P7N65S

P7N65S NIUHANG | Alldatasheet

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Technical content

Electronic Co. Ltd For Approval VOLTAGE CURRENT

• Low RDS(ON)
• Ultra Low Gate Charge
• RoHS and Halogen-Free Compliant
• 100% UIS and RG Tested
• Power factor correction（PFC）
• Switched mode power supplies(SMPS)
• Uninterruptible Power Supply（UPS） VD Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Note: 1.Ensure that the channel temperature does not exceed 150℃. 2.VDD=50V, Tch= 25℃(initial), L=0.5mH, Rg=25Ω. 3.The value of R θ JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design. Http://www.nhel.com.cn Data: 2014/10/20 Rev.:A/1 Page: 1 of 8 Qg 1.2 Ω 28 nC P7N65S Silicon 650V N-Channel MOSFET 650 Volts 7.0 Ampers TO-252 FEATURES Product Summary VDS ID RDS(on)@10V

APPLICATIONS

Gate:1,Drain:2,Source:3 Symbol Value Unit Drain-source voltage VDS 650 V EAS 230 mJ VGS ± 30 V IDM 28 A Power dissipation PD 80 W storage temperature T stg -55~150 °C Avalanche energy, single pulse (Note 2) Thermal Resistance Parameter Symbol Max Unit Thermal resistance, junction – case. RthJC 1.56 Thermal resistance, junction – ambient ((Note 3)) RthJA 60 ID A ℃/W Operating junction Tj 150 Drain Current-Pulsed Continuous drain current Gate-Source voltage Absolute maximum ratings Parameter

Electronic Co. Ltd For Approval Electrical characteristics (TA = 25 ℃, unless otherwise noted) Http://www.nhel.com.cn Data: 2014/10/20 Rev.:A/1 Page: 2 of 8 R DS(on) nS 80 - nS - 90 - nS Max. VGS=0V, ID=250uA 650 - - P7N65S Silicon 650V N-Channel MOSFET ■Static Characteristic Value Min. - 30 - Typ. V 2 3 4 V Drain-source on-state resistance BV DSS VDS=650V,VGS=0V - - 1 Gate threshold voltage V GS(th ) VDS=VGS,ID=250uA Drain-source breakdown voltage Gate-source leakage current I GSS VGS=± 30V,VDS=0V - - ± 100 nA VGS=10V, ID=3.5A - 1.2 1.5 pF mΩ ■Dynamic Characteristic Input Capacitance C iss - 955 - VDS=25V,VGS=0V, f=1.0MHzOutput Capacitance C oss - 135 - Reverse Transfer Capacitance C rss - 16 - Gate Total Charge Q g - 28 - Gate-Source charge Q gs - 7 - V SD VGS=0V,IS=7A - 0.92 1.5 Q gd - 12 - I DSS µA Reverse Recovery Time T rr VR=20V,IF=20A, di/dt=100A/us - 400 - vBody Diode Forward Voltage Gate Resistance nS Parameter Symbol TEST CONDITION Unit ■Source-Drain Characteristics A Drain-Source Leakage Current Rg VDS=0V,VGS=0V,f=1MHz - 1.8 - Ω ■Switching Paramters Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Rise Time td(on) tr td(off) tf VDS=325V,ID=7A, VGS=10V,RG=25Ω nS Max. Diode Forward Cuurent I S - - 7 VDS=520V,ID=7A, VGS=10V Gate-Drain charge nC - - 28 - 60 - A Reverse Recovery Charge Qrr VR=400V,IF=7A, di/dt=100A/us - 3.3 - ᵤc Max. Pulsed Forward Cuurent I SM

