P2H80F4 NIEC | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
FEATURES
- Compatible with Isolated Base SOT227 * Dual Separated Diodes * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability TYPICAL APPLICATIONS * High Frequency Rectification See the Next Page Maximum Ratings Approx Net Weight:35g Type / Grade Parameter Symbol P2H80F4 Unit Repetitive Peak Reverse Voltage *1 VRRM 400 Non Repetitive Peak Reverse Voltage *1 VRSM V Parameter Conditions Max Rated Value Unit Average Rectified Output Current *1 IO(AV) 50Hz Half Sine Wave condition Tc=85°C A RMS Forward Current *1 IF(RMS) 125 A Surge Forward Current *1 IFSM
50 Hz Half Sine Wave,1Pulse
A I Squared t *1 I2t 2msec to 10msec 3200 A2s Operating JunctionTemperature Range Tjw -40 to +150 Storage Temperature Range Tstg -40 to +125 Isoration Voltage Viso Base Plate to Terminals, AC1min 2500 V Case mounting M4Screw 1.5(1.4) Mounting torque Terminals Ftor M4Screw 1.5(1.4) N•m Electrical • Thermal Characteristics Characteristics Symbol Test Conditions Max. Unit Peak Reverse Current *1 IRM VRM= VRRM, Tj= 25°C 150 µA Peak Forward Voltage *1 VFM IFM= 80A, Tj=25°C 1.31 V Reverse Recovery Time trr Tj=25°C , IFM=10A, -di/dt=50A/µs ns Rth(j-c) Junction to Case 0.51 Thermal Resistance *1 Rth(c-f) Base Plate to Heat Sink with Thermal Compound 0.3 °C/W *1: Value Per 1Arm
P2H80F4 OUTLINE DRAWING (Dimensions in mm)