PBSS2515M NEXPERIA | Alldatasheet

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Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

Supersedes data of 2003 Jun 17

2003 Sep 15

15 V, 0.5 A NPN low VCEsat (BISS) transistor M3D883 BOTTOM VIEW

2003 Sep 15 2

NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M

FEATURES

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency leading to reduced heat generation
  • Reduced printed-circuit board requirements.

APPLICATIONS

  • Power management: – DC-DC converter – Supply line switching – Battery charger – LCD backlighting.
  • Peripheral driver: – Driver in low supply voltag e applications (e.g. lamps and LEDs) – Inductive load drivers (e.g. relays, buzzers and motors).

DESCRIPTION

Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3515M. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector handbook, halfpage MAM475 Bottom view Fig.1 Simplified outline (SOT883) and symbol. MARKING TYPE NUMBER MARKING CODE PBSS2515M S2 QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VCEO collector-emitter voltage 15 V IC collector current (DC) 500 mA ICM peak collector current 1 A RCEsat equivalent on-resistance <500 mΩ

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NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single -sided copper, tinplated, standard footprint, with 60 μm copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS Notes 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single -sided copper, tinplated, standard footprint, with 60 μm copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 4. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms. Soldering Reflow soldering is the only recommended soldering method. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) notes 1 and 2 − 500 mA ICM peak collector current − 1 A IBM peak base current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; notes 1 and 2 − 250 mW Tamb ≤ 25 °C; note 1 and 3 − 430 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air; notes 1 and 2 500 K/W in free air; notes 1, 3 and 4 290 K/W

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NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: t p ≤ 300 μs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 15 V; IE = 0 − − 100 nA VCB = 15 V; IE = 0; Tj = 150 °C − − 50 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 2 V; IC = 10 mA 200 − − VCE = 2 V; IC = 100 mA; note 1 150 − − VCE = 2 V; IC = 500 mA; note 1 90 − − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 25 mV IC = 200 mA; IB = 10 mA; note 1 − − 150 mV IC = 500 mA; IB = 50 mA; note 1 − − 250 mV RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 − 360 <500 mΩ VBEsat base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 − − 1.1 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 100 mA; note 1 − − 0.9 V fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 250 420 − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − 4.4 6 pF

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NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M handbook, halfpage 400 600 200 MLE098 10−1 11 0 IC (mA) hFE 102 103 (2) (1) (3) Fig.2 DC current gain as a function of collector current; typical values. VCE = 2 V. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage 200 1200 400 600 800 1000 MLE100 110−1 IC (mA) VBE (mV) 10 10 2 103 (1) (3) (2) Fig.3 Base-emitter voltage as a function of collector current; typical values. VCE = 2 V. (1) T amb = −55 °C. (2) T amb = 25 °C. (3) T amb = 150 °C. handbook, halfpage 103 102 MLE102 10−1 11 0 IC (mA) VCEsat (mV) 102 103 (1) (3) (2) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage 200 1200 400 600 800 1000 MLE101 110−1 IC (mA) VBEsat (mV) 10 10 2 103 (3) (2) (1) Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C.

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NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M handbook, halfpage 0 0.5 1 VCE (V) IC (A) 0.8 1.5 0.6 0.4 0.2 MLE099 (1) (9) (8) (7) (6) (4) (10) (5) (2)(3) Fig.6 Collector current as a function of collector-emitter voltage; typical values. (1) I B = 7 mA. (2) I B = 6.3 mA. (3) I B = 5.6 mA. (4) I B = 4.9 mA. (5) I B = 4.2 mA. (6) I B = 3.5 mA. (7) I B = 2.8 mA. (8) I B = 2.1 mA. (9) I B = 1.4 mA. (10) IB = 0.7 mA. Tamb = 25 °C. handbook, halfpage 102 10−1 MLE103 10−1 11 0 IC (mA) RCEsat (Ω) 102 103 (2) (1) (3) Fig.7 Collector-emitter equivalent on-resistance as a function of collector current; typical values. IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C.

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NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M PACKAGE OUTLINE UNIT A1 max.A(1) bb 1 e1eL L 1 REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.50 0.46 0.20 0.12 0.55 0.470.03 0.62 0.55 0.35 0.65 DIMENSIONS (mm are the original dimensions) Note 1. Including plating thickness 0.30 0.22 0.30 0.22 SOT883 SC-101 03-02-05 03-04-03 DE 1.02 0.95 L E b A D 0 0.5 1 mm scale Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT88 3 e

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NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Printed in The Netherlands R75/03/pp9 Date of release: 2003 Sep 15 Document order number: 9397 750 11782