PCP1103 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Adoption of MBIT process.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High speed switching.
  • High allowable power dissipation.
  • Halogen free compliance. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO -30 V Collector-to-Emitter Voltage V CEO -30 V Emitter-to-Base Voltage V EBO -5 V Collector Current I C -1.5 A Collector Current (Pulse) I CP -5 A Base Current I B -300 mA Collector Dissipation P C When mounted on ceramic substrate (450mm ×0.8mm) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Marking : RF N1208EA MS IM TC-00001718 SANYO Semiconductors DATA SHEET PCP1103 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications www.semiconductor-sanyo.com/network

No. A1346-2/4 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB= -30V, IE=0A -0.1 μA Emitter Cutoff Current I EBO VEB= -4V, IC=0A -0.1 μA DC Current Gain h FE VCE= -2V, IC= -100mA 200 560 Gain-Bandwidth Product f T VCE= -10V, IC= -300mA 450 MHz Output Capacitance Cob V CB= -10V, f=1MHz 9 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C= -0.75A, IB= -15mA -250 -375 mV Base-to-Emitter Saturation Voltage V BE(sat) I C= -0.75A, IB= -15mA -0.85 -1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC= -10μA, IE=0A -30 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC= -1mA, RBE=∞ -30 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE= -10μA, IC=0A -5 V Turn-On Time t on See specifi ed Test Circuit. 35 ns Storage Time t stg See specifi ed Test Circuit. 115 ns Fall Time t f See specifi ed Test Circuit. 30 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007A-004 1 : Base 2 : Collector 3 : Emitter SANYO : PCP 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 0.75 Top View Bottom View RB VCC= --12V IC=--20IB1=20IB2=--0.75A 50Ω INPUT OUTPUT 820μF PW=50μs IB1 D.C.≤1% IB2 RL IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V --50mA --40mA --30mA --20mA --2.0 --1.4 --1.2 --1.6 --1.8 --1.0 --0.4 --0.2 --0.6 --0.8 IB=0mA IT14106 --2mA --4mA --6mA --10mA--8mA VCE= --2V Ta=75 --25 --1.6 --1.2 --0.6 --0.8 --1.4 --1.0 --0.2 --0.4 IT14107

No. A1346-3/4 VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- V VCE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V VBE(sat) -- IC Collector Current, IC -- A A S O Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A hFE -- IC DC Current Gain, hFE Collector Current, IC -- A Collector Dissipation, PC -- W PC -- Ta Ambient Temperature, Ta -- °C fT -- IC Cob -- VCB Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF --0.1 --1.0 --10 --0.01 IC= --1.5A 10ms 1ms 100ms DC operation (Ta=25 °C) ICP= --5A <10μs IT14112 --1.0 --0.1 Ta=--25°C 75°C 23 5 2 7 --1.032 3 57--0.01 IC / IB=50 IT14111 25°C --0.1 --0.01 Ta=75 25°C --25°C IT14109 IC / IB=20 100 μs 500 μs Ta=75°C --25°C VCE= --2V IT14108 100 25°C 1.6 1.0 1.2 1.4 1.3 0.8 0.6 0.4 0.2 2006 0 40 80 100 140 120 160 IT14113 1000 100 VCE= --10V IT01679 100 23 5 70.1 1.0 23 5 7 10 23 5 IT01681 f=1MHz --0.1 --1.0 --0.01 Ta=75 25°C --25°C IT14110 IC / IB=50 When mounted on ceramic substrate (450mm2×0.8mm) Ta=25°C Single pulse When mounted on ceramic substrate (450mm2×0.8mm)

No. A1346-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of November, 2008. Specifi cations and information herein are subject to change without notice. PC -- Tc Collector Dissipation, PC -- W Case Temperature, Tc -- °C 4.0 2.5 3.0 3.5 2.0 1.5 1.0 0.5 2006 0 40 80 100 140 120 160 IT14114