P10N60CAFJ SILAN | Alldatasheet
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SVFP10N60CAFJ/FJH_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 1 of 8 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N -channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell stru cture have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC -DC power supplies, DC -DC converters and H-bridge PWM motor drivers.
FEATURES
10A, 600V, RDS(on)(typ.)=0.60@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 1.Gate 2.Drain 3.Source TO-220FJH-3L 2 3TO-220FJ-3L 12 3
ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing Type SVFP10N60CAFJ TO-220FJ-3L P10N60CAFJ Halogen free Tube SVFP10N60CAFJH TO-220FJH-3L P10N60CA Halogen free Tube
SVFP10N60CAFJ/FJH_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 2 of 8 ABSOLUTE MAXIMUM RATINGS (TA=25C UNLESS OTHERWISE NOTED) Characteristics Symbol Ratings Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Drain Current TC = 25C ID A TC = 100C 6.3 Drain Current Pulsed IDM 40 A Power Dissipation(TC=25C) -Derate above 25C PD 45 W
0.36 W/C
Single Pulsed Avalanche Energy (Note 1) EAS 750 mJ Reverse diode dv/dt (Note 2) dv/dt 4.5 V/ns MOSFET dv/dt ruggedness (Note 3) dv/dt 50 V/ns Operation Junction Temperature Range TJ -55～+150 C Storage Temperature Range Tstg -55～+150 C THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Thermal Resistance, Junction-to-Case RθJC 2.78 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W ELECTRICAL CHARACTERISTICS (TJ=25C UNLESS OTHERWISE NOTED) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µ A 600 -- -- V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V -- -- 1 µA Gate-Source Leakage Current IGSS VGS=± 30V, VDS=0V -- -- ± 100 nA Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µ A 2 -- 4 V Static Drain-Source On State Resistance RDS(on) VGS=10V, ID=5.0A Tj=125C 1.27 Gate resistance Rg f=1.0MHz -- 4.5 -- Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz -- 1300 -- pF Output Capacitance Coss -- 150 -- Reverse Transfer Capacitance Crss -- 14 -- Turn-on Delay Time td(on) VDD=300V, ID=10A, RG=25 (Note 4,5) -- 23 -- ns Turn-on Rise Time tr -- 42 -- Turn-off Delay Time td(off) -- 67 -- Turn-off Fall Time tf -- 36 -- Total Gate Charge Qg VDS=480V, ID=10A, VGS=10V (Note 4,5) -- 34 -- nC Gate-Source Charge Qgs -- 7.3 -- Gate-Drain Charge Qgd -- 15 --
SVFP10N60CAFJ/FJH_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 3 of 8 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current IS Integral Reverse P-N Junction Diode In The MOSFET -- -- 10 A Pulsed Source Current ISM -- -- 40 Diode Forward Voltage VSD IS=10A,VGS=0V -- -- 1.2 V Reverse Recovery Time Trr IS=10A,VGS=0V, dIF/dt=100A/µs (Note4) -- 530 -- ns Reverse Recovery Charge Qrr -- 4.80 -- µC Notes: 1. L=30mH, IAS=6.0A, VDD=100V, RG=25,starting TJ=25C; 2. VDS=0~400V, ISD<=12A, TJ=25C; 3. VDS=0~480V; 4. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%; 5. Essentially independent of operating temperature.
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resitance Variation vs. Figure 4. Body Diode Forward Voltage
2000 Ciss
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
SVFP10N60CAFJ/FJH_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 6 of 8 TYPICAL TEST CIRCUIT Same Type as DUT DUT VGS Ig VDS VGS 10V Charge Qg Qgs Qgd Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform VDS VGS RG RL VDD VGS VDS VGS 10% 90% td(on) ton tr td(off) toff tf Unclamped Inductive Switching Test Circuit & Waveform VDS RG VDD VGS L tp ID BVDSS IAS VDD tp Time VDS(t) ID(t) EAS = 1
2 LIAS
2 BVDSS
Vgs(th) Qg(th)
SVFP10N60CAFJ/FJH_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 7 of 8 PACKAGE OUTLINE TO-220FJ-3L UNIT: mm 2.80 4.42 4.70 2.30 2.54 5.02 3.102.50 2.76 0.850.55 1.29 0.650.35 0.50 16.2515.25 15.87 14.9713.97 14.47 11.5810.58 11.08 10.369.73 10.16 2.54BSC 7.006.40 6.68 13.4812.48 12.98 2.00 3.403.00 3.18 3.553.05 3.30 0.70 TO-220FJH-3L UNIT: mm 2.80 4.42 4.70 2.30 2.54 5.02 3.102.50 2.76 0.800.55 1.29 0.650.35 0.50 16.2515.25 15.87 13.2712.87 13.07 12.6812.28 12.48 10.369.73 10.16 2.54BSC 7.006.40 6.68 13.4812.48 12.98 3.403.00 3.18 3.553.05 3.30 0.70 0.85
SVFP10N60CAFJ/FJH_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,L TD Rev.:1.3 http: //www.silan.com.cn Page 8 of 8 Important notice : Part No.: SVFP10N60CAFJ/FJH Document Type: Datasheet Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn Rev.: 1.3 Revision History: 1. Motify Electrical schematic and TYPICAL TEST CIRCUIT Rev.: 1.2 Revision History: 1. Add TO-220FJH-3L Rev.: 1.1 Revision History: 1. Modify IDSS and VSD Rev.: 1.0 Revision History: 1. First Release The instructions are subject to change without notice！ Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. Our products are consumer electronic products, and / or civil electronic products. When using our products, please do not exceed the maximum rating of the produ cts, otherwise the reliability of the whole machine will be affected. There is a certain possibility of failure or malfunction of any semiconductor product under specifi c conditions. The buyer is responsible for complying with safety standards and taking safety measures when using our products for system design, sample and whole machine manufacturing, so as to avoid potential failure risk that may cause personal injury or property loss. It is strongly recommended to identify the trademark when buying our products. Please conatus us if there is any question. When exporting, using and reselling our products, buyer must comply with the international export control laws and regulations of China, the United States, the United Kingdom, the European Union and other countries & regions. Product promotion is endless, our company will wholeheartedly provide customers with better products! Website: http: //www.silan.com.cn