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Technical content

The OPR5200 is a miniature high efficiency GaAIAs light emitting diode in a high temperature polyamide chip carrier that is well suited to space-limited applications which require close channel spacing. The OPR5500 is a miniature NPN silicon phototransistor housed in a high temperature polyamide chip carrier that is well suited to space-limited applications which require close channel spacing. When combing the OPR5200 and OPR5500 (miniature phototransistor), this lateral mounting option can be used to create a non-focused reflective or slotted switch configuration. These parts can be automatically placed with standard SMD equipment and can be reflow soldered by virtually any conventional means. Wraparound contacts allow it to be mounted face up or on edge for a beam direction parallel to the seating plane. See Application Bulletin 237 for handling instructions  Slotted switches  Industrial environments  Space-limited

applications

 Stackable on 2 mm centers  Vertical or horizontal mounting  Automatic pick-and-place compatible  Combine OPR5200 and OPR5500 to create miniature switch

Ordering Information

(µW) Min IF (mA) Typ / Max Total Beam Angle (Degrees) Rise / Fall Times (nS) Typ Packaging OPR5200 890 nm 350 20 / 50 90 500 / 250 Chip Tray Part Number Sensor Light Current IC(ON) (µA) Min VCE Max Input Power EE (µW/cm2) Viewing Angle (Degrees) Packaging OPR5500 Transistor 36 30 150 120 Chip Tray Pin # LED

1 Anode

2 Cathode

3 N.C. OPR5200 INCHES [MILLIMETERS]DIMENSIONS ARE IN: TOLERANCE IS ± .005 [0.13] Pin # Transistor

1 Collector

2 Emitter

3 Base

Trans. NPNBase Collector Emitter

3 Warning: Front Win-

tive. Do not apply pressure or high vacu- um to window. RoHS

Storage and Operating Temperature -55° C to +125° C Continuous Forward Current 50 mA Peak Forward Current (1 µs pulse width, 10% duty cycle) 1.0 A Power Dissipation(1) 100 mW Solder reflow time within 5°C of peak temperature is 20 to 40 seconds (2) 250° C PO Output Power 350 - - µW IF = 20 mA VF Forward Voltage - - 1.8 V IF = 20 mA IR Reverse Current - - 100 µA VR = 2 V λP Peak Wavelength - 890 - nm IF = 20 mA λBW Spectral Bandwidth - 80 - nm IF = 20 mA HP Emission Angle - ±45° - - at half power points tr Output Rise Time - 500 - ns IP = 100 mA, PW = 10.0 µs, D.C. = 10% tf Output Fall Time - 250 - ns Notes: (1) Derate at 1.00 mW/° C above 25° C. (2) Solder time less than 5 seconds at temperature extreme.

Storage and Operating Temperature -55° C to +125° C Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Power Dissipation(1) 100 mW Solder reflow time within 5°C of peak temperature is 20 to 40 seconds (2) 250° C IC(ON) On-State Collector Current 36 - - µA VCE = 5 V, Ee = 150 µW/cm2 (890 nm light source) ICEO Dark Current - - 100 nA VCE = 5 V, Ee = 0 V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V IC = 100 µA V(BR)ECO Emitter-CollectorBreakdown Voltage 5 - - V IE = 100 µA V(SAT) Saturation Voltage - - 0.4 V IC = 100 µA, Ee = 5 mW/cm2 tr, tf Output Rise and Fall Time - 2.5 - µs VCC = 5 V, IC = 800 µA, RL = 100 Ω Notes: (1) Derate at 1.00 mW/° C above 25° C. (2) Solder time less than 5 seconds at temperature extreme.