SPI47N10L_02 INFINEON | Alldatasheet
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Preliminary data SPI47N10L SPP47N10L,SPB47N10L SIPMOS Power-Transistor Product Summary VDS 100 V RDS(on) 26 m/G01 ID 47 A Feature /G01 N-Channel /G01 Enhancement mode /G01 Logic Level /G01/G02 175°C operating temperature /G01 Avalanche rated /G01 dv/dt rated P-TO263-3-2 P-TO220-3-1P-TO262-3-1 Marking 47N10L 47N10L 47N10L Type Package Ordering Code SPP47N10L P-TO220-3-1 Q67040-S4177 SPB47N10L P-TO263-3-2 Q67040-S4176 SPI47N10L P-TO262-3-1 Q67060-S7432 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC =25°C TC =100°C ID A Pulsed drain current TC =25°C ID puls 188 Avalanche energy, single pulse ID=47 A , VDD =25V, RGS =25/G01 EAS 400 mJ Avalanche energy, periodic limited by Tjmax EAR 17.5 Reverse diode dv/dt IS=47A, VDS =0V, di/dt=200A/µs dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC =25°C Ptot 175 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56
Preliminary data SPI47N10L SPP47N10L,SPB47N10L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thJC - - 0.85 K/W Thermal resistance, junction - ambient, leaded R thJA - - 62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area F) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS =0V, ID=2mA V(BR)DSS 100 - - V Gate threshold voltage, VGS = VDS ID = 2 mA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS =100V, VGS =0V, Tj=25°C VDS =100V, VGS =0V, Tj=150°C IDSS 0.1 100 µA Gate-source leakage current VGS =20V, VDS =0V IGSS - 10 100 nA Drain-source on-state resistance VGS =4.5V, ID=33A RDS(on) - 25 40 m/G01 Drain-source on-state resistance VGS =10V, ID=33A RDS(on) - 18 26 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
Preliminary data SPI47N10L SPP47N10L,SPB47N10L Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS /G01 2*ID*RDS(on)max , ID=33A 18 36 - S Input capacitance Ciss VGS =0V, VDS =25V, f=1MHz - 2000 2500 pF Output capacitance Coss - 375 470 Reverse transfer capacitanceCrss - 210 265 Turn-on delay time td(on) VDD =50V, VGS =4.5V, ID=47A, RG =2/G02 - 50 75 ns Rise time tr - 100 150 Turn-off delay time td(off) - 50 75 Fall time tf - 70 105 Gate Charge Characteristics Gate to source charge Q gs VDD =80V, ID=47A - 8 12 nC Gate to drain charge Q gd - 16 24 Gate charge total Qg VDD =80V, ID=47A, VGS =0 to 10V - 90 135 Gate plateau voltage V(plateau) VDD =80V, ID=47A - 3.38 - V Reverse Diode Inverse diode continuous forward current IS TC =25°C - - 47 A Inverse diode direct current, pulsed ISM - - 188 Inverse diode forward voltage VSD VGS =0V, IF =94A - 1.1 1.5 V Reverse recovery time trr VR =50V, IF =lS , diF /dt=100A/µs - 80 120 ns Reverse recovery charge Q rr - 340 510 nC
Preliminary data SPI47N10L SPP47N10L,SPB47N10L
1 Power dissipation
Ptot = f (TC ) 0 20 40 60 80 100 120 140 160 °C 190 TC 100 120 140 160 W 190 SPP47N10L Ptot
2 Drain current
ID = f (TC ) parameter: VGS/G01 10 V 0 20 40 60 80 100 120 140 160 °C 190 TC A SPP47N10L ID
3 Safe operating area
ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 -1 10 0 10 1 10 2 10 3 V VDS 0 10 1 10 2 10 3 10 A SPP47N10L ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs 10 µs tp = 7.1µs
4 Transient thermal impedance
ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W SPP47N10L ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50
Preliminary data SPI47N10L SPP47N10L,SPB47N10L 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs 0 1 2 3 4 V 5.5 VDS 100 A 120 SPP47N10L ID VGS [V] a a 2.5 b b 3.0 c c 3.5 d d 4.0e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l Ptot = 175W l 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 10 20 30 40 50 60 70 80 A 100 ID 100 110 m/G01 130 SPP47N10L RDS(on) VGS [V] = b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l l 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS/G01 2 x ID x RDS(on)max parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS A ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 10 20 30 40 A 55 ID S gfs
Preliminary data SPI47N10L SPP47N10L,SPB47N10L
9 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 33 A, VGS = 4.5 V -60 -20 20 60 100 140 °C 200 Tj 100 120 140 m/G01 170 SPP47N10L RDS(on) typ 98%
10 Gate threshold voltage
VGS(th) = f (Tj) parameter: VGS = VDS, ID = 2 mA -60 -20 20 60 100 140 °C 200 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 2.4 V VGS(th) min typ max 11 Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 0 5 10 15 20 25 30 V 40 VDS 2 10 3 10 4 10 pF C C iss C oss C rss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs VSD 0 10 1 10 2 10 3 10 A SPP47N10L IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 175 °C typ Tj = 175 °C (98%)
Preliminary data SPI47N10L SPP47N10L,SPB47N10L 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 47 A , VDD = 25 V, R GS = 25 /G02 25 45 65 85 105 125 145 °C 185 Tj 120 160 200 240 280 320 mJ 400 EAS 14 Typ. gate charge VGS = f (QGate) parameter: ID = 47 A pulsed 0 20 40 60 80 100 120 nC 150 QGate V SPP47N10L VGS 0,8 VDS max DS maxV0,2
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj 100 102 104 106 108 110 112 114 V 120 SPP47N10L V (BR)DSS
Preliminary data SPI47N10L SPP47N10L,SPB47N10L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP47N10L, BSPB47N10L and BSPI47N10L, for simplicity the device is referred to by the term SPP47N10L, SPB47N10L and SPI47N10L throughout this documentation