PBSS2515YPN NEXPERIA | Alldatasheet
Document overview
- Manufacturer or author: Nexperia BV
- PDF pages: 11
Technical content
Datasheet sections
- 15 V low VCEsat NPN/PNP transistor
15 V low VCEsat NPN/PNP transistor
1 October 2022 Product data sheet
- Low collector-emitter saturation voltage
- High current capability
- Replaces two SC-70 packaged low VCEsat transistors on same PCB area
- Reduces required PCB area
- Reduced pick and place costs. 3. Applications
- General purpose switching and muting
- Low frequency driver circuits
- LCD backlighting
- Supply line switching circuits
- Battery driven equipment (mobile phones, video cameras and hand-held devices). 4. Quick reference data
Table 1. Quick reference data
Table 2. Pinning information
1 E1 emitter TR1
2 B1 base TR1
3 C2 collector TR2
4 E2 emitter TR2
5 B2 base TR2
6 C1 collector TR1
Table 3. Ordering information Table 4. Marking codes Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C - - -25 mV IC = -200 mA; IB = -10 mA; Tamb = 25 °C - - -150 mV VCEsat collector-emitter saturation voltage - - -250 mV RCEsat collector-emitter saturation resistance - 300 500 mΩ VBEsat base-emitter saturation voltage IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - - -1.1 V VBEon base-emitter turn-on voltage VCE = -2 V; IC = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - - -0.9 V fT transition frequency VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 °C 100 280 - MHz Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - - 10 pF 400 600 200 mld687 10- 1 1 10 IC (mA) hFE 102 103 (2) (1) (3) VCE = 2 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 1. TR1 (NPN): DC current gain as a function of collector current; typical values 200 1200 400 600 800 1000 mld689 110- 1 IC (mA) VBE (mV) 10 102 103 (1) (3) (2) VCE = 2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig. 2. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values PBSS2515YPN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. All rights reserved Product data sheet 1 October 2022 4 / 11
IC (mA) VCEsat (mV) 102 103 (1) (3) (2) IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 3. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 200 1200 400 600 800 1000 mld690 110- 1 IC (mA) VBEsat (mV) 10 102 103 (2) (3) (1) IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 4. TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values 102 10-1 mld692 10-1 1 10 IC (mA) RCEsat ( ) 102 103 (2) (1) (3) IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 5. TR1 (NPN): Equivalent on-resistance as a function of collector current; typical values (1)(2)(3)(4) (6) (8) IC (mA) VCE (V) 1200 800 400 2 104 6 8 mld688 (9) (10) (7) (5) Tamb = 25 °C (1) IB = 4.6 mA (2) IB = 4.14 mA (3) IB = 3.68 mA (4) IB = 3.22 mA (5) IB = 2.76 mA (6) IB = 2.3 mA (7) IB = 1.84 mA (8) IB = 1.38 mA (9) IB = 0.92 mA (10) IB = 0.46 mA Fig. 6. TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values PBSS2515YPN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. All rights reserved Product data sheet 1 October 2022 5 / 11
- 10- 1 - 1 - 10 IC (mA) hFE - 102 - 103 (2) (1) (3) VCE = −2 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 7. TR2 (PNP): DC current gain as a function of collector current; typical values - 200 - 1200 - 400 - 600 - 800 - 1000 mld695 - 1- 10- 1 IC (mA) VBE (mV) - 10 - 102 - 103 (1) (3) (2) VCE = −2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig. 8. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values - 103 - 102 - 10 - 1 mld697 - 10- 1 - 1 - 10 IC (mA) VCEsat (mV) - 102 - 103 (1)(2) (3) IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 9. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values - 200 - 1200 - 400 - 600 - 800 - 1000 mld696 - 1- 10- 1 IC (mA) VBEsat (mV) - 10 - 102 - 103 (2) (3) (1) IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 10. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values PBSS2515YPN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. All rights reserved Product data sheet 1 October 2022 6 / 11
-10-1 -1 -10 IC (mA) RCEsat ( ) -102 -103 (1) (3)(2) IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 11. TR2 (PNP): Equivalent on-resistance as a function of collector current; typical values (1)(2)(3)(4) (5) (6) (7) (8) (10) IC (mA) VCE (V) - 1200 - 800 - 400 mld694 (9) Tamb = 25 °C (1) IB = −7 mA (2) IB = −6.3 mA (3) IB = −5.6 mA (4) IB = −4.9 mA (5) IB = −4.2 mA (6) IB = −3.5 mA (7) IB = −2.8 mA (8) IB = −2.1 mA (9) IB = −1.4 mA (10) IB = −0.7 mA Fig. 12. TR2 (PNP): Collector current as a function of collector-emitter voltage; typical values 11. Package outline 0.25 0.10 0.3 0.2 pin 1 index 1.3 0.65 2.2 2.0 1.35 1.15 2.2 1.8 1.1 0.8 0.45 0.15 1 32 46 5 14-10-03Dimensions in mm Fig. 13. Package outline TSSOP6 (SOT363) PBSS2515YPN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. All rights reserved Product data sheet 1 October 2022 7 / 11
- Soldering solder lands solder resist occupied area solder paste sot363_fr 2.65 2.35 0.4 (2×) 0.6 (2×) 0.5 (4×) 0.5 (4×) 0.6 (4×) 0.6 (4×) 1.5 1.8 Dimensions in mm Fig. 14. Reflow soldering footprint for TSSOP6 (SOT363) sot363_fw solder lands solder resist occupied area preferred transport direction during soldering 5.3 1.3 1.3 1.5 0.3 1.5 4.5 2.45 2.5 Dimensions in mm Fig. 15. Wave soldering footprint for TSSOP6 (SOT363) PBSS2515YPN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. All rights reserved Product data sheet 1 October 2022 8 / 11
Table 8. Revision history
- Legal texts have been adapted to the new company name where appropriate.
- Product(s) changed to non-automotive qualification. Please refer to nexperia.com for automotive (-Q). PBSS2515YPN v.2 20050111 Product data sheet - PBSS2515YPN v.1 PBSS2515YPN v.1 20020508 Product data sheet - - PBSS2515YPN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. All rights reserved Product data sheet 1 October 2022 9 / 11
- Legal information Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. 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Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PBSS2515YPN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2022. All rights reserved Product data sheet 1 October 2022 10 / 11