P10N65F NIUHANG | Alldatasheet

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纽航电子有限公司Niu Hang Specification Niu Hang Electronic Co. LtdElectronic Co. Ltd For Approval VOLTAGE CURRENT

  • Low RDS(ON)
  • Ultra Low Gate Charge
  • RoHS Compliant
  • 100% UIS and RG Tested
  • Power factor correction（PFC）
  • Switched mode power supplies(SMPS) Gate:1
  • Uninterruptible Power Supply（UPS） Drain:2 Source:3 VDS ID RDS(ON) ,Typ@10V Qg Absolute Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified ) Unit Drain-Source Voltage V Gate-Source Voltage V Continuous Drain Current (Note 1) A Drain Current-Pulsed (Note 1) A Total Dissipation W Junction Temperature ℃ Single Pulse Avalanche Energy (Note 2) mJ Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Thermal Characteristcs (Ratings at 25℃ ambient temperature unless otherwise specified ) Unit Thermal Resistance Junction-Case ℃/W Thermal Resistance Junction to Ambient (Note 3) ℃/W Notes: 1. Ensure that the channel temperature does not exceed 150℃. 2. VDD=50V, Tch= 25℃(initial), IAS=12A, Rg=25Ω. 3. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design. This transistor is sensitive to electrostatic discharge and should be handled with care. Http://www.nhel.com.cn Data: 2019/08/12 Rev.: A/1 Page: 1 of 6 P10N65F Silicon 650V N-Channel MOS

650 Volts 10 Ampers Marking

TYPICAL APPLICATIONS PRODUCT SUMMARY 650 V 10 A 0.8 Ω 30 nC Parameter Symbol Ratings V DS 650 V GS ±30 I D 10 I DM 40 P D 50 T J 150 Storage temperature range T STD -55 to +150 R θJA 62.5 E AS 750 Parameter Symbol Max R θJC 3.0 P10N65F xxxxxxxxx 1 2 3

Electronic Co. Ltd For Approval Electrical Characteristcs (Ratings at 25℃ ambient temperature unless otherwise specified ) Unit Drain-Source Breakdown Voltage V Drain-Source Leakage Current uA Gate-Body Leakage Current nA Gate Threshold Voltage V Drain-Source On Resistance Ω Input Capacitance pF Output Capacitance pF Reverse Transfer Capacitance pF Gate Resistance Ω Turn-On Delay Time ns Turn-On Rise Time ns Turn-Off Delay Time ns Turn-Off Rise Time ns Total Gate Charge nc Gate-Source Charge nc Gate-Drain Charge nc Max. Diode Forward Cuurent A Max. Pulsed Forward Cuurent A Diode Forward Voltage V Reverse Recovery Time ns Reverse Recovery Charge μC Http://www.nhel.com.cn Data: 2019/08/12 Rev.:A/1 Page: 2 of 6 P10N65F Silicon 650V N-Channel MOS Parameter Symbol Test Conditions MIN. TYP. MAX. Static Parameters BV DSS VGS=0V,ID=250uA 650 - - I DSS VDS=650V,VGS=0V - - 1 I GSS VGS=± 30V,VDS=0V - - ±100 V GS(TH) VGS=VDS,ID=250uA 2 3 4 R DS(ON) VGS=10V,ID=6A - 0.80 1.00 Dynamic Characteristics C iss - 1210 - C oss - 145 - C rss - 16 - R g VDS=0V,VGS=0V, f=1.0MHz - 2.5 - Switching Paramters t d(on) - 20 - t r - 30 - t d(off) - 90 - t f - 40 - - 30 - Qgs - 5.0 - - 14 - Source-Drain Characteristics I S - - 10 - - 40 V SD VGS=0V,IS=12A - 0.92 1.5 - 450 - Qrr - 4 - VDS=25V,VGS=0V, f=1.0MHz VDS=325V,ID=12A, VGS=10V,RG=25Ω VDS=520V,ID=12A, VGS=10V VR=400V,IF=12A, di/dt=100A/us t rr I SM Qgd Qg

纽航电子有限公司Niu Hang Specification Niu Hang Electronic Co. LtdElectronic Co. Ltd For Approval RATING AND CHARACTERIS TICCURVES Http://www.nhel.com.cn Data: 2019/08/12 Rev.: A/1 Page: 3 of 6 P10N65F Silicon 650V N-Channel MOS Fig.1-Output Characteritsics Fig.2- Transfer Characteritsics Fig.5-Rdson-JunctionTemperature Fig.6-Capacitance Fig.3- On Resistance Vs Drain Current Fig.4- On Resistance Vs Gate Source Voltage

纽航电子有限公司Niu Hang Specification Niu Hang Electronic Co. LtdElectronic Co. Ltd For Approval RATING AND CHARACTERIS TICCURVES Note ： The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. Http://www.nhel.com.cn Data: 2019/08/12 Rev.: A/1 Page: 4 of 6 P10N65F Silicon 650V N-Channel MOS Fig.7-Gate Charge Waveform Fig.8- Source-Drain Diode Forward Voltage Fig.9- Breakdown Voltage Vs Junction Temperature

纽航电子有限公司Niu Hang Specification Niu Hang Electronic Co. LtdElectronic Co. Ltd For Approval Http://www.nhel.com.cn Data: 2019/08/12 Rev.: A/1 Page: 5 of 6 Fig.12- EAS Test Circuit & Waveform P10N65F Silicon 650V N-Channel MOS Test Circuit & Waveform Fig.10-Gate Charge Test Circuit & Waveform Fig.11- Resistive Switching Test Circuit & Waveform

纽航电子有限公司Niu Hang Specification Niu Hang Electronic Co. LtdElectronic Co. Ltd For Approval OUTLINE DRAWINGS Packing Information Http://www.nhel.com.cn Data: 2019/08/12 Rev.: A/1 Page: 6 of 6 P10N65F Silicon 650V N-Channel MOS Values(mm) Min. Nom Max. A 4.50 4.90 A1 2.30 2.90 b 0.65 0.90 b1 1.10 1.70 b2 1.20 1.40 c 0.35 0.65 D 14.50 16.50 D1 6.10 6.90 E 9.60 10.30 E1 6.50 7.00 7.50 e 2.44 2.54 2.64 L 12.50 14.30 L1 9.45 10.05 L2 15.00 16.00 3.20 4.40 ΦP 3.00 3.30 2.50 2.90 580*230*175 5 Product code Pack Box Size L× W× H(mm) Quantity(pcs/box) Carton SizeL× W× H(mm) Quantity(box/carton) Items P10N65F P/T 550*150*40 1000 TO-220F-3L Q