PBMB75A6 NIEC | Alldatasheet
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IGBT MODULE MODULE MODULE MODULE HHHH----Bridge 75A 600VBridge 75A 600VBridge 75A 600VBridge 75A 600V PBMB75A6PBMB75A6PBMB75A6PBMB75A6 C I R C U I T O U T L I N E D R A W I N G MAXMUM RATINGS (Tc=25°C) Item Symbol PBMB75A6 Unit Collector-Emitter Voltage V CES 600 V Gate - Emitter Voltage V GES +/ - 20 V DC I C 75 Collector Current 1 ms I CP 150 A Collector Power Dissipation P C 320 W Junction Temperature Range T j -40 to +150 °C Storage Temperature Range T stg -40 to +125 °C Isolation Voltage Terminal to Base AC, 1 min.) V ISO 2500 V Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals FTOR 2 N •m ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter Cut-Off Current I CES V CE=600V,VGE=0V - - 1.0 mA Gate-Emitter Leakage Current I GES V GE=+/- 20V,VCE=0V - - 1.0 µA Collector-Emitter Saturation Voltage V CE(sat) I C=75A,VGE=15V - 2.1 2.6 V Gate-Emitter Threshold Voltage V GE(th) V CE=5V,IC=75mA 4.0 - 8.0 V Input Capacitance Cies V CE=10V,VGE=0V,f=1MHz - 7,500 - pF Rise Time t r - 0.15 0.3 Turn-on Time t on - 0.25 0.4 Fall Time t f - 0.2 0.35 Switching Time Turn-off Time t off VCC= 300V RL= 4 ohm RG= 10 ohm µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Unit DC I F 75 Forward Current 1 ms I FM 150 A Characteristic Symbol Test Condition Min. Typ. Max. Unit Peak Forward Voltage V F I F=75A,VGE=0V - 1.9 2.4 V Reverse Recovery Time t rr IF=75A,VGE=-10V,di/dt=75A/µs - 0.15 0.25 µs THERMAL CHARACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit IGBT - - 0.38 Thermal Impedance DIODE Rth(j-c) Junction to Case - - 0.80 °C/W 8- fasten- tab No 110 Dimension(mm) Approximate Weight : 430g
Collector to Emitter Voltage V CE (V) Collector Current I C (A) Fig.1- Output Characteristics (Typical) TC=25 ℃ 10V 12V 15V VGE=20V 0 4 8 1 21 62 00 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 ℃ 75A IC=30A 150A 0 4 8 12 16 200 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=125 ℃ 75A IC=30A 150A 0 75 150 225 300 100 150 200 250 300 350 400 Total Gate Charge Qg (nC) Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage V GE (V) Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) VCE=300V 200V 100V RL=4Ω TC=25 ℃ 0.2 0.5 1 2 5 10 20 50 100 20050 100 200 500 1000 2000 5000 10000 20000 50000 Collector to Emitter Voltage V CE (V) Capacitance C (pF) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) VGE=0V f=1MHZ TC=25 ℃ Coes Cres Cies 0 2 04 06 08 00 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector Current I C (A) Switching Time t (μs) Fig.6- Collector Current vs. Switching Time (Typical) toff VCC=300V RG=10 Ω VGE=±15V TC=25 ℃ ton tr tf
1 10 1000.05 0.1 0.2 0.5 Series Gate Impedance R G (Ω) Switching Time t (μs) Fig.7- Series Gate Impedance vs. Switching Time (Typical) VCC=300V IC=75A VG=±15V TC=25 ℃ tf tr ton toff 012340 100 125 150 Forward Voltage V F (V) Forward Current I F (A) Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) TC=25 ℃ TC=125 ℃ 0 100 200 300 400 500 6005 100 200 500 -di/dt (A/μs) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) Fig.9- Reverse Recovery Characteristics (Typical) IRrM trr IF=75A TC=25 ℃ 0 200 400 600 8000.1 0.2 0.5 100 200 500 Collector to Emitter Voltage V CE (V) Collector Current I C (A) Fig.10- Reverse Bias Safe Operating Area (Typical) RG=10 Ω VGE=±15V TC≦125 ℃ 10-5 10-4 10-3 10-2 10-1 11 0 11x10 -3 2x10 -3 5x10 -3 1x10 -2 2x10 -2 5x10 -2 1x10 -1 2x10 -1 5x10 -1 Time t (s) Transient Thermal Impedance Rth (J-C) (℃/W) Fig.11- Transient Thermal Impedance TC=25 ℃