PAT6012 NIEC | Alldatasheet
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ç ç THYRISTOR MODULE Maximum Ratings Approx Net Weight:155g Grade ParameterParameterParameterParameter Symbol PAT/PAH6012 PAT/PAH6016 Unit Repetitive Peak Off-State Voltage VDRM 1200 1600 Non Repetitive Peak Off-State Voltage VDSM 1300 1700 V Parameter Parameter Parameter Parameter ConditionsConditionsConditionsConditions Max RatedMax RatedMax RatedMax Rated Value Value Value Value Unit RMS On-State Current I T(RMS) 50Hz Half Sine Wave condition Tc=82°C 133 A Surge On-State Current I FSM 50 Hz Half Sine Wave,1Pulse Non-Repetitive 1200 A I Squared t I 2t 2msec to 10msec 7200 A 2s Critical Rate of Turned-On Current di/dt VD=2/3VDRM, I TM=2•IO, Tj=125 °C IG=200mA, diG/dt=0.2A/µs 100 A/µs Peak Gate Power P GM 5 W Average Gate Power P G(AV) 1 W Peak Gate Current I GM 2 A Peak Gate Voltage V GM 10 V Peak Gate Reverse Voltage V RGM 5 V Operating JunctionTemperature Range Tjw -40 to +125 °C Storage Temperature Range Tstg -40 to +125 °C Isoration Voltage Viso Base Plate to Terminals, AC1min 2500 V Case mounting M6 Screw 2.4 to 3.5Mounting torque Terminals Ftor M5 Screw 2.4 to 2.8 N•m Value per 1 Arm
FEATURES
- Isolated Base * Dual Thyristors or Thyristor and Diode Anti-Parallel Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * AC phase control * AC switch PAT6012 PAT601 6PAT6012 PAT601 6PAT6012 PAT601 6PAT6012 PAT601 6 PAH6012 PAH601 6PAH6012 PAH601 6PAH6012 PAH601 6PAH6012 PAH601 6 OUTLINE DRAWING 133A / 1200 to 1600V ç φ ç ç PAT PAH
ç ç Electrical • Thermal Characteristics Maximum Value. Characteristics Symbol Test Conditions Min. Typ. Max. Unit Peak Off-State Current IDM VDM= V DRM, Tj=125°C 30 mA Peak On-State Voltage VTM ITM= 180A, Tj=25 °C 1.45 V Tj=-40°C 200 Tj=25°C 100 Gate Current to Trigger I GT V D=6V,IT=1A Tj=125°C 50 mA Tj=-40°C 4 Tj=25°C 2.5 Gate Voltage to Trigger V GT V D=6V,IT=1A Tj=125°C 2 V Gate Non-Trigger Voltage V GD VD=2/3VDRM Tj=125 °C 0.25 V Critical Rate of Rise of Off-State Voltage dv/dt VD=2/3VDRM Tj=125 °C 500 V/µs Turn-Off Time tq ITM=IO,VD=2/3VDRM dv/dt=20V/µs, V R=100V -di/dt=20A/µs, Tj=125°C 100 µs Turn-On Time tgt 6 µs Delay Time td 2 µs Rise Time tr Tj=25°C, ITM=IT(RMS) VD=100V, IG=200mA diG/dt=0.2A/µs 4 µs Latching Current I L Tj=25°C 100 mA Holding Current I H Tj=25°C 50 Rth(j-c) Junction to Case 0.25 Thermal Resistance *1 Rth(c-f) Base Plate to Heat Sink with Thermal Compound 0.1 °C/W Value Per 1Arm *1: Value Per Module
ç ç PAT/PAH601x OUTLINE DRAWING (Dimensions in mm) φ ç