P2006AS ADV | Alldatasheet
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Technical content
1 / 4 www.advsemi.com Ver.0.10 ADV P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY Absolute Maximum Ratings ( TA = 25°C unless otherwise specified ) Symbol Parameter Ratings Unit Common Ratings VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 TJ Maximum Junction Temperature 155 °C TSTG Storage Temperature Range -55 to 175 °C IS Diode Continuous Forward Current T C=25°C -35 A Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ TC=25°C -14 A ID Continuous Drain Current T C=25°C -35 A PD Maximum Power Dissipation T C=25°C 3.0 W Thermal Characteristics Symbol Parameter Ratings Unit RthJC Thermal resistance junction-case max 4.6 °C/W RthJA Thermal resistance junction-ambient max(PCB mounted ) ⑵ 40 °C/W 1. Pulse width limited by maxi mum junction temperature. 2. 1-in 2 2oz Cu PCB board VDSS I D RDS(ON) (mΩ) -20V -35A 6mΩ SOP-8 S S S G D D D D
2 / 4 www.advsemi.com Ver.0.10 ADV Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test conditions Min. Typ. Max. Unit On/off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250uA -20 -- -- V IDSS Zero Gate Voltage Drain Current VDS= -20V, VGS=0V -- -- -1 uA VGS(th) Gate Threshold Voltage V DS=VGS, IDS=-250uA -0.45 -- -1.0 V IGSS Gate Leakage Current VGS=±12V, VDS=0V -- -- ±100 nA RDS(ON) Drain-SourceOn-stateResistance⑵ VGS= -2.5V, IDS=-10A -- 6.0 8 VGS= -4.5V, IDS=-20A -- 4.8 6 gFS Forward transconductance⑵ VDS=- 10V, IDS=-20A 20 -- -- S Dynamic Characteristics Ciss Input Capacitance VGS=0V, VDS= -10V, Frequency=1.0MHz -- 3000 -- pF Coss Output Capacitance -- 650 -- Crss Reverse Transfer Capacitance -- 500 -- Switching Characteristics td(ON) Turn-on Delay Time⑴ VDS =-10V, ID= -1A, VGS= -4.5V, RGEN=6Ω -- 10 -- ns tr Turn-on Rise Time⑴ -- 15 -- td(OFF) Turn-off Delay Time⑴ -- 110 -- tf Turn-off Fall Time⑴ -- 70 -- Qg Total Gate Charge⑴ VDS=-10V, VGS= -4.5V, IDS=-10A -- 55.0 -- nC Qgs Gate-Source Charge⑴ -- 10 -- Qgd Gate-Drain Charge⑴ -- 15 -- Diode Characteristics VSD Diode Forward Voltage⑵ ISD = -35A, VGS = 0 -- -- -1.2 V NOTES: 1. Independent of oper ating temperature. 2. Pulse Test : Pulse width ≤ 300 μs, Duty cycle ≤ 2%
3 / 4 www.advsemi.com Ver.0.10 ADV Typical Performance Characteristics
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5 / 6 www.advsemi.com Ver.0.10 ADV
6 / 6 www.advsemi.com Ver.0.10 ADV PACKAGE MECHANICAL DATA
Ordering information
Symbol Dimensions ln Millimeters Dimensions ln lnches Min Max Min Max A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E1 5.800 6.200 0.228 0.244 E 3.800 4.000 0.150 0.157 e 1.270TYP 0.050TYP e1 4.500 4.700 0.177 0.185 L 0.400 1.270 0.016 0.050 D b e A L E c Part number Package Marking Packing Quantity P2006AS SOP-8 P2006AS Embossed tape 4000pcs