OPS665 TTELEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
OPS665, OPS666, OPS667, OPS691, OPS692, OPS693, OPS698 © TT electronics plc Issue A 08/2016 Page 1 General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. TT Electronics | OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
sensors@ttelectronics.com | www.ttelectronics.com Description: Each LED/Photosensor pair in the series consists of a gallium arsenide infrared emitting diode and a NPN silicon phototransistor, mounted in a T-1 package (OPS665, OPS666, OPS667) or in a matched lateral side-looking plastic package (OPS691, OPS692, OPS693 and OPS698). Matched pairs are desirable where the application is unique and the quantity required does not justify assembly tooling costs. If separation between the LED and sensor is greater than two times the specified IC (ON) distance, proper alignment becomes critical. Although sold as pairs, emitters and sensors are packaged separately for handling ease. Please note that the sensor is sensitive to ambient light. Applications: Non-contact reflective object sensor Assembly line automation Machine automation Machine safety End of travel sensor Door sensor Features: High current transfer ratio Low-cost plastic package Lateral side-looking clear plastic package (OPS691, OPS692, OPS693 and OPS698) OPS665 - 667 OPS691 - 693 OPS698
Ordering Information
OPS665 Transistor T-1 Gallium arsenide infrared emitting diode (OP165) NPN silicon phototransistor (OP505) 0.50” (\1.700 mm) OPS666 Transistor T-1 Gallium arsenide infrared emitting diode (OP165) NPN silicon phototransistor (OP505) 0.50” (\1.700 mm) OPS667 Transistor T-1 Gallium arsenide infrared emitting diode (OP165) NPN silicon phototransistor (OP505) 0.50” (\1.700 mm) OPS691 Transistor Lateral Side-looking Gallium arsenide infrared emitting diode (OP140) NPN silicon phototransistor (OP550) 0.50” (\1.700 mm) OPS692 Transistor Lateral Side-looking Gallium arsenide infrared emitting diode (OP140) NPN silicon phototransistor (OP550) 0.50” (\1.700 mm) OPS693 Transistor Lateral Side-looking Gallium arsenide infrared emitting diode (OP140) NPN silicon phototransistor (OP550) 0.50” (\1.700 mm) OPS698 Transistor Lateral Side-looking Gallium arsenide infrared emitting diode (OP145) NPN silicon phototransistor (OP555) 0.50” (\`1.700 mm) RoHS
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Issue A 08/2016 Page 2 TT Electronics | OPTEK Technology, Inc. sensors@ttelectronics.com | www.ttelectronics.com OPS665, OPS666, OPS667, OPS691, OPS692, OPS693, OPS698 OPS691, OPS692, OPS693 Pin # LED X=0.060” (1.5mm) Sensor X=0” (0.0mm)
1 Cathode Emitter / Anode
2 Anode Collector / Cathode
Pin # LED X=0.060” (1.5 Sensor X=0” (0.0 mm)
1 Cathode Emitter/Anode
2 Anode Collector/Cathode
OPS665, OPS666, OPS667 Pin # LED & Diode X=0.060” (1.5 Transistor X=0” (0.0 mm)
1 Anode Emitter
2 Cathode Collector
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Issue A 08/2016 Page 3 TT Electronics | OPTEK Technology, Inc. sensors@ttelectronics.com | www.ttelectronics.com OPS665, OPS666, OPS667, OPS691, OPS692, OPS693, OPS698 OPS698 Pin # Diode
1 Cathode
2 Anode
Pin # Diode
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Issue A 08/2016 Page 4 TT Electronics | OPTEK Technology, Inc. sensors@ttelectronics.com | www.ttelectronics.com OPS665, OPS666, OPS667, OPS691, OPS692, OPS693, OPS698 Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage & Operating Temperature Range -40°C to +100°C Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron] 260°C(1) Input Diode Forward DC Current 50 mA Peak Forward Current (1 μs pulse width, 300 pps) 3.0 A Reverse DC Voltage 2.0 V Power Dissipation 100 mW(2) Output Photosensor (OPS665/666/667) or Output Phototransistor (691/692/693/698) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation 100 mW(2) Electrical Specifications
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Issue A 08/2016 Page 5 TT Electronics | OPTEK Technology, Inc. sensors@ttelectronics.com | www.ttelectronics.com OPS665, OPS666, OPS667, OPS691, OPS692, OPS693, OPS698 Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode VF Forward Voltage - - 1.6 V IF = 20 mA IR Reverse Current - - 100 µA VR = 2 V Output Phototransistor V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V IC = 100 µA, EE = 0 V(BR)ECO Emitter-Collector Breakdown Voltage 5.0 - - V IE = 100 µA, EE = 0 ICEO Collector-Emitter Dark Current OPS665/666/667 OPS691/692/693 OPS698 100 100 100 nA nA nA VCE = 15 V, IF = 0, IE = 0 VCE = 10 V, IF = 0, IE = 0 VCE = 10 V, IF = 0, IE = 0 Combined VCE(SAT) Collector-Emitter Saturation Voltage OPS665/666/667 OPS691/692/693 OPB698 0.4 0.4 V V IF = 20 mA, IC = 50 µA(3) IF = 20 mA, IC = 50 µA(3) IC(ON) On-State Collector Current OPS665 OPS666 OPS667 OPS691 OPS692 OPS693, OPS698 0.5 1.0 5.0 500 1.0 2.0 mA mA mA µA mA mA VCE = 5 V, IF = 20 mA(3) VCE = 10 V, IF = 20 mA(3) Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.33 mW/° C above 25° C. (3) Distance from lens tip to lens tip is 0.250” (6.35 mm) - OPS665, OPS666, OPS667 Distance from lens tip to lens tip is 0.125” (3.175 mm) - OPS691 thru OPS698
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Issue A 08/2016 Page 6 TT Electronics | OPTEK Technology, Inc. sensors@ttelectronics.com | www.ttelectronics.com OPS665, OPS666, OPS667, OPS691, OPS692, OPS693, OPS698 Performance OPS665, OPS666, OPS667
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Issue A 08/2016 Page 7 TT Electronics | OPTEK Technology, Inc. sensors@ttelectronics.com | www.ttelectronics.com OPS665, OPS666, OPS667, OPS691, OPS692, OPS693, OPS698 Performance OPS691, OPS692, OPS693
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Issue A 08/2016 Page 8 TT Electronics | OPTEK Technology, Inc. sensors@ttelectronics.com | www.ttelectronics.com OPS665, OPS666, OPS667, OPS691, OPS692, OPS693, OPS698 Performance OPS698