PCH2008 NIEC | Alldatasheet
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ç ç THYRISTOR MODULE Maximum Ratings Approx Net Weight:480g Grade ParameterParameterParameterParameter Symbol PCH2008 Unit Repetitive Peak Off-State Voltage VDRM 800 Non Repetitive Peak Off-State Voltage VDSM 900 V Repetitive Peak Reverse Voltage VRRM 800 Non Repetitive Peak Reverse Voltage VRSM 900 V Parameter Parameter Parameter Parameter ConditionsConditionsConditionsConditions Max RatedMax RatedMax RatedMax Rated Value Value Value Value Unit Average Rectified Output Current I O(AV) 50Hz Half Sine Wave condition Tc=65°C 200 A RMS On-State Current I T(RMS) 314 A Surge On-State Current I TSM 50 Hz Half Sine Wave,1Pulse Non-Repetitive 4000 A I Squared t I 2t 2msec to 10msec 80000 A 2s Critical Rate of Turned-On Current di/dt VD=2/3VDRM, I TM=2•IO, Tj=125 °C IG=300mA, diG/dt=0.2A/µs 100 A/µs Peak Gate Power P GM 5 W Average Gate Power P G(AV) 1 W Peak Gate Current I GM 2 A Peak Gate Voltage V GM 10 V Peak Gate Reverse Voltage V RGM 5 V Operating JunctionTemperature Range Tjw -40 to +125 °C Storage Temperature Range Tstg -40 to +125 °C Isoration Voltage Viso Base Plate to Terminals, AC1min 2000 V Case mounting M6 Screw 2.5 to 3.5Mounting torque Terminals Ftor M8 Screw 9.0 to 10.0 N•m Value per 1 Arm
FEATURES
- Isolated Base * Thyristor and Diode Cathode Common Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use PCH200 8PCH200 8PCH200 8PCH200 8 OUTLINE DRAWING 200A / 800V ç PCH
ç ç Electrical • Thermal Characteristics Maximum Value. Characteristics Symbol Test Conditions Min. Typ. Max. Unit Peak Off-State Current IDM VDM= V DRM, Tj= 125 °C 30 mA Peak Reverse Current IRM VRM= V RRM, Tj= 125 °C 30 mA Peak Forward Voltage VTM ITM= 600A, Tj=25 °C 1.34 V Tj=-40°C 300 Tj=25°C 150 Gate Current to Trigger I GT V D=6V,IT=1A Tj=125°C 80 mA Tj=-40°C 5 Tj=25°C 3 Gate Voltage to Trigger V GT V D=6V,IT=1A Tj=125°C 2 V Gate Non-Trigger Voltage V GD VD=2/3VDRM Tj=125 °C 0.25 V Critical Rate of Rise of Off-State Voltage dv/dt VD=2/3VDRM Tj=125 °C 500 V/µs Turn-Off Time tq ITM=IO,VD=2/3VDRM dv/dt=20V/µs, V R=100V -di/dt=20A/µs, Tj=125°C 100 µs Turn-On Time tgt 6 µs Delay Time td 2 µs Rise Time tr VD=2/3VDRM Tj=125 °C IG=300mA, diG/dt=0.2A/µs 4 µs Latching Current I L Tj=25°C 100 mA Holding Current I H Tj=25°C 60 Rth(j-c) Junction to Case 0.23 Thermal Resistance Rth(c-f) Base Plate to Heat Sink with Thermal Compound 0.1 °C/W Value Per 1Arm
ç ç PCH2008 OUTLINE DRAWING (Dimensions in mm)