Electronic Co. Ltd For Approval VDS Http://www.nhel.com.cn Data: 2014/10/20 Rev.: A/1 Page: 3 of 8 Tj - Junction Temperature (° C) VDS (V) P7N65S Silicon 650V N-Channel MOSFET Typical Performance Characteristics VDS (V) VGS (V) Fig 1: Output Characteristics Fig 2: Transfer Characteristics Fig 5: Rds(on) vs. Temperature Fig 6: Capacitance Characteristics Id (A)RDS(on) (mΩ)RDS(on)_Normalized Id (A)RDS(on) (mΩ)C - Capacitance (PF) ID (A) VGS (V) Fig 3: Rds(on) vs Drain Current and Gate Voltage Fig 4: Rds(on) vs Gate Voltage

Electronic Co. Ltd For Approval VDS Http://www.nhel.com.cn Data: 2014/10/20 Rev.: A/1 Page: 4 of 8 P7N65S Silicon 650V N-Channel MOSFET Typical Performance Characteristics Qg (nC) VSD - Diode Forward Voltage(V) Fig 7: Gate Charge Characteristics Fig 8: Body-diode Forward Characteristics VGS (V))BVdss-Breakdown voltage(V) IS - Diode Current(A) Tj-Junction Temperature (° C) Fig 9: Breakdown Voltage Vs Junction Temperature

Electronic Co. Ltd For Approval VDS =25V Http://www.nhel.com.cn Data: 2014/10/20 Rev.: A/1 Page: 5 of 8 P7N65S Silicon 650V N-Channel MOSFET Test Circuit & Waveform

Electronic Co. Ltd For Approval A B b C D E VD K Http://www.nhel.com.cn Data: 2014/10/20 Rev.:A/1 Page: 6 of 8 Quantity (box/carton) P7N65S Silicon 650V N-Channel MOSFET OUTLINE DRAWINGS: TO-220-3L OUTLINE DIMENSIONS Packing Information Product code Pack Box Size L× W× H(mm) Quantity (pcs/box) Carton Size L× W× H(mm) NVT075N03S TO-252 T/R 350× 350× 40 3000 360× 360× 210 DIM MILLIMETERS TYP. MAX.MIN. 2.10 - 2.50 0.80 - 1.25 0.50 - 0.85 0.50 - 0.90 0.45 - 0.60 0.45 - 0.60 6.35 - 6.75 5.10 - 5.50 5.80 - 6.30 2.25 2.30 2.35 4.45 - 4.75 9.50 - 10.20 0.90 - 1.45 0.60 - 1.10 -0.10 - 0.10

Electronic Co. Ltd For Approval OUTLINE DRAWINGS: TO-220-3L Recommended temperature profile for IR reflow Note : All temperatures refer to topside of the package, measured on the package body surface. Http://www.nhel.com.cn Data: 2014/10/20 Rev.: A/1 Page: 7 of 8 P7N65S Silicon 650V N-Channel MOSFET Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 ° C 5 +1/-1 seconds Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. 3° C/second max. Time within 5° C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100° C 150° C 60-120 seconds 150° C 200° C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183° C 60-150 seconds 217° C 60-150 seconds Ramp down rate 6° C/second max. 6° C/second max. Time 25 ° C to peak temperature 6 minutes max. 8 minutes max. Peak Temperature(TP) 240 +0/-5 ° C 260 +0/-5 ° C

Electronic Co. Ltd For Approval Disclaimer Http://www.nhel.com.cn Data: 2014/10/20 Rev.: A/1 Page: 8 of 8 Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Niuhang Electronics co., LTD.makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. The products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining,such as medical instruments.transportation equipment,aerospae machinery et cetera.Customers usin or selling these products for use in such applications do so at their own rish and agree to fully indemnify Niuhang Electronics co., LTD.for any damages resulting resulting from such improper use or sale. When the appearance of the product and chip size does not change, in order to product the customer. quality, change the internal structure and the production process Niuhang can not notify P7N65S Silicon 650V N-Channel MOSFET Reproducing and modifying informatiom of the document is prohibited without permission from niuhang Electronics co., LTD Niuhang Electronics co., LTD. reserves the rights to make changes of the content herein the document anytime without notification. Niuhang Electronics co., LTD. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. Niuhang Electronics co., LTD. does not assume any and all implied warranties, including warranties of fitness for particular purpose,non-infringement and merchantability.