PCHMB200A6A_1 NIEC | Alldatasheet
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ç ç ċİĴĬĵĺİĶĵāʦĴĴʧç ిѹç çĊĶijijĬĪĻĶĹôČĴİĻĻĬĹçĝĶijĻĨĮĬç ̫ĊČĚç ̒̌̌ç ̫ç ిѹç çĎĨĻĬôČĴİĻĻĬĹçĝĶijĻĨĮĬç ̫ĎČĚç ±̎̌ç ̫ç ç çĊĶijijĬĪĻĶĹçėĶľĬĹçċİĺĺİķĨĻİĶĵç ̥Ċç ̓̔̌ç ̬ç Թ ç çđļĵĪĻİĶĵçěĬĴķĬĹĨĻļĹĬçęĨĵĮĬç ̩ıç ʵ̐̌ʙʴ̍̑̌ç ˆç çอଘԹ ç çĚĻĶĹĨĮĬçěĬĴķĬĹĨĻļĹĬçęĨĵĮĬç ̩ĺĻĮç ʵ̐̌ʙʴ̍̎̑ç ˆç çઈԑѹ ïěĬĹĴİĵĨijçĻĶçĉĨĺĬçĈĊóøĴİĵļĻĬðç çĐĺĶijĨĻİĶĵçĝĶijĻĨĮĬç ̫İĺĶç ̎ó̑̌̌ç ̫ ïęĔĚðç ĔĶīļijĬçĉĨĺĬçĻĶçďĬĨĻĺİĵIJç ̏ʢ̏̌õ̒ʣççకΊ͚τϧΫ ç çĔĶļĵĻİĵĮçěĶĹĸļĬç ĉļĺĩĨĹçĻĶçĔĨİĵçěĬĹĴİĵĨijç ̛ĻĶĹç ̎ʢ̎̌õ̐ʣç ̣ɾ̼ç ïIJĮĭŋĪĴðç çίϨΫλःஅిྲྀ ç çĊĶijijĬĪĻĶĹôČĴİĻĻĬĹçĊļĻôĖĭĭçĊļĹĹĬĵĻç ̞ĊČĚçç ̫ĊČçĄçý÷÷ĝóç̫ĎČçĄç÷ĝç ʵç ʵç ̎õ̌ ç ̼̖ç çήʔτ࿙Εిྲྀ ç çĎĨĻĬôČĴİĻĻĬĹçēĬĨIJĨĮĬçĊļĹĹĬĵĻç ̞ĎČĚçç ̫ĎČçĄç±ù÷ĝóç̫ĊČçĄç÷ĝç ʵç ʵç ̍õ̌ ç µ̖ç ిѹç çĊĶijijĬĪĻĶĹôČĴİĻĻĬĹçĚĨĻļĹĨĻİĶĵçĝĶijĻĨĮĬç ̫ĊČïĺĨĻðçç ̞ĊçĄçù÷÷Ĉóç̫ĎČçĄçøüĝç ʵç ̎õ̍ ç ̎õ̒ç ̫ç çĎĨĻĬôČĴİĻĻĬĹçěįĹĬĺįĶijīçĝĶijĻĨĮĬç ̫ĎČïĻįðçç ̫ĊČçĄçüĝóç̞ĊçĄçù÷÷ĴĈç ̐õ̌ç ʵç ̔õ̌ ç ̫ç çೖྗ༰ྔ ç çĐĵķļĻçĊĨķĨĪİĻĨĵĪĬç ̘İĬĺçç ̫ĊČĚçĄçø÷ĝóç̫ĎČçĄç÷ĝó̵ĄçøĔďŁç ʵç ù÷ó÷÷÷ ç ʵç ̛̿ ç ççęİĺĬçççççěİĴĬç ̓Ĺç ʵç ̌õ̍̑ ç ̌õ̏̌ç ççěļĹĵôĶĵççěİĴĬç ̓Ķĵç ʵç ̌õ̎̑ ç ̌õ̐̌ç ççčĨijijçççççěİĴĬç ̓ĭç ʵç ̌õ̎̌ ç ̌õ̏̑ç ؒ࣌ç çĚľİĻĪįİĵĮçěİĴĬç ççěļĹĵôĶĭĭçěİĴĬç ̓Ķĭĭç ç̫ĊĊçĄçú÷÷ĝç ç̧ēççĄçúΩç ç̧ĎççĄçúõýΩç µ͂ç çčĶĹľĨĹīçĊļĹĹĬĵĻç ̼̍͂ç ̞čĔç ç ç ̐̌̌ç ç çॱిѹ ç çėĬĨIJçčĶĹľĨĹīçĝĶijĻĨĮĬç ̫čçç ̞čçĄçù÷÷Ĉóç̫ĎČçĄç÷ĝç ʵç ̍õ̕ ç ̎õ̐ç ̫ç ç çęĬĽĬĹĺĬçęĬĪĶĽĬĹŀçěİĴĬç ̓ĹĹç ç̞čçĄçù÷÷Ĉóç̫ĎČçĄçôø÷ĝç çěįĬĹĴĨijçĐĴķĬīĨĵĪĬç ̸̴̙̳̾ç ̧ĻįïıôĪðç çđļĵĪĻİĶĵçĻĶçĊĨĺĬç ʵç ʵç ̌õ̏̔ ç ˆʗ̬ç
çççç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç 02468 1 00 100 200 300 400 Collector to Emitter Voltage V CE (V) Collector Current I C (A) Fig.1- Output Characteristics (Typical) TC=25 ℃ 10V 12V 15V VGE=20V 0 4 8 1 21 62 00 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 200A IC=80A 400A 