P10N60CAFJ

SGP10N60 INFINEON | Alldatasheet

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Technical content

SGB10N60, SGW10N60

1 Mar-00

Fast S-IGBT in NPT-technology G C E

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for: - Motor controls - Inverter
• NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Type VCE IC VCE(sat) Tj Package Ordering Code SGP10N60 600V 10A 2.2V 150°C TO-220AB Q67041-A4710-A2 SGB10N60 TO-263AB Q67041-A4710-A4 SGW10N60 TO-247AC Q67040-S4234 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current TC = 25°C TC = 100°C IC 10.9 Pulsed collector current, tp limited by Tjmax ICpuls 42 Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C - 42 A Gate-emitter voltage VGE ±20 V Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C EAS 70 mJ Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C tSC 10 µs Power dissipation TC = 25°C Ptot 104 W Operating junction and storage temperature Tj , T stg -55...+150 °C 1) Allowed number of short circuits: <1000; time between short circuits: >1s.

SGB10N60, SGW10N60

2 Mar-00

Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 1.2 Thermal resistance, junction – ambient R thJA TO-220AB TO-247AC SMD version, device on PCB1) RthJA TO-263AB 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE =0V, IC =500 µ A 600 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC =10A Tj =25 °C Tj =150 °C 1.7 2.2 2.4 2.7 Gate-emitter threshold voltage VGE(th) IC =300 µ A, VCE =VGE 345 V Zero gate voltage collector current ICES VCE =600V, VGE =0V Tj =25 °C Tj =150 °C 1500 µA Gate-emitter leakage current IGES VCE =0V, VGE =20V - - 100 nA Transconductance gfs VCE =20V, IC =10A -6 . 7- S Dynamic Characteristic Input capacitance Ciss - 580 696 Output capacitance Coss -7 0 8 4 Reverse transfer capacitance Crss VCE =25V, VGE =0V, f=1MHz -5 0 6 0 pF Gate charge QGate VCC =480V, IC =10A VGE =15V -6 4 8 3 n C Internal emitter inductance measured 5mm (0.197 in.) from case LE TO-220AB TO-247AC nH Short circuit collector current2) IC(SC) VGE =15V, tSC ≤ 10 µ s VCC ≤ 600V, Tj ≤ 150 °C - 100 - A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s.

SGB10N60, SGW10N60

3 Mar-00

Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -2 9 3 5 Rise time tr -2 1 2 5 Turn-off delay time td(off) - 233 280 Fall time tf -4 9 5 9 ns Turn-on energy Eon - 0.20 0.230 Turn-off energy Eoff - 0.17 0.221 Total switching energy Ets Tj =25 °C, VCC =400V, IC =10A, VGE =0/15V, RG =25 Ω , Energy losses include “tail” and diode reverse recovery. - 0.370 0.451 mJ Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) -2 9 3 5 Rise time tr -2 1 2 5 Turn-off delay time td(off) - 266 319 Fall time tf -6 3 7 6 ns Turn-on energy Eon - 0.297 0.342 Turn-off energy Eoff - 0.28 0.364 Total switching energy Ets Tj =150 °C VCC =400V, IC =10A, VGE =0/15V, RG =25 Ω Energy losses include “tail” and diode reverse recovery. - 0.577 0.706 mJ

4 Mar-00

Figure 1. Collector current as a function of Figure 2. Safe operating area Figure 3. Power dissipation as a function Figure 4. Collector current as a function of

5 Mar-00

Figure 5. Typical output characteristics Figure 6. Typical output characteristics Figure 7. Typical transfer characteristics Figure 8. Typical collector-emitter

6 Mar-00

Figure 9. Typical switching times as a Figure 10. Typical switching times as a Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage

7 Mar-00

Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses Figure 15. Typical switching energy losses Figure 16. IGBT transient thermal

8 Mar-00

Figure 17. Typical gate charge Figure 18. Typical capacitance as a Figure 19. Short circuit withstand time as a Figure 20. Typical short circuit collector

SGB10N60, SGW10N60

9 Mar-00

symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 TO-220AB dimensions symbol [mm] [inch] min max min max A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.1 typ. F 0.65 0.85 0.0256 0.0335 G 5.08 typ. 0.2 typ. H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N 15 typ. 0.5906 typ. P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R 8° max 8° max S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y 9.40 0.3701 TO-263AB (D2Pak) Z 16.15 0.6358

SGB10N60, SGW10N60

10 Mar-00

symbol [mm] [inch] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 ∅ P 3.61 0.1421 Q 6.12 6.22 0.2409 0.2449 TO-247AC

SGB10N60, SGW10N60

11 Mar-00

Figure A. Definition of switching times p(t) 12 n T( t )j n n τ TC rr r r rr Figure D. Thermal equivalent circuit Figure B. Definition of switching losses

SGB10N60, SGW10N60

12 Mar-00

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