P4KE

P4KE HDSEMI | Alldatasheet

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Glass passivated chip● P PP 400W V RWM 6.8V- 550V Clamping Voltage

• P4K EXXA/CA From 6.8 To550XX Item Symbol Unit Conditions Max Peak power dissipation PPPM W with a 10/1000us waveform 400 Peak pulse current IPPM A with a 10/1000us waveform See Next Table Power dissipation PD W on infinite heat sink at TL=75℃ 1.5 Peak forward surge current IFSM A 8.3 ms single half sine-wave unidirectional only 40 Operating junction and storage emperature range TJ,TSTG ℃ -55 to +175 Electrical Characteristics（Ta=25 Unl℃ ess otherwise specified） Item Symbol Unit Conditions Max Maximum instantaneous forward Voltage（1） VF V at 25A for unidirectional only 3.5/5.0 R θJL ℃/W junction to lead 66 Thermal resistance R θJA ℃/W junction to ambient， L Lead = 10 mm 100 Notes: VF = 3.5 V for P4KE220(A) and below; VF = 5.0 V for P4KE250(A) and above Bi-directional Uni-direction

Electrical Characteristics (T A =25 unless otherwise noted)℃ H igh Diode Semiconductor Breakdown Voltage V BR T Part Number(Uni) Part Number(Bi) Min(V) Max (V) IT(mA) Maximum Reverse Leakage I R V WM (μA) Working Peak Reverse Voltage V RWM (V) Maximum Reverse Surge Current IPP (A) Maximum Clamping Voltage Vc @ I PP (V) Maximum Temperature Coefficient of V BR (%/°C) P4KE10 P4KE10C 9 11 1 10 8.1 26.7 15 0.073 P4KE20 P4KE20C 18 22 1 1 16.2 13.7 29.1 0.090 P4KE20A P4KE20CA 19 21 1 1 17.1 14.4 27.7 0.090 P4KE30 P4KE30C 27 33 1 1 24.3 9.2 43.5 0.097

Electrical Characteristics (T A =25 unless otherwise noted)℃ H igh Diode Semiconductor Breakdown Voltage V BR T Part Number(Uni) Part Number(Bi) Min(V) Max (V) IT(mA) Maximum Reverse Leakage I R V WM (μA) Working Peak Reverse Voltage V RWM (V) Maximum Reverse Surge Current IPP (A) Maximum Clamping Voltage Vc @ I PP (V) Maximum Temperature Coefficient of V BR (%/°C) P4KE62A P4KE62CA 58.9 65.1 1 1 53 4.7 85 0.104 P4KE91 P4KE91C 81.9 100 1 1 73.7 3.1 131 0.106 P4KE100 P4KE100C 90 110 1 1 81 2.8 144 0.106 P4KE100A P4KE100CA 95 105 1 1 85.5 2.9 137 0.106 P4KE110 P4KE110C 99 121 1 1 89.2 2.5 158 0.107 P4KE110A P4KE110CA 105 116 1 1 94 2.6 152 0.107 P4KE120 P4KE120C 108 132 1 1 97.2 2.3 173 0.107 P4KE120A P4KE120CA 114 126 1 1 102 2.4 165 0.107 P4KE130 P4KE130C 117 143 1 1 105 2.1 187 0.107 P4KE130 P4KE130CA 124 137 1 1 111 2.2 179 0.107 P4KE150 P4KE150C 135 165 1 1 121 1.9 215 0.108 P4KE150A P4KE150CA 143 158 1 1 128 1.9 207 0.108 P4KE160 P4KE160C 144 176 1 1 130 1.7 230 0.108 P4KE160A P4KE160CA 152 168 1 1 136 1.8 219 0.108 P4KE170 P4KE170C 153 187 1 1 138 1.6 244 0.108 P4KE170A P4KE170CA 162 179 1 1 145 1.7 234 0.108 P4KE180 P4KE180C 162 198 1 1 146 1.6 258 0.108 P4KE180A P4KE180CA 171 189 1 1 154 1.6 246 0.108

Electrical Characteristics (T A =25 unless otherwise noted)℃ H igh Diode Semiconductor Breakdown Voltage V BR T Part Number(Uni) Part Number(Bi) Min(V) Max (V) IT(mA) Maximum Reverse Leakage I R V WM (μA) Working Peak Reverse Voltage V RWM (V) Maximum Reverse Surge Current IPP (A) Maximum Clamping Voltage Vc @ I PP (V) Maximum Temperature Coefficient of V BR (%/°C) P4KE200 P4KE200C 180 220 1 1 162 1.4 287 0.108 P4KE200A P4KE200CA 190 210 1 1 171 1.5 274 0.108 P4KE220 P4KE220C 198 242 1 1 175 1.2 344 0.108 P4KE220A P4KE220CA 209 231 1 1 185 1.2 328 0.108 P4KE250 P4KE250C 225 275 1 1 202 1.1 360 0.110 P4KE250A P4KE250CA 237 263 1 1 214 1.2 344 0.110 P4KE300 P4KE300C 270 330 1 1 243 0.93 430 0.110 P4KE300A P4KE300CA 285 315 1 1 256 1 414 0.110 P4KE350 P4KE350C 315 385 1 1 284 0.79 504 0.110 P4KE350A P4KE350CA 333 368 1 1 300 0.83 482 0.110 P4KE400 P4KE400C 360 440 1 1 324 0.7 574 0.110 P4KE400A P4KE400CA 380 420 1 1 342 0.73 548 0.110 P4KE440 P4KE440C 396 484 1 1 356 0.63 631 0.110 P4KE440A P4KE440CA 418 462 1 1 376 0.66 602 0.110 P4KE480 P4KE480C 432 528 1 1 389 0.58 686 0.110 P4KE480A P4KE480CA 456 504 1 1 408 0.61 658 0.110 P4KE510 P4KE510C 459 561 1 1 413 0.55 729 0.110 P4KE510A P4KE510CA 485 535 1 1 434 0.57 698 0.110 P4KE540 P4KE540C 486 594 1 1 437 0.52 772 0.110 P4KE540A P4KE540CA 513 567 1 1 459 0.54 740 0.110 P4KE550 P4KE550C 495 605 1 1 470 0.51 786 0.110 P4KE550A P4KE550CA 522 577 1 1 467 0.53 760 0.110

H igh Diode Semiconductor 0.1 1 10 100 1000 10000 0.1 td(μs) PPPM(KW) FIG1:Peak Pulse Power Rating Curve 1.0 100 Non-Repetitive Pulse Waveform shown in Fige.3 TA=25℃ 0.001 0.01 0.1 1 10 1000 tp(s) Rth( /W)℃ FIG6:Typical Transient Thermal Impedance 100 100 0 10 100 Number of Cycles IFSM(A) FIG5: Maximum Non-Repetitive Surge Current 100 TJ=TJMax. 8.3ms Single Half Sine-Wave 02 0 0 TJ （℃） PPP or IPP(%) FIG2: Pulse Power or Current vs. Initial Junction Temperature 100 175150125100755025 0 200 TL （℃） PD(%) FIG4: Power Derating Curve 100 175150125100755025 60Hz Resistive or Inductive Load L=0.375''(9.5mm) Lead Lengths 04 . 0 t（ms） IPPM(%) FIG3: Pulse Waveform 150 100 3.02.01.0 TJ=25 Pulse Width(td) is defined as the Point where the Peak Current Decays to 50% of IPPM 10/1000 μs Waveform as Defined by R.E.A. tr=10μs Peak Value IPPM Half Value - IPP IPPM td

H igh Diode Semiconductor DO-4 1 1.0(25.4) MIN .205(5.21) .166(4.22) .034(0.86) .028(0.71) DIA .107(2.72) .080(2.03) 1.0(25.4) MIN Unit: in inches (millimeters) DIA

H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers