P4SMA HDSEMI | Alldatasheet
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H igh Diode Semiconductor SMAK Transient Voltage Suppressor Diodes Glass passivated chip● P PP 400W V RWM 6.8V- 600V Clamping Voltage
- P4SMA From 6.8 To 600 XXCA/XXA XX Notes: Item Symbol Unit Conditions Max Peak power dissipation P PPM W with a 10/1000us waveform 400 Peak pulse current I PPM A with a 10/1000us waveform See Next Table Power dissipation P D W On infinite heat sink at T L =75℃ 1.0 Peak forward surge current(2) I FSM A 8.3 ms single half sine-wave unidirectional only 40 Operating junction and storage temperature range T J STG ℃ -55 to +150 Item Symbol Unit Conditions Max Maximum inst antaneous forward Voltage (3) V F V at 25A for unidirectional only 3.5/5.0 Thermal resistance R θJL ℃/W junction to lead 30 R θJA ℃/W junction to ambient， L Lead = 10 mm 120 (1) Non-repetitive current pulse, per Fig. 3 and derated above T A = 25 p℃ er Fig.2. (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal (3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V (1) Electrical Characteristics（Ta=25 Unl℃ ess otherwise specified） Bi-directional Uni-direction HD AK 70 P4SMA SERIES
Electrical Characteristics (T A =25 unless otherwise noted)℃ H igh Diode Semiconductor
H igh Diode Semiconductor 150 100 0 1.0 2.0 3.0 4.0 FIG.3-PULSE WAVEFORM t,TIME,ms 100 1.0 0.1 0.1ms 1.0ms 10ms 100ms 1.0ms 10ms FIG. 1-PEAK PULSE POWER RATING CURVE td,PULSE WIDTH,sec. 10,000 1,000 100 1.0 10 100 200 1.0 10 100 FIG. 4-TYPICAL JUNCTIONAL CAPACITANCE UNIDIRECTIONAL FIG.6-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY V(BR),BREAKDOWN VOLTAGE,VOLTS NUMBER OF CYCLES AT 60Hz 100 0 25 50 75 100 125 150 175 200 FIG. 2-PULSE DERATING CURVE TA, AMBIENT TEMPERATURE,( C) 0 100 200 300 400 500 100 0.1 0.01 FIG.7-TYPICAL REVERSE LEAKAGE CHARCTERISTICS V(BR),BREAKDOWN VOLTAGE,VOLTS 1.00 0.75 0.50 0.25 0 25 50 75 100 125 150 175 200 FIG.5-STEADY STATE POWER DERATING CURVE TL,LEAD TEMPERATURE, C INSTANTANEOUS REVERSE LEAKAGE CURRENT,MICROAMPERES PM(AV),STEADY STATE POWER DISSIPATION,WATTS IppM,PEAK PULSE CURRENT,% PppM,PEAK PULSE POWER,kw IFSM,PEAK FORWARD SURAGE CURRENT AMPERES CJ,JINCTION CAPACITANCE,pF PEAK PULSE POWER(PppM)or CURRENT(IppM) DERATING IN PERCENTAGE,% NON-REPETITIVE PULSE WAVEFORM SHOWN inFIG.3 TA=25 C TJ=25 C f=1.0Mhz Vsig=50mVp-p MEASURED at ZERO BIAS TJ=TJmax. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) TA=25 C MEASURED AT DEVICES STAND-OFF VOLTAGE,Vwm L=0.375” (9.5mm) lLEAD LENGTHS 1.6 1.6 0.040” (40 40 1mm) COPPER HEAT SINKS 60Hz RESISTIVE OR INDUCTIVE LOAD 10/1000msec WAVEFORM as DFINED by R.E.A. PULSE WIDTH (td) is DEFINED as the POINT WHERE the PEAK CURRENT DECAYS to 50% of IppM PEAK VALUE IppM tr=10msec MEASURED at STAND-OFF VOLTAGE,VwM td HALF VALUE IPPM
H igh Diode Semiconductor SMAK SMAK 0.106(2.70) 0.096(2.45) 4.12 1.8
Reel Taping Specifications For Surface Mount Dev ices- SMA H igh Diode Semiconductor