PB10S1 NIEC | Alldatasheet
Document overview
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Technical content
ç DIODE T ype:PB10S1,2,4,6 OUTLINE DRAWING Maximum Ratings Approx Net Weight:8.5g
FEATURES
- Surge Overload Rating : 150 Amperes Peak * Low Forward Voltage Drop * Mounting Position : Any SINGLE – PHASE SILICON BRIDGE RECTIFIER ç Rating Symbol PB10S1 PB10S2 PB10S4 PB10S6 Unit Repetitive Pe ak Re verse Vo ltage VRRM 100 200 400 600 V Non-repetitive Peak Reverse Voltage VRSM 120 240 480 680 V 10 Tc=102°C, With 200x200x1.5mm,Al-Fin Average Rectified Output Current IO 3.7 Ta=40°C, Without Fin A Surge Forward Current Per 1 Arm IFSM 150 50 Hz Half Sine Wave,1cycle Non-repetitive A Operating JunctionTemp erature R ange Tjw - 40 to + 150 °C Storage Temp erature R ange Tstg - 40 to + 150 °C Insuration Withstand Voltage Viso 1500 Terminal to Base, AC 1min. ç V Mounting torque Fw 0.5 Recommended value N•m Electrical • Thermal Characteristics Characteristics Symbol Conditions Min. Typ. Max. Unit Peak Reverse Current Per 1 Arm IRM Tj= 25 °C, V RM= V RRM - - 5 µA Peak Forward Voltage Per 1 Arm VFM Tj= 25 °C, I FM= 5A - - 1.0 V Thermal Resistance Rth(j-c) Junction to Case(total) - - 3.5 °C/W
ç PB10S1,2,4,6 OUTLINE DRAWING (Dimensions in mm) ç