0 4 8 12 16 200 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=125 ℃ 200A IC=80A 400A 0 150 300 450 600 750 900 100 150 200 250 300 350 400 Total Gate Charge Qg (nC) Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage V GE (V) Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) VCE=300V 200V 100V RL=1.5 Ω TC=25 ℃ 0.2 0.5 1 2 5 10 20 50 100 200100 200 500 1000 2000 5000 10000 20000 50000 100000 Collector to Emitter Voltage V CE (V) Capacitance C (pF) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) Cies Coes Cres VGE=0V f=1MHZ TC=25 ℃ 0 50 100 150 2000 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector Current I C (A) Switching Time t (μs) Fig.6- Collector Current vs. Switching Time (Typical) toff VCC=300V RG=3.6 Ω VGE=±15V TC=25 ℃ ton tr tf
çççç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç ç 1 10 1000.05 0.1 0.2 0.5 Series Gate Impedance R G (Ω) Switching Time t (μs) Fig.7- Series Gate Impedance vs. Switching Time (Typical) VCC=300V IC=200A VG=±15V TC=25 ℃ tf tr ton toff 012340 100 150 200 250 300 350 400 Forward Voltage V F (V) Forward Current I F (A) Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) TC=25 ℃ TC=125 ℃ 0 200 400 600 800 1000 12005 100 200 500 -di/dt (A/μs) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) Fig.9- Reverse Recovery Characteristics (Typical) IRrM trr IF=200A TC=25 ℃ 0 200 400 600 8000.1 0.2 0.5 100 200 500 1000 Collector to Emitter Voltage V CE (V) Collector Current I C (A) Fig.10- Reverse Bias Safe Operating Area (Typical) RG=3.6 Ω VGE=±15V TC≦125 ℃ 10-5 10-4 10-3 10-2 10-1 11 0 11x10 -3 2x10 -3 5x10 -3 1x10 -2 2x10 -2 5x10 -2 1x10 -1 2x10 -1 5x10 -1 Time t (s) Transient Thermal Impedance Rth (J-C) (℃/W) Fig.11- Transient Thermal Impedance TC=25 ℃