P2H80QH15 NIEC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Maximum Ratings Approx Net Weight:35g Type / Grade Parameter Parameter Parameter Parameter Symbol P2H80QH15 Unit Repetitive Peak Reverse Voltage *1 VRRM 150 Non Repetitive Peak Reverse Voltage *1 VRSM V Parameter Parameter Parameter Parameter Conditions Conditions Conditions Conditions Max Rated Max Rated Max Rated Max Rated Value Value Value Value Unit Average Rectified Output Current *1 IO(AV) 50Hz Half Sine Wave condition Tc=To Be Determined A Surge Forward Current *1 IFSM
50 Hz Half Sine Wave,1Pulse
A Operating JunctionTemperature Range Tjw -40 to +150 Storage Temperature Range Tstg -40 to +125 Isoration Voltage Viso Base Plate to Terminals, AC1min 2500 V Terminals M4Screw 1.5(1.4) Mounting torque Case mounting Ftor M4Screw with Thermal Compound 1.5(1.4) N•m Electrical • Thermal Characteristics Characteristics Symbol Test Conditions Max. Unit Peak Reverse Current *1 IRM VRM= VRRM, Tj= 25°C µA Peak Forward Voltage *1 VFM IFM= 80A, Tj=25°C 1.02 V Rth(j-c) Junction to Case 0.53 Thermal Resistance *1 Rth(c-f) Base Plate to Heat Sink with Thermal Compound 0.3 °C/W *1: Value Per 1Arm
FEATURES
- Compatible with Isolated Base SOT227 * Dual Separated Diodes * Extremely Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability TYPICAL APPLICATIONS * High Frequency Rectification P2H80QH15 P2H80QH15 P2H80QH15 P2H80QH15 OUTLINE DRAWING See the Next Page TENTATIVE
P2H80QH15 OUTLINE DRAWING (Dimensions in mm)