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PBLS2001S NEXPERIA | Alldatasheet

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Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

1.1 General description

1.2 Features

1.3 Applications

1.4 Quick reference data

20 V PNP BISS loadswitch

Table 1. Quick reference data

2 GND (emitter) TR2

Table 3. Ordering information Table 4. Marking codes

PBLS2001S_2 © NXP B.V. 2009. All rights reserved. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al2O 3, standard footprint. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).

PBLS2001S_2 © NXP B.V. 2009. All rights reserved. [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al2O 3, standard footprint. Table 6. Thermal characteristics

PBLS2001S_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 August 2009 5 of 16 NXP Semiconductors PBLS2001S FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values FR4 PCB, mounting pad for collector 1cm2 Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa809 102 103 Zth(j-a) (K/W) 10−1 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 1.0 duty cycle = 006aaa810 102 103 Zth(j-a) (K/W) 10−1 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 duty cycle = 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 1.0

PBLS2001S_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 August 2009 8 of 16 NXP Semiconductors PBLS2001S VCE = −2V (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Tamb =2 5°C Fig 5. TR1 (PNP): DC current gain as a function of collector current; typical values Fig 6. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values VCE = −2V (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C IC /IB =2 0 (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C Fig 7. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 8. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values 006aaa800 400 200 600 800 hFE IC (mA) (1) (2) (3) VCE (V) 006aaa801 IC (A) IB (mA) = −18.0 −22.5 −27.0 −31.5 −36.0 −40.5 −45.0 −13.5 −9.0 −4.5 006aaa802 -0.5 -0.7 -0.3 -0.9 -1.1 VBE (V) -0.1 IC (mA) (1) (2) (3) 006aaa803 -0.5 -0.7 -0.3 -0.9 -1.1 VBEsat (V) -0.1 IC (mA) (1) (2) (3)

PBLS2001S_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 August 2009 9 of 16 NXP Semiconductors PBLS2001S IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Fig 9. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 10. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Fig 11. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 006aaa804 -10-1 -10-2 VCEsat (V) -10-3 IC (mA) (1) (2) (3) 006aaa805 -10-1 -10-2 VCEsat (V) -10-3 IC (mA) (1) (2) (3) 006aaa806 10-1 R CEsat (W ) 10-2 IC (mA) (1) (2) (3) 006aaa807 IC (mA) 10-1 102 R CEsat (W ) 10-2 (1) (2) (3)

PBLS2001S_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 August 2009 10 of 16 NXP Semiconductors PBLS2001S VCE =5V (1) Tamb = 150°C (2) Tamb =2 5°C (3) Tamb = −40 °C IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −40 °C Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values Fig 14. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values VCE = 0.3 V (1) Tamb = −40 °C (2) Tamb =2 5°C (3) Tamb = 100°C VCE =5V (1) Tamb = −40 °C (2) Tamb =2 5°C (3) Tamb = 100°C Fig 15. TR2 (NPN): On-state input voltage as a function of collector current; typical values Fig 16. TR2 (NPN): Off-state input voltage as a function of collector current; typical values IC (mA) 10−1 102101 006aaa015 102 103 hFE (3) (2) (1) IC (mA) 11 0 210 006aaa014 102 103 VCEsat (mV) (1) (3) (2) IC (mA) 10−1 102101 006aaa016 102 VI(on) (V) 10−1 (1) (3) (2) 006aaa017 IC (mA) 10−2 10110−1 VI(off) (V) 10−1 (1) (2) (3)

Test information Fig 17. BISS transistor switching time deﬁnition IC = −2 A; IBon = −100 mA; IBoff= 100 mA; R1 = open; R2 = 25Ω ; RB =7 0Ω ; RC =5 Ω Fig 18. Test circuit for switching times 006aaa266 −IBon (100 %) −IB input pulse (idealized waveform) −IBoff 90 % 10 % −IC (100 %) −IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff R C DUT mgd624 Vo R B (probe) 450 W (probe)

450 Woscilloscope oscilloscope

Soldering Fig 20. Reﬂow soldering footprint SOT96-1 (SO8) Fig 21. Wave soldering footprint SOT96-1 (SO8) sot096-1_froccupied area solder lands Dimensions in mmplacement accuracy – 0.25 1.30 0.60 (8·) 1.27 (6·) 4.00 6.60 5.50 7.00 sot096-1_fw solder resist occupied area solder lands Dimensions in mm board direction placement accurracy – 0.25 4.00 5.50 1.30 0.3 (2·)0.60 (6·) 1.20 (2·) 1.27 (6·) 7.006.60 enlarged solder land

This data sheet was changed to reﬂect the new company name NXP Semiconductors, including new legal deﬁnitions and disclaimers. No changes were made to the technical content. PBLS2001S_1 20060803 Product data sheet - -

Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

13.2 Deﬁnitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. Limiting values —Stress above one or more limiting values (as deﬁned in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/proﬁle/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control —This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data —The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit:http://www.nxp.com For sales ofﬁce addresses, please send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Deﬁnition Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors PBLS2001S © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 August 2009 Document identifier: PBLS2001S_2 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 15. Contents

Product Information

PBLS2001S specifications and overview.

Summary

20 V PNP BISS loadswitch Rev. 02 - 24 August 2009

Description

20 V PNP BISS loadswitch Rev. 02 - 24 August 2009

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