PAT10012 NIEC | Alldatasheet

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Technical content

Maximum Ratings Approx Net Weight:155g Grade Parameter Parameter Parameter Parameter Symbol PAT/PAH10012 PAT/PAH10016 Unit Repetitive Peak Off-State Voltage VDRM 1200 1600 Non Repetitive Peak Off-State Voltage VDSM 1300 1700 V Parameter Parameter Parameter Parameter Conditions Conditions Conditions Conditions Max Rated Max Rated Max Rated Max Rated Value Value Value Value Unit RMS On-State Current IT(RMS) 50Hz Half Sine Wave condition Tc=76°C 222 A Surge On-State Current IFSM

50 Hz Half Sine Wave,1Pulse

A I Squared t I2t 2msec to 10msec 20000 A2s Critical Rate of Turned-On Current di/dt VD=2/3VDRM, ITM=2•IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs 100 A/µs Peak Gate Power PGM W Average Gate Power PG(AV) W Peak Gate Current IGM A Peak Gate Voltage VGM V Peak Gate Reverse Voltage VRGM V Operating JunctionTemperature Range Tjw -40 to +125 Storage Temperature Range Tstg -40 to +125 Isoration Voltage Viso Base Plate to Terminals, AC1min 2500 V Case mounting M6 Screw 2.4 to 3.5 Mounting torque Terminals Ftor M5 Screw 2.4 to 2.8 N•m Value per 1 Arm

FEATURES

  • Isolated Base * Dual Thyristors or Thyristor and Diode Anti-Parallel Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * AC phase control * AC switch P A T 1 0 0 1 2 P A T 1 0 0 1 6 P A T 1 0 0 1 2 P A T 1 0 0 1 6 P A T 1 0 0 1 2 P A T 1 0 0 1 6 P A T 1 0 0 1 2 P A T 1 0 0 1 6 P A H 1 0 0 1 2 P A H 1 0 0 1 6 P A H 1 0 0 1 2 P A H 1 0 0 1 6 P A H 1 0 0 1 2 P A H 1 0 0 1 6 P A H 1 0 0 1 2 P A H 1 0 0 1 6 OUTLINE DRAWING 222A / 1200 to 1600V φ PAT PAH

Electrical • Thermal Characteristics Maximum Value. Characteristics Symbol Test Conditions Min. Typ. Max. Unit Peak Off-State Current IDM VDM= VDRM, Tj=125°C mA Peak On-State Voltage VTM ITM= 300A, Tj=25°C 1.38 V Tj=-40°C 200 Tj=25°C 100 Gate Current to Trigger IGT VD=6V,IT=1A Tj=125°C mA Tj=-40°C Tj=25°C 2.5 Gate Voltage to Trigger VGT VD=6V,IT=1A Tj=125°C V Gate Non-Trigger Voltage VGD VD=2/3VDRM Tj=125°C 0.25 V Critical Rate of Rise of Off-State Voltage dv/dt VD=2/3VDRM Tj=125°C 500 V/µs Turn-Off Time tq ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C 100 µs Turn-On Time tgt µs Delay Time td µs Rise Time tr Tj=25°C, ITM=IT(RMS) VD=100V, IG=200mA diG/dt=0.2A/µs µs Latching Current IL Tj=25°C 100 mA Holding Current IH Tj=25°C Rth(j-c) Junction to Case 0.175 Thermal Resistance *1 Rth(c-f) Base Plate to Heat Sink with Thermal Compound 0.1 °C/W Value Per 1Arm *1: Value Per Module

PAT/PAH1001x OUTLINE DRAWING (Dimensions in mm) φ