PBF203 NIEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
ç ç THYRISTOR MODULE Maximum Ratings Approx Net Weight:70g Grade ParameterParameterParameterParameter Symbol PBF203 PBF206 PBF208 Unit Repetitive Peak Off-State Voltage VDRM 300 600 800 Non Repetitive Peak Off-State Voltage VDSM 400 700 960 V Repetitive Peak Reverse Voltage VRRM 300 600 800 Non Repetitive Peak Reverse Voltage VRSM 400 700 960 V Parameter Parameter Parameter Parameter ConditionsConditionsConditionsConditions Max RatedMax RatedMax RatedMax Rated Value Value Value Value Unit Average Rectified Output Current I O(AV) 50Hz Half Sine Wave condition Tc=60°C 20 A Surge On-State Current I TSM 50 Hz Half Sine Wave,1Pulse, Non-Repetitive 160 A I Squared t I 2t 2msec to 10msec 128 A 2s Critical Rate of Turned-On Current di/dt VD=2/3VDRM, I TM=2•IO, Tj=125 °C IG=100mA, diG/dt=0.2A/µs 100 A/µs Peak Gate Power P GM 5 W Average Gate Power P G(AV) 0.5 W Peak Gate Current I GM 2 A Peak Gate Voltage V GM 10 V Peak Gate Reverse Voltage V RGM 5 V Operating JunctionTemperature Range Tjw -40 to +125 °C Storage Temperature Range Tstg -40 to +125 °C Isoration Voltage Viso Base Plate to Terminals, AC1min 2000 V Case mounting M5 Screw 2.4 to 2.8Mounting torque Terminals Ftor - - N•m Value per 1 Arm
FEATURES
- Isolated Base * Thyristors and Diodes H-Bridge Circuit With Free-Wheeling Diode * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use OUTLINE DRAWING 20A / 300V to 800V ç PBF203 PBF206 PBF208PBF203 PBF206 PBF208PBF203 PBF206 PBF208PBF203 PBF206 PBF208 φ ç
ç ç Electrical • Thermal Characteristics Maximum Value. Characteristics Symbol Test Conditions Min. Typ. Max. Unit Peak Off-State Current IDM VDM= V DRM, Tj= 125 °C 5 mA Peak Reverse Current IRM VRM= V RRM, Tj= 125 °C 5 mA Peak Forward Voltage VTM ITM= 30A, Tj=25 °C 1.63 V Tj=-40°C 100 Tj=25°C 50 Gate Current to Trigger I GT V D=6V,IT=1A Tj=125°C 25 mA Tj=-40°C 4 Tj=25°C 2.5 Gate Voltage to Trigger V GT V D=6V,IT=1A Tj=125°C 2 V Gate Non-Trigger Voltage V GD VD=2/3VDRM Tj=125 °C 0.25 V Critical Rate of Rise of Off-State Voltage dv/dt VD=2/3VDRM Tj=125 °C 100 V/µs Turn-Off Time tq ITM=IO,VD=2/3VDRM dv/dt=20V/µs, V R=100V -di/dt=20A/µs, Tj=125°C 80 µs Turn-On Time tgt 6 µs Delay Time td 2 µs Rise Time tr VD=2/3VDRM Tj=125 °C IG=100mA, diG/dt=0.2A/µs 4 µs Latching Current I L Tj=25°C 70 mA Holding Current I H Tj=25°C 50 Rth(j-c) Junction to Case 1.1 Thermal Resistance *1 Rth(c-f) Base Plate to Heat Sink with Thermal Compound 0.1 °C/W Value Per 1Arm *1:Value Per Module
ç ç PBF20x OUTLINE DRAWING (Dimensions in mm) φ