OPR2800T TTELEC | Alldatasheet

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Infrared Light Emitting Diode OPR2800T © TT electronics plc Rev D 09/2016 Page 1 TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.Ʃelectronics.com | sensors@Ʃelectronics.com General Note TT Electronics reserves the right to make changes in product specificaƟon without noƟce or liability. All informaƟon is subject to TT Electronics’ own data and is considered accurate at Ɵme of going to print. Description: The OPR2800T is a GaAIAs infrared LED mounted in a surface mount chip carrier (SMCC) package with a flat lens window that allows a wide beam angle. The SMCC format has a lower height profile than the PLCC‐2 package and mounts in the same footprint. The device is suitable for use in single device or array applicaƟons. The OPR2800T is spectrally matched to the OPR5500 phototransistor. See ApplicaƟon BulleƟn 237 for handling instrucƟons. Applications: Non‐contact posiƟon sensing Datum detecƟon Machine automaƟon OpƟcal encoding Features: High‐power GaAIAs Matches PLCC‐2 footprint 875 nm wavelength Wide beam angle Wide operaƟng temperature range (‐40o C to +100o C) Ordering InformaƟon Part Number LED Peak Wavelength Total Beam Angle Packaging 875 nm 100° OPR2800T Tape & Reel Pin # LED

1 Anode

2 Cathode

Warning: Front Window is pressure sensiƟve. Do not apply pressure or high vacuum to window. RoHS

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specificaƟon without noƟce or liability. All informaƟon is subject to TT Electronics’ own data and is considered accurate at Ɵme of going to print. Infrared Light Emitting Diode OPR2800T Rev D 09/2016 Page 2 TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.Ʃelectronics.com | sensors@Ʃelectronics.com Absolute Maximum RaƟngs (TA = 25° C unless otherwise noted) Storage Temperature Range ‐55o C to +125o C OperaƟng Temperature Range ‐40o C to +100o C Reverse Voltage 30 V ConƟnuous Forward Current 50 mA Solder reflow Ɵme within 5°C of peak temperature is 20 to 40 seconds(1) 250° C Power DissipaƟon 130 mW(2) Electrical CharacterisƟcs (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Ee (APT) Apertured Radiant Incidence 0.2 ‐ ‐ mW/ cm2 IF = 20 mA(3) VF Forward Voltage ‐ ‐ 1.50 V IF = 50 mA IR Reverse Current ‐ ‐ 100 µA VR= 2.0 V λP Wavelength at Peak Emission 875 ‐ nm IF = 10 mA θHP Emission Angle at Half Power Points ‐ 100 ‐ Degree IF = 20 mA tr, tf Output Rise Time, Output Fall Time ‐ ‐ 500 ns IF(PK) = 100 mA, PW = 10 µs, D.C. = 10.0% Notes: 1. Solder Ɵme less than 5 seconds at temperature extreme. 2. Derate linearly at 1.39 mW/° C above 25° C. 3. Ee(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. EE(APT) is not necessarily uniform within the measured area. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current I F (mA) Normalized Optical Power -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Normalized at 50 mA and 20° C OpƟcal Power vs IF vs Temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Forward Current (mA) Typical Forward Voltage (V) -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120°C Forward Voltage vs Forward Current vs Temperature OPR2800T Electrical Specifications