P7N60DD2 SILAN | Alldatasheet
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Technical content
SVSP7N60F(FJD)(D)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.2 http: //www.silan.com.cn Page 1 of 9 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR
DESCRIPTION
SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads t he design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies.
FEATURES
7A,600V, RDS(on)(typ.)=0.48@VGS=10V New revolutionary high voltage technology Ultra low gate charge Enhanced avalanche capability Extreme dv/dt rated High peak current capability TO-220FJD-3L 123 TO-252-2L 1 3 1.Gate 2.Drain 3.Source TO-220F-3L 1 2 3
ORDERING INFORMATION
Part No. Package Marking Hazardous substance control Packing Type SVSP7N60FJDD2 TO-220FJD-3L P7N60FJDD2 Halogen free Tube SVSP7N60DD2TR TO-252-2L P7N60DD2 Halogen free Tape&Reel SVSP7N60FD2 TO-220F-3L P7N60FD2 Halogen free Tube
SVSP7N60F(FJD)(D)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.2 http: //www.silan.com.cn Page 2 of 9 ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TA=25C) Characteristics Symbol Ratings Unit SVSP7N60F/FJDD2 SVSP7N60DD2 Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Drain Current TC=25° C ID 7.0 A TC=100°C 4.4 Drain Current Pulsed IDM 28 A Power Dissipation (TC=25C) -Derate above 25C PD 30 60 W 0.24 0.48 W/C Single Pulsed Avalanche Energy (Note 1) EAS 255 mJ Reverse diode dv/dt (Note 2) dv/dt 15 V/ns MOSFET dv/dt ruggedness (Note 3) dv/dt 50 V/ns Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C THERMAL CHARACTERISTICS Characteristics Symbol Ratings Unit SVSP7N60F/FJDD2 SVSP7N60DD2 Thermal Resistance, Junction-to-Case RθJC 4.17 2.08 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.0 C/W
SVSP7N60F(FJD)(D)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.2 http: //www.silan.com.cn Page 3 of 9 ELECTRICAL CHARACTERISTICS (UNLESS OTHERWISE NOTED, Tj=25C) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 600 -- -- V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS=VDS, ID=250µ A 2.0 -- 4.0 V Static Drain- Source on State Resistance RDS(on) VGS=10V, ID=3.5A -- 0.48 0.58 Gate Resistance Rg f=1.0MHz -- 4.5 -- Input Capacitance Ciss VDS=100V, VGS=0V, f=1.0MHz -- 427 -- pF Output Capacitance Coss -- 26 -- Reverse Transfer Capacitance Crss -- 1.9 -- Turn-on Delay Time td(on) VDD=300V, ID=7.0A, VGS=10V, RG=24 (Note 4,5) -- 11 -- ns Turn-on Rise Time tr -- 29 -- Turn-off Delay Time td(off) -- 43 -- Turn-off Fall Time tf -- 25 -- Total Gate Charge Qg VDS=480V, ID=7.0A, VGS=10V (Note 4,5) -- 16 -- nC Gate-Source Charge Qgs -- 3.8 -- Gate-Drain Charge Qgd -- 8.3 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P -N Junction Diode in the MOSFET -- -- 7.0 A Pulsed Source Current ISM -- -- 28 Diode Forward Voltage VSD IS=7.0A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr IS=7.0A,VGS=0V, dIF/dt=100A/µs (Note 4) -- 344 -- ns Reverse Recovery Charge Qrr -- 2.6 -- µC Notes: 1. L=79mH,IAS=2.4A,VDD=100V, RG=25, starting temperature TJ=25C; 2. VDS=0~400V,ISD<=7.0A, TJ=25C; 3. VDS=0~480V; 4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 5. Essentially independent of operating temperature.
SVSP7N60F(FJD)(D)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.2 http: //www.silan.com.cn Page 6 of 9 TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD VGS L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1
2 LIAS
2 BVDSS
Vgs(th) Qg(th)
SVSP7N60F(FJD)(D)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.2 http: //www.silan.com.cn Page 7 of 9 PACKAGE OUTLINE TO-220FJD-3L UNIT: mm 2.80 4.42 4.70 2.30 2.54 5.02 3.102.50 2.76 0.850.55 1.29 0.650.35 0.50 16.2515.25 15.87 14.9713.97 14.47 11.5810.58 11.08 10.369.73 10.16 2.54BCS 7.006.40 6.68 13.4812.48 12.98 2.00 3.403.00 3.18 3.553.05 3.30 0.70 TO-252-2L UNIT: mm SYMBOL MIN NOM MAX A b c D E e H L 2.10 2.30 2.50 0 --- 0.127 0.66 0.76 0.89 5.10 5.33 5.46 0.45 --- 0.65 0.45 --- 0.65 5.80 6.10 6.40 6.30 6.60 6.90 9.60 10.10 10.60 1.40 1.50 1.70 0.60 0.80 1.00 NOTE1：There are two conditions for this position:has an eject pin or has no eject pin. Eject pin（note1） 2.30TYP L1 2.90REF
SVSP7N60F(FJD)(D)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.2 http: //www.silan.com.cn Page 8 of 9 PACKAGE OUTLINE(CONTINUED) TO-220F-3L UNIT: mm 2.80 4.42 4.70 2.30 2.54 5.02 3.102.50 2.76 0.900.70 0.80 1.47 0.650.35 0.50 16.2515.25 15.87 16.3015.30 15.75 10.309.30 9.80 10.369.73 10.16 2.54BCS 7.006.40 6.68 13.4812.48 12.98 3.50/ / 3.403.00 3.18 3.553.05 3.30 Important notice : The instructions are subject to change without notice！ Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. Our products are consumer electronic products, and / or civil electronic products. When using our products, please do not exceed the maximum rating of the products, otherwise the reliability of the whole machine will be affected. There is a certain possibility of failure or malfunction of any semiconductor product under specifi c conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause personal injury or property loss. It is strongly recommended to identify the trademark when buying our products. Please conatus us if there is any question. When exporting, using and reselling our products, buyer must comply with the international export control laws and regulations of China, the United States, the United Kingdom, the European Union and other countries & regions. Product promotion is endless, our company will wholeheartedly provide customers with better products! Website: http: //www.silan.com.cn
SVSP7N60F(FJD)(D)D2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.2 http: //www.silan.com.cn Page 9 of 9 Part No.: SVSP7N60F(FJD)(D)D2 Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.2 Revision History: 1. Modify Electrical schematic and TYPICAL TEST CIRCUIT Rev.: 1.1 Revision History: 1. Update Fig 5 Rev.: 1.0 Revision History: 1. First release