d(off) - 180 - Fall Time t f VDD= 1/2VDSS ID=15A VGS= -5V, +10V RG= 7ohm - 50 - ns FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Continuous Source Current I S D.C. - - 21 A Pulsed Source Current I SM - - - 60 A Diode Forward Voltage V SD I S=30A - - 1.8 V Reverse Recovery Time t rr - 100 - ns Reverse Recovery Q r IS=30A, -dis/dt=100A/µs - 0.15 - µC THERMAL CHARACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit MOS FET - - 0.56 Thermal Resistance, Junction to Case Rth(j-c) Diode - - 2.0 Thermal Resistance, Case to Heatsink Rth(c-f) Mounting surface flat, smooth, and greased - - 0.1 °C/W Dimension(mm) FEATURES * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel * 300KHz High Speed Switching Possible TYPICAL APPLICATIONS * Power Supply for the Communications and the Induction Heating Approximate Weight : 220g OUTLINE DRAWING 108.0 Circuit

108.0

D (A) DRAIN TO SOURCE V O LTAGE VDS (V) ˆЖT1VMTF5FTU 7(4 'JH5ZQJDBM0VUQVU$IBSBDUFSJTUJDT 01 2 5 10 20 50 100 CAP ACIT ANCE C (nF) DRAIN TO SOURCE V O LTAGE VDS (V) 7(4 L)[ $JTT $PTT $STT 'JH5ZQJDBM$BQBDJUBODF 'JH7T%SBJO4PVSDF7PMUBHF 1000 500 100 200 10 12 5 10 20 50 SWITCHING TIME t (ns) Њ7%% 75$ ˆЖT1VMTF5FTU DRAIN CURRENT I D (A) UE PGG UE PO US UG 'JH5ZQJDBM4XJUDIJOH5JNF 'JH7T%SBJO$VSSFOU 200 100 0.5 0.21 2 5 10 20 50 100 500200 1000 DRAIN CURRENT I D (A) DRAIN TO SOURCE V O LTAGE VDS (V) ˆ5K ˆ."94JOHMF1VMTF ЖT NT NT ЖT ʵ)ʵ) 0QFSBUJPOJOUIJTBSFB JTMJNJUFECZ3%4 PO 'JH.BYJNVN4BGF0QFSBUJOH"SFB 00 4 8 12 16 DRAIN TO SOURCE ON VOLTAGE V DS (on)(V) GA TE TO SOURCE V O LTAGE VGS (V) ˆЖT1VMTF5FTU 'JH5ZQJDBM%SBJO4PVSDF0O7PMUBHF 'JH7T(BUF4PVSDF7PMUBHF 00 40 80 120 160 200 240 GA TE T O SOURCE V OLTAGE V GS (V) TO TAL GATE CHRA GE Qg (nC) 7%% 'JH5ZQJDBM(BUF$IBSHF 'JH7T(BUF4PVSDF7PMUBHF 00 0.4 0.8 1.2 1.6 SOURCE CURRENT I S (A) SOURCE T O DRAIN VO LTAGE VSD (V) ЖT1VMTF5FTU ˆ 5K ˆ 'JH5ZQJDBM4PVSDF%SBJO%JPEF'PSXBSE 'JH$IBSBDUFSJTUJDT 10-2 100 10-1 10-5 10-4 10-3 10-2 10-1 100 101 NORMALIZED TRANSIENTTHERMAL IMPED ANCE th(j-c) / R th(j-c) PULSE DURA TION t (s) 1FS6OJU#BTF 3UI KD 4IPU1VMTF 'JH /PSNBMJ[FE5SBOTJFOU5IFSNBM JNQFEBODF .04'&5 0-40 0 40 80 120 160 DRAIN TO SOURCE ON VOLTAGE V DS (on)(V) JUNCTION TEMPERA TURE Tj (ɹ) 7(4 7ЖT1VMTF5FTU ˆ 'JH5ZQJDBM%SBJO4PVSDF0O7PMUBHF 'JH7T+VODUJPO5FNQFSBUVSF 0.5 0.2 0.1 0.052 5 10 20 50 100 200 SWITCHING TIME t (Ж "7%% 75$ ˆЖT1VMTF5FTU SERIES GA TE IMPED ANCE R G (ɹ)Њ UPGG UPO 'JH5ZQJDBM4XJUDIJOH5JNF 'JH7T4FSJFT(BUFJNQFEBODF 500 200 100 50 100 200 300 400 500 600 REVERSE RECO VER Y TIME t rr (ns) REVERSE CURRENT I R (A) -dis/dt (A/Жs) USS "ɹ*4 "5K ˆ 'JH5ZQJDBM3FWFSTF3FDPWFSZ$IBSBDUFSJTUJDT 10-2 100 10-1 10-5 10-4 10-3 10-2 10-1 100 101 NORMALIZED TRANSIENTTHERMAL IMPED ANCE th(j-c) / R th(j-c) PULSE DURA TION t (s) 1FS6OJU#BTF 3UI KD 4IPU1VMTF 'JH /PSNBMJ[FE5SBOTJFOU5IFSNBM JNQFEBODF %*0%&