OPE5594S ROITHNER | Alldatasheet
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GaAlAs Infrared Emitter /G67b/G67b/G67b/G67b OPE5594S The OPE5594S is GaAlAs infrared emitting diode DIMENSIONS (Unit:mm) that is designed for high reliability, high radiant intensity and low forward voltage .This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1- 3/4 plastic package and has medium beam angle with lensed package and cup frame. FEATURES/G67b
- High-output power/G67b
- Medium beam angle
- High reliability and long term stability
- Available for pulse operating /G67b APPLICATIONS/G67b
- Optical emitters
- Optical switches
- Smoke sensors
- IR remote control
- IR sound transmission STORAGE
- Condition : 5°C~35°C,R.H.60%
- Terms : within 3 months from production date
- Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS/G67b /G67b /G67b /G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b(Ta=25°C ) Item Symbol Rating Unit Power Dissipation P D/G67b 150 /G6c8/G6b2/G67b Forward current I F/G67b 100 /G6c8/G69c/G67b Pulse forward current /G67b/G67b/G67b/G67b/G67b/G67b IFP/G67b 1.0 A /G67b Reverse voltage V R/G67b 5.0 /G6b1/G67b Operating temp. Topr. -25~ +85 °C/G67b S o l d e r i ng temp. /G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G6852 Tsol. 260 . °C/G67b /G6851.Duty ratio = 1/100, pulse width=0.1ms. /G6852.Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICALCHARACTERISTICS (Ta=25°C) Item Symbol Conditions Min. Typ. Max. Unit Forward voltage V F I F =100mA 1.4 1.7 V Reverse current I R V R= 5V 10 µA Capacitance Ct f = 1 MHz 20 pF Radiant intensity Ie I F=100mA 60 mW/ /Gefa Peak emission wavelength /Gd1bp I F= 100mA 940 nm Spectral bandwidth 50% /Gcfc/Gd1b I F= 100mA 45 nm H a l f a n g l e /Gcfc/