OPI210 TTELEC | Alldatasheet

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OPI210, OPI211 © TT electronics plc Issue B 09/2017 Page 1 General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. TT Electronics | Optek Technology, Inc. 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Description: Each Optically coupled isolator in this data sheet contains an infrared Light Emitting Diode (LED) and a NPN silicon Photosensor. The OPI210 and OPI211 devices have 890 nm Light Emitting Diode (LED) and NPN phototransistor and coupled on an FR-4 substrate. The devices are made with a sealed internal optically transmissive path between the LED and the photosensor. The OPI210 and OPI211 are identical except for the DC current transfer ratio. Both were designed with high reliability in mind and are ideally suited for use in MIL-STD-883 applications. The devices may be mounted using either silver or gold filled epoxies. The top of the device is covered with a silicone material and is very sensitive to acetone type cleaning material. This series is designed for transmission of information between one power supply voltage to another where the potentials during surge conditions are not greater than the guaranteed isolation voltage. Contact your local representative or OPTEK for more information. Applications:  Military equipment  High-Reliability environments  High voltage isolation between input and output  Electrical isolation in dirty environments  Medical equipment  Office equipment Features:  1kV electrical isolation  Miniature package ideal for surface mount applications  TTL, DTL compatible  High DC Current Transfer ratio

Ordering Information

(,000) CTR Typical IF (mA) Typ / Max VCE (Volts) Max OPI210 890 nm Transistor 1 200 10 / 50 35 OPI211 350 0.070 [1.78] 0.090 [2.29] 0.090 [2.29] 0.004 [0.10]

8 Places

0.025 [0.64] Square 4 Places Emitter (3) Collector (4) Anode (1) Cathode (2) White Dot Anode (1) OPI210, OPI211 1 3 2 4 RoHS Pin # LED Pin # Transistor

1 Anode 4 Collector

2 Cathode 3 Emitter

[MILLIMETERS]DIMENSIONS ARE IN:

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Issue B 09/2017 Page 2 TT Electronics | Optek Technology, Inc. 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com OPI210, OPI211 Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Storage Temperature -65° C to +150° C Operating Temperature -55° C to +125° C Input-to-Output Isolation Voltage(1)(2) ± 1 kVDC Lead Soldering Temperature (1/16” (1.6 mm) from case for 5 seconds with soldering iron)(3) 260° C Input Diode Forward DC Current(4) 50 mA Reverse DC Voltage 3 V Power Dissipation(5) 60 mW Output Photosensor Collector-Emitter Voltage 35 V Emitter-Collector Voltage 7.0 V Power Dissipation(6) 100 mW Notes: (1) Measured with input and output leads shorted. Typical input/output capacitance is 0.06 pF. (2) UL recognition is for 3500 VAC for one minute. (3) RMA flux is recommended. The duration can be extended to 10 seconds maximum when flow soldering. (4) Derate linearly 0.67 mA/°C above 25°C. (5) Derate linearly 0.83 mA/°C above 25°C. (6) Derate linearly 1.67 mA/°C above 25°C. Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP265 for additional information - for reference only) VF Forward Voltage - - 1.6 V IF = 10 mA IR Reverse Current - - 100 µA VR = 2 V Output Photosensor (See OP505 for additional information - for reference only) V(BR)CEO Collector-Emitter Breakdown Voltage 35 80 - V IC = 100 µA, IF = 0 V(BR)ECO Emitter-Collector Breakdown Voltage 7 10 - V IE = 100 µA, IF = 0 ICEO Collector-Emitter Dark Current - 20 100 nA VCE = 20 V, IF = 0 Coupled IC/IF DC Current Transfer Ratio OPI210 OPI211 200 200 350 IF = 10 mA, VCE = 5 V VCE(SAT) Collector Saturation Voltage - 0.2 0.3 V IF = 20 mA, IC = 2 mA Tr & tf Rise Time - 3.0 10 µs VCC = 10 V, RL = 100Ω, Pulse width = 100 ms, duty cycle = 1%

© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Issue B 09/2017 Page 3 TT Electronics | Optek Technology, Inc. 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com OPI210, OPI211 On State Collector Current Vs Temperature Vs Forward Current 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 IF - LED Forward Current (mA) IC(ON) - Normalized On State Collector Current -55°C -35°C -15°C +5°C +25°C +45°C +65°C +85°C +105°C +125°C Normalized at 10 mA and 25°C Forward Voltage Vs Forward Current Vs Ambient Temperature 1.1 1.2 1.3 1.4 1.5 0 10 20 30 40 50 IF - LED Forward Current (mA) VF - LED Forward Voltage (V) -55°C -35°C -15°C +5°C +25°C +45°C +65°C +85°C +105°C +125°C OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.