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High Reliability Optically Coupled Isolator OPI150TX, OPI150TXV © TT electronics plc Issue B 11/2016 Page 1 OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: Each OPI150TX and OPI150TXV is an opƟcally coupled isolator that consists of a gallium aluminum arsenide infrared light emiƫng diode (OP235TX or OP235TXV) which is opƟcally coupled to a NPN silicon phototransistor component (OP804TX or OP804TXV) by means of a light pipe and sealed in a high dielectric plasƟc housing. These devices are designed for applicaƟons that require high voltage isolaƟon between input and output. TX and TXV device components are processed to OPTEK’s military screening program paƩerned aŌer MIL‐PRF‐19500. Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data. Contact your local representaƟve or OPTEK for more informaƟon. Applications: Requiring high voltage isolation between input and output Electrical isolation in dirty environments Industrial equipment Medical equipment Office equipment Features: High current transfer ratio 50 kV electrical isolation Base contact lead for conventional transistor biasing TX and TXV devices processed to MIL-PRF-19500 Part Number LED Peak Wavelength Sensor IsolaƟon Voltage (,000) CTR Min / Max IF (mA) Typ / Max VCE (Volts) Max Lead Length / Spacing OPI150TX 890 nm Transistor 50 10 / NA 16 / 50 30 0.40" / 3.16" OPI150TXV * CATHODE LEAD. OTHER LEADS ARE .060 (1.52) NOM LONGER. DIMETNSION ARE IN INCHES (MILLIMETERS) ** THIS DIMENSION IS CONTROLLED AT THE HOUSING SURFACE Pin# LED Pin# Transistor
1 Anode 4 Collector
2 Cathode 3 EmiƩer
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. High Reliability Optically Coupled Isolator OPI150TX, OPI150TXV Issue B 11/2016 Page 2 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Notes: (1) Measured with input leads shorted together and output leads shorted together in air with a maximum relaƟve humidity of 50%. (2) Derate linearly 2.00 mW/° C above 25° C. (3) Derate linearly 2.50 mW/° C above 25° C. (4) Methanol or isopropanol are recommended as cleaning agents. (5) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. HeaƟng due to increased pulse rate or pulse width can cause change in measurement results. Absolute Maximum RaƟngs (TA = 25° C unless otherwise noted) OperaƟng Temperature Range ‐65° C to +125° C Storage Temperature Range ‐65° C to +150° C Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 seconds with soldering iron] 260° C Input Diode ConƟnuous Forward Current 100 mA Reverse Voltage 2 V Power DissipaƟon(2) 200 mW Output Photosensor Collector‐EmiƩer Voltage 50 V EmiƩer‐Base Voltage 7 V Power DissipaƟon(3) 250 mW Input‐to‐Output IsolaƟon Voltage(1) ±50 kVDC Collector‐Base Voltage 50 V ConƟnuous Collector Current 50 mA Electrical CharacterisƟcs (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP236TX for addiƟonal informaƟon ‐ for reference only) VF Forward Voltage(5) 1.00 1.40 1.70 V IF = 30 mA 1.20 1.60 1.90 IF = 30 mA, TA = ‐55° C 0.90 1.15 1.50 IF = 30 mA, TA = 100° C IR Reverse Current ‐ 0.10 10 µA VR = 2 V Output Phototransistor (See OP805TX for addiƟonal informaƟon ‐ for reference only) V(BR)CBO Collector‐Base Breakdown Voltage 50 10 ‐ V IC = 100 µA , IE = 0, IF = 0 V(BR)CEO Collector‐EmiƩer Breakdown Voltage 50 80 ‐ V IC = 1 mA , IB= 0, IF = 0 V(BR)EBO EmiƩer‐Base Breakdown Voltage 7 11 ‐ V IE = 100 µA , IC = 0, IF = 0 ICEO Collector‐EmiƩer Dark Current ‐ 0.20 100 na VCE = 10 V, IB = 0, IF = 0 ‐ 10 100 µA VCE = 10 V, IB = 0, IF = 0, TA = 100° C ICBO Collector‐Base Dark Current ‐ 0.10 10 nA VCB = 10 V, IE = 0, IF = 0
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. High Reliability Optically Coupled Isolator OPI150TX, OPI150TXV Issue B 11/2016 Page 3 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Notes: (1) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. HeaƟng due to increased pulse rate or pulse width can cause change in measurement results. (2) Measured with input leads shorted together and output leads shorted together in air with a maximum relaƟve humidity of 50%. Electrical CharacterisƟcs (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Combined IC(ON) On‐State Collector Current(1) 1.0 ‐ ‐ VCE = 5 V, IB = 0, IF = 10 mA 0.6 ‐ ‐ VCE = 5 V, IB = 0, IF = 10 mA, TA = ‐55° C 0.6 ‐ ‐ VCE = 5 V, IB = 0, IF = 10 mA, TA = 100° C VCE(SAT) Collector‐EmiƩer SaturaƟon Voltage ‐ 0.20 0.30 V IC = 1 mA, IB = 0, IF = 16 mA VISO IsolaƟon Voltage (Input to Output)(2) 50 ‐ ‐ kV See note 2. tr Output Rise Time ‐ 8 15 µs VCC = 10 V, IC = 2 mA, RL = 100Ω tf Output Fall Time ‐ 8 15 mA