PBLS2004D

PBLS2004D NEXPERIA | Alldatasheet

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Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

1. Product profile

1.1 General description

PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package.

1.2 Features

■ Low VCEsat (BISS) and resistor-equipped transistor in one package ■ Low threshold voltage (< 1 V) compared to MOSFET ■ Low drive power required ■ Space-saving solution ■ Reduction of component count

1.3 Applications

■ Supply line switches ■ Battery charger switches ■ High-side switches for LEDs, drivers and backlights ■ Portable equipment

1.4 Quick reference data

[1] Pulse test: tp ≤ 300 µs;δ≤ 0.02. PBLS2004D

20 V PNP BISS loadswitch

Rev. 01 — 23 June 2005 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor VCEO collector-emitter voltage open base - - −20 V IC collector current (DC) - - −1A R CEsat collector-emitter saturation resistance IC = −1A ; IB = −100 mA [1] - 185 280 m Ω TR2; NPN resistor-equipped transistor VCEO collector-emitter voltage open base - - 50 V IO output current - - 100 mA R1 bias resistor 1 (input) 15.4 22 28.6 k Ω R2/R1 bias resistor ratio 0.8 1 1.2

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 2 of 16 Philips Semiconductors PBLS2004D

1. Pinning information 3. Ordering information 4. Marking 5. Limiting values Table 2: Pinning Pin Description Simplified outline Symbol 1 emitter TR1 2 base TR1 3 output (collector) TR2

4 GND (emitter) TR2

5 input (base) TR2 6 collector TR1 13 2 456 65 4 1 23 TR1 TR2 sym036 Table 3: Ordering information Type number Package Name Description Version PBLS2004D SC-74 plastic surface mounted package; 6 leads SOT457 Table 4: Marking codes Type number Marking code PBLS2004D F9 Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1; PNP low VCEsat transistor VCBO collector-base voltage open emitter - −20 V VCEO collector-emitter voltage open base - −20 V VEBO emitter-base voltage open collector - −5V IC collector current (DC) - −1A ICM peak collector current t p ≤ 300 µs- −2A IB base current (DC) - −0.3 A IBM peak base current t p ≤ 300 µs- −0.6 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW [2] - 350 mW [3] - 400 mW

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 3 of 16 Philips Semiconductors PBLS2004D [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O 3, standard footprint. TR2; NPN resistor-equipped transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +40 V negative - −10 V I O output current - 100 mA ICM peak collector current t p ≤ 300 µs - 100 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 200 mW Per device P tot total power dissipation [1] - 400 mW [2] - 530 mW [3] - 600 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C (1) Ceramic PCB, Al2O 3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tamb (°C) 0 160 12040 80 006aaa414 0.4 0.2 0.6 0.8 Ptot (W) (1) (2) (3)

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 4 of 16 Philips Semiconductors PBLS2004D

1. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O 3, standard footprint. Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device R th(j-a) thermal resistance from junction to ambient in free air [1] - - 315 K/W [2] - - 236 K/W [3] - - 210 K/W FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa415 102 103 Zth(j-a) (K/W) 10−1 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 duty cycle = 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 5 of 16 Philips Semiconductors PBLS2004D FR4 PCB, mounting pad for collector 1 cm2 Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values Ceramic PCB, Al2O 3, standard footprint Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa463 102 103 Zth(j-a) (K/W) 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 0.75 0.5 0.33 0.2 0.1 δ = 1 0.05 0.02 0.01 006aaa464 102 103 Zth(j-a) (K/W) 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 0.75 0.5 0.33 0.2 0.1 δ = 1 0.05 0.02 0.01

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 6 of 16 Philips Semiconductors PBLS2004D

1. Characteristics Table 7: Characteristics Tamb =2 5°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor ICBO collector-base cut-off current VCB = −20 V; IE =0A - - −0.1 µA VCB = −20 V; IE =0A ; Tj= 150°C -- −50 µA ICES collector-emitter cut-off current VCE = −20 V; VBE =0V - - −0.1 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −0.1 µA hFE DC current gain V CE = −2 V; IC = −1 mA 220 495 - VCE = −2 V; IC = −100 mA 220 440 - VCE = −2 V; IC = −500 mA [1] 220 310 - VCE = −2 V; IC = −1A [1] 155 220 - VCE = −2 V; IC = −2A [1] 60 120 - VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −1m A - −55 −90 mV IC = −500 mA; IB = −50 mA [1] - −100 −150 mV IC = −1 A; IB = −50 mA [1] - −200 −300 mV IC = −1 A; IB = −100 mA [1] - −185 −280 mV R CEsat collector-emitter saturation resistance IC = −1 A; IB = −100 mA [1] - 185 280 m Ω VBEsat base-emitter saturation voltage VBEon base-emitter turn-on voltage td delay time I C = −1 A; IBon = −50 mA; IBoff=5 0m A -8 - n s tr rise time - 34 - ns ton turn-on time - 42 - ns ts storage time - 140 - ns tf fall time - 45 - ns toff turn-off time - 185 - ns fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 150 185 - MHz C c collector capacitance VCB = −10 V; IE =ie =0A ; f=1M H z -1 5 2 0 p F

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 7 of 16 Philips Semiconductors PBLS2004D [1] Pulse test: tp ≤ 300 µs;δ≤ 0.02. TR2; NPN resistor-equipped transistor ICBO collector-base cut-off current VCB =5 0V ; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE =3 0V ; IB =0A - - 1 µA VCE =3 0V ; IB =0A ; Tj= 150°C -- 5 0 µA IEBO emitter-base cut-off current VEB =5V ; IC = 0 A - - 180 µA hFE DC current gain V CE =5V ; IC = 5 mA 60 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE =5V ; IC = 100µA - 1.1 0.8 V VI(on) on-state input voltage VCE = 0.3 V; IC = 5 mA 2.5 1.7 - V R1 bias resistor 1 (input) 15.4 22 28.6 k Ω R2/R1 bias resistor ratio 0.8 1 1.2 C c collector capacitance VCB =1 0V ; IE =ie =0A ; f=1M H z - - 2.5 pF Table 7: Characteristics …continued Tamb =2 5°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 8 of 16 Philips Semiconductors PBLS2004D VCE = −2V (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Fig 5. TR1 (PNP): DC current gain as a function of collector current; typical values Fig 6. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values VCE = −5V (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C IC /IB =2 0 (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C Fig 7. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 8. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values 006aaa416 400 600 200 800 1000 hFE IC (mA) (1) (2) (3) 006aaa417 −10−1 −10−2 VCEsat (V) −10−3 IC (mA) (1) (2) (3) 006aaa418 −0.6 −0.4 −0.8 −1.0 VBE (V) −0.2 IC (mA) (1) (2) (3) 006aaa419 −0.6 −0.8 −0.4 −1.0 −1.2 VBEsat (V) −0.2 IC (mA) (1) (2) (3)

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 9 of 16 Philips Semiconductors PBLS2004D Tamb =2 5°CI C /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Fig 9. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values Fig 10. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Fig 11. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 12. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 006aaa420 VCE (V) −0 −6−4−2 −0.8 −1.2 −0.4 −1.6 −2.0 IC (A) IB = −13 mA −10.4 mA −11.7 mA −9.1 mA −6.5 mA −3.9 mA −5.2 mA −2.6 mA −1.3 mA −7.8 mA 006aaa421 102 R CEsat (Ω ) 10−1 IC (mA) (1) (2) (3) 006aaa422 −10−1 −10−2 VCEsat (V) −10−3 IC (mA) (1) (2) (3) 006aaa423 IC (mA) 102 103 R CEsat (Ω ) 10−1 (1) (2) (3)

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 10 of 16 Philips Semiconductors PBLS2004D VCE =5V (1) Tamb = 150°C (2) Tamb =2 5°C (3) Tamb = −40 °C IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −40 °C Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values Fig 14. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values VCE = 0.3 V (1) Tamb = −40 °C (2) Tamb =2 5°C (3) Tamb = 100°C VCE =5V (1) Tamb = −40 °C (2) Tamb =2 5°C (3) Tamb = 100°C Fig 15. TR2 (NPN): On-state input voltage as a function of collector current; typical values Fig 16. TR2 (NPN): Off-state input voltage as a function of collector current; typical values IC (mA) 10-1 102101 006aaa038 102 103 hFE (1) (2) (3) 006aaa039 IC (mA) 11 0 210 10-1 VCEsat (V) 10-2 (1) (2) (3) 006aaa040 IC (mA) 10−1 102101 VI(on) (V) 10−1 (1) (2) (3) 006aaa041 IC (mA) 10−1 102101 VI(off) (V) 10−1 (1) (3) (2)

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 11 of 16 Philips Semiconductors PBLS2004D

1. Test information Fig 17. BISS transistor switching time definition IC = −1 A; IBon = −50 mA; IBoff= 50 mA; R1 = open; R2 = 45Ω ; RB = 145Ω ; RC =1 0Ω Fig 18. Test circuit for switching times 006aaa266 −IBon (100 %) −IB input pulse (idealized waveform) −IBoff 90 % 10 % −IC (100 %) −IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff R C DUT mgd624 Vo R B (probe) 450 W (probe)

450 Woscilloscope oscilloscope

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 12 of 16 Philips Semiconductors PBLS2004D

1. Package outline 10. Packing information [1] For further information and the availability of packing methods, seeSection17. [2] T1: normal taping [3] T2: reverse taping Fig 19. Package outline SOT457 (SC-74) 04-11-08Dimensions in mm 3.0 2.5 1.7 1.3 3.1 2.7 pin 1 index 1.9 0.26 0.10 0.40 0.250.95 1.1 0.9 0.6 0.2 13 2 456 Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PBLS2004D SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 13 of 16 Philips Semiconductors PBLS2004D

1. Soldering Dimensions in mm Fig 20. Reflow soldering footprint Dimensions in mm Fig 21. Wave soldering footprint solder lands solder resist occupied area solder paste 0.95 2.825 0.45 0.55 1.60 1.95 3.45 1.70 3.10 3.20 3.30 msc422 1.40 4.30 5.30 0.45 MSC423 1.45 4.455.05 solder lands solder resist occupied area solder paste

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 14 of 16 Philips Semiconductors PBLS2004D

1. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBLS2004D_1 20050623 Product data sheet - - -

Philips Semiconductors PBLS2004D PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01.00 — 23 June 2005 15 of 16 13. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 15. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 16. Trademarks Notice —All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).

© Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 June 2005 Document ID: PBLS2004D_1 Published in The Netherlands Philips Semiconductors PBLS2004D

1. Contents