P14N65FJD SILAN | Alldatasheet
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Technical content
SVSP14N65FJD/T/KD2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 1 of 9 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR
DESCRIPTION
SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore , it’s universal applicable, i.e., suitable for hard and soft switching topologies.
FEATURES
14A,650V, RDS(on)(typ.)=0.26@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability TO-262-3L TO-220FJD-3L 123 TO-220-3L 1 2 3 1 2 3 1.Gate 2.Drain 3.Source
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type SVSP14N65FJDD2 TO-220FJD-3L P14N65FJD Halogen free Tube SVSP14N65TD2 TO-220-3L P14N65TD2 Halogen free Tube SVSP14N65KD2 TO-262-3L P14N65KD2 Halogen free Tube
SVSP14N65FJD/T/KD2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 2 of 9 ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TA=25C) Characteristics Symbol Ratings Unit SVSP14N65FJDD2 SVSP14N65TD2/KD2 Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Drain Current TC=25° C ID A TC=100°C 8.8 Drain Current Pulsed IDM 56 A Power Dissipation (TC=25C) - Derate above 25C PD 35.7 139 W 0.29 1.1 W/C Single Pulsed Avalanche Energy (Note1) EAS 593 mJ Reverse diode dv/dt (Note 2) dv/dt 15 V/ns MOSFET dv/dt ruggedness (Note 3) dv/dt 50 V/ns Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C THERMAL CHARACTERISTICS Characteristics Symbol Value Unit SVSP14N65FJDD2 SVSP14N65TD2/KD2 Thermal Resistance, Junction-to-Case RθJC 3.50 0.9 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 62.5 C/W
SVSP14N65FJD/T/KD2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 3 of 9 ELECTRICAL CHARACTERISTICS (UNLESS OTHERWISE NOTED, Tj=25C) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 650 -- -- V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V -- -- 1.0 µA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µ A 2.0 -- 4.0 V Static Drain- Source on State Resistance RDS(on) VGS=10V, ID=7.0A -- 0.26 0.31 Gate resistance Rg f=1MHz -- 2.7 -- Input Capacitance Ciss f=1MHz,VGS=0V, VDS=100V -- 802 -- pF Output Capacitance Coss -- 45 -- Reverse Transfer Capacitance Crss -- 2.5 -- Turn-on Delay Time td(on) VDD=325V, VGS=10V, RG=24Ω, ID=14A (Note 4,5) -- 13 -- ns Turn-on Rise Time tr -- 37 -- Turn-off Delay Time td(off) -- 59 -- Turn-off Fall Time tf -- 32 -- Total Gate Charge Qg VDD=520V, VGS=10V, ID=14A (Note 4,5) -- 24 -- nC Gate-Source Charge Qgs -- 6.5 -- Gate-Drain Charge Qgd -- 11 -- SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P -N Junction Diode in the MOSFET -- -- 14 A Pulsed Source Current ISM -- -- 56 Diode Forward Voltage VSD IS=14A,VGS=0V -- -- 1.4 V Reverse Recovery Time Trr VDD=50V, IF=14A , dIF/dt=100A/µs (Note 4) -- 367 -- ns Reverse Recovery Charge Qrr -- 4.7 -- µC Notes: 1. L=79mH,IAS=3.6A,VDD=100V, RG=25, starting temperature TJ=25C; 2. VDS=0~400V,ISD<=14A, TJ=25C; 3. VDS=0~480V; 4. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 5. Essentially independent of operating temperature.
SVSP14N65FJD/T/KD2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 6 of 9 TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD VGS L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1
2 LIAS
2 BVDSS
Vgs(th) Qg(th)
SVSP14N65FJD/T/KD2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 7 of 9 PACKAGE OUTLINE TO-220FJD-3L UNIT: mm 2.80 4.42 4.70 2.30 2.54 5.02 3.102.50 2.76 0.850.55 1.29 0.650.35 0.50 16.2515.25 15.87 14.9713.97 14.47 11.5810.58 11.08 10.369.73 10.16 2.54BCS 7.006.40 6.68 13.4812.48 12.98 2.00 3.403.00 3.18 3.553.05 3.30 0.70 TO-220-3L UNIT: mm 4.30 4.70 1.00 1.50 1.80 2.80 0.60 1.00 1.00 1.60 15.10 16.1015.70 8.10 10.009.20 9.60 9.90 10.40 2.54BSC 2.60 3.20 6.10 7.00 4.50 0.30 0.70 12.60 13.08 13.60 1.30 6.50 0.80 3.40 3.95 3.70 3.90 2.40
SVSP14N65FJD/T/KD2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 8 of 9 PACKAGE OUTLINE(CONTINUED) TO-262-3L UNIT: mm SYMBOL MIN NOM MAX A b c D E e L 4.30 4.50 4.70 2.20 2.92 0.71 0.90 1.20 --- 1.50 0.34 --- 0.65 8.38 9.30 9.80 10.16 10.54
2.54 BSC
c2 1.22 1.30 1.35 12.80 14.10 1.12 1.42 --- --- A c 0.80 --- --- D e L e b E Ll Important notice : The instructions are subject to change without notice！ Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. Our products are consumer electronic products, and / or civil electronic products. When using our prod ucts, please do not exceed the maximum rating of the products, otherwise the reliability of the whole machine will be affected. There is a certain possibility of failure or malfunction of any semiconductor product under specifi c conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause personal injury or property loss. It is strongly recommended to identify the trademark when buying our products. Please conatus us if there is any question. When exporting, using and reselling our products, buyer must comply with the international export control laws and regulations of China, the United States, the United Kingdom, the European Union and other countries & regions. Product promotion is endless, our company will wholeheartedly provide customers with better products! Website: http: //www.silan.com.cn
SVSP14N65FJD/T/KD2_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 9 of 9 Part No.: SVSP14N65FJD/T/KD2 Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.3 Revision History: 1. Modify Electrical schematic and TYPICAL TEST CIRCUIT 2. Update Fig 5 Rev.: 1.2 Revision History: 1. Modify Test conditions of IGSS Rev.: 1.1 Revision History: 1. Add SVSP14N65TD2、SVSP14N65KD2 Rev.: 1.0 Revision History: 1. First release