P0080TA HDSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

H igh Diode Semiconductor Thyristor Surge Suppressors

  • Low switching voltage
  • Low on-state voltage
  • Does not degrade surge capability after multiple surge Events within limit
  • Fails short circuit when surged in excess of ratings
  • Low Capacitance
  • Protect circuit

Applications

CO Off-state Capacitance—typical capacitance measured in off state di /dt Rate of Rise of Current —maximum rated value of the acceptable rate of rise in current over time IS Switching Current—maximum current required to switch to on state IDRM Leakage Current —maximum peak off-state current measured at VDRM IH Holding Current —minimum current required to maintain on state IPP Peak Pulse Current—maximum rated peak impulse current IT On-state Current—maximum rated continuous on-state current ITSM Peak One-cycle Surge Current —maximum rated one-cycle AC current VS Switching Voltage —maximum voltage prior to switching to on state VDRM Peak Off-state Voltage —maximum voltage that can be applied while maintaining off state VF On-state Forward Voltage —maximum forward voltage measured at rated on-state current VT On-state Voltage —maximum voltage measured at rated on-state current Electrical Characteristics (T =25℃ Unless otherwise specified）a P0080TA THRU P4200TA SMAK

H igh Diode Semiconductor

Electrical Characteristics

Electrical Characteristics (T =25℃ Unless otherwise specified）a Limiting Values (Absolute Maximum Rating) P0080TA 6 5 25 800 4 2.2 50 50 PART NUMBER V DRM V I DRM uA Max V S V Max I S mA I T A V T V Max I H mA Min C O pF Typ 1、Vs is measured at 100KV/S 2、Off-state capacitance is measured in V =2V,V =1V,F=1MHz DC RMS 3、℃All measurements are made at an ambient temperature of 25 P0300TA 25 5 40 800 4 2.2 50 50 P0640TA 58 5 77 800 4 2.2 50 50 P1800TA 170 5 220 800 4 2.2 50 50 P2300TA 190 5 260 800 4 2.2 50 50 P2600TA 220 5 300 800 4 2.2 50 50 P3100TA 275 5 350 800 4 2.2 50 50 P3500TA 320 5 400 800 4 2.2 50 50 P4200TA 390 5 500 800 4 2.2 50 50 Series P0080TA Thru P4200TA IPP 2x10us (A) 150 IPP 8x20us (A) 150 VPP 10x700us (V) 3000 IPP 10x560us (A) IPP 10x1000us (A) I TSM 60Hz (A) d/ d it (A/us) 500 Symbol T J Parameter Opera/g415ng Junc/g415on Temperature Value -40 to +150 Unit T S Storage Temperature Range -40 to +150 R θ JA Junc/g415on to Ambient on printed circuit ℃/W Min

H igh Diode Semiconductor I S I H I DRM V T V S I T V DRM V-I Characteristics 100 tr td0 Peak Value Half Value tr = rise /g415me to peak value td = decay /g415me to half value Wave fo rm = tr x t d IPP– Peak Pulse Current – %IPP t–T i m e ( μ s ) trtr x td Pulse Waveform --40 20 0 2 0 40 60 80 1 00 120 140 16 0 Percent of V Change – % S Junc/g415on Temperature (TJ) – °C 25 °C 2.0 1. 8 1. 6 1. 4 1. 2 1. 0 0.8 0.6 0.4 - -2040 0 20 40 60 80 1 00 120 1 40 160 25 °C Case Temperature (T ) - °C C Ra/g415o of I H I (Tc=25 °C) H Normalized V Change vs. Junction Temperature S Normalized DC Holding Current vs. Case Temperature

H igh Diode Semiconductor JSHD JSHD SMAK SMAK 0.106(2.70) 0.096(2.45) 4.12 1.8

H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMA