PBSS2515VPN NEXPERIA | Alldatasheet
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Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia
Supersedes data of 2001 Nov 07
2005 Jan 11
15 V low VCE(sat) NPN/PNP
2005 Jan 11 2
NXP Semiconductors Product data sheet
15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN
FEATURES
- 300 mW total power dissipation
- Very small 1.6 × 1.2 mm ultra thin package
- Excellent coplanarity due to straight leads
- Low collector-emitter saturation voltage
- High current capability
- Improved thermal behaviour due to flat lead
- Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area
- Reduces required PCB area
- Reduced pick and place costs. APPLICATION
- General purpose switching and muting
- Low frequency driver circuits
- LCD backlighting
- Audio frequency general purpose amplifier applications
- Battery driven equipment (mobile phones, video cameras and hand-held devices).
DESCRIPTION
NPN/PNP low VCEsat transistor pair in a SOT666 plastic package. MARKING QUICK REFERENCE DATA PINNING TYPE NUMBER MARKING CODE PBSS2515VPN N8 SYMBOL PARAMETER MAX. UNIT VCEO collector-emitter voltage 15 V ICM peak collector current 1 A RCEsat equivalent on-resistance <500 mΩ PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 handbook, halfpage MAM443 13 2 TR1 TR2 6 45 123 46 5 Top view Fig.1 Simplified outline (SOT666) and symbol.
ORDERING INFORMATION
PBSS2515VPN − plastic surface mounted package; 6 leads SOT666
2005 Jan 11 3
NXP Semiconductors Product data sheet In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient notes 1 and 2 416 K/W
2005 Jan 11 4
NXP Semiconductors Product data sheet Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: t p ≤ 300 μs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current VCB = 15 V; IE = 0 A − − 100 nA VCB = 15 V; IE = 0 A; Tj = 150 °C − − 50 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA hFE DC current gain VCE = 2 V; IC = 10 mA 200 − − VCE = 2 V; IC = 100 mA; note 1 150 − − VCE = 2 V; IC = 500 mA; note 1 90 − − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 25 mV IC = 200 mA; IB = 10 mA − − 150 mV IC = 500 mA; IB = 50 mA; note 1 − − 250 mV RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 − 300 <500 mΩ VBEsat base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 − − 1.1 V VBE base-emitter turn-on voltage VCE = 2 V; IC = 100 mA; note 1 − − 0.9 V NPN transistor fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 250 420 − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0 A; f = 1MHz − 4.4 6 pF PNP transistor fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 100 280 − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0 A; f = 1MHz − − 10 pF
2005 Jan 11 5
NXP Semiconductors Product data sheet handbook, halfpage 400 600 200 MLD643 10−1 11 0 IC (mA) hFE 102 103 (2) (1) (3) Fig.2 DC current gain as a function of collector current; typical values. TR1 (NPN) VCE = 2 V. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage 200 1200 400 600 800 1000 MLD645 110−1 IC (mA) VBE (mV) 10 10 2 103 (1) (3) (2) Fig.3 Base-emitter voltage as a function of collector current; typical values. TR1 (NPN) VCE = 2 V. (1) T amb = −55 °C. (2) T amb = 25 °C. (3) T amb = 150 °C. handbook, halfpage 103 102 MLD647 10−1 11 0 IC (mA) VCEsat (mV) 102 103 (1) (3) (2) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. TR1 (NPN) IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage 200 1200 400 600 800 1000 MLD646 110−1 IC (mA) VBEsat (mV) 10 10 2 103 (2) (3) (1) Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. TR1 (NPN) IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C.
2005 Jan 11 6
NXP Semiconductors Product data sheet handbook, halfpage 102 10−1 MLD648 10−1 11 0 IC (mA) RCEsat (Ω) 102 103 (2) (1) (3) Fig.6 Equivalent on-resistance as a function of collector current; typical values. TR1 (NPN) IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage (1)(2)(3)(4) (6) (8) IC (mA) VCE (V) 1200 800 400 21 0 468 MLD644 (9) (10) (7) (5) Fig.7 Collector current as a function of collector-emitter voltage; typical values. (1) I B = 4.6 mA. (2) I B = 4.14 mA. (3) I B = 3.68 mA. (4) I B = 3.22 mA. (5) I B = 2.76 mA. (6) I B = 2.3 mA. (7) I B = 1.84 mA. (8) I B = 1.38 mA. (9) I B = 0.92 mA. (10) IB = 0.46 mA. TR1 (NPN) Tamb = 25 °C.
2005 Jan 11 7
NXP Semiconductors Product data sheet handbook, halfpage 400 600 200 MLD649 −10−1 −1 −10 IC (mA) hFE −102 −103 (2) (1) (3) Fig.8 DC current gain as a function of collector current; typical values. TR2 (PNP) VCE = −2 V. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage −200 −1200 −400 −600 −800 −1000 MLD651 −1−10−1 IC (mA) VBE (mV) −10 −102 −103 (1) (3) (2) Fig.9 Base-emitter voltage as a function of collector current; typical values. TR2 (PNP) VCE = −2 V. (1) T amb = −55 °C. (2) T amb = 25 °C. (3) T amb = 150 °C. handbook, halfpage −103 −102 −10 MLD653 −10−1 −1 −10 IC (mA) VCEsat (mV) −102 −103 (1)(2) (3) Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. TR2 (PNP) IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage −200 −1200 −400 −600 −800 −1000 MLD652 −1−10−1 IC (mA) VBEsat (mV) −10 −102 −103 (2) (3) (1) Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. TR2 (PNP) IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C.
2005 Jan 11 8
NXP Semiconductors Product data sheet handbook, halfpage 103 102 10−1 MLD654 −10−1 −1 −10 IC (mA) RCEsat (Ω) −102 −103 (1) (3)(2) Fig.12 Equivalent on-resistance as a function of collector current; typical values. TR2 (PNP) IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage (1)(2)(3)(4) (5) (6) (7) (8) (10) IC (mA) VCE (V) −1200 −800 −400 MLD650 (9) Fig.13 Collector current as a function of collector-emitter voltage; typical values. (1) I B = −7 mA. (2) I B = −6.3 mA. (3) I B = −5.6 mA. (4) I B = −4.9 mA. (5) I B = −4.2 mA. (6) I B = −3.5 mA. (7) I B = −2.8 mA. (8) I B = −2.1 mA. (9) I B = −1.4 mA. (10) IB = −0.7 mA. TR2 (PNP) Tamb = 25 °C.
2005 Jan 11 9
NXP Semiconductors Product data sheet mm 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 0.5 e 1.0 1.7 1.5 0.1 y 0.1 DIMENSIONS (mm are the original dimensions) 0.3 0.1 SOT666 bp pin 1 index D e A Lp detail X HE EA S 0 1 2 mm scale A 0.6 0.5 c X 123 456 Plastic surface-mounted package; 6 leads SOT66 6 YS w M A
2005 Jan 11 10
NXP Semiconductors Product data sheet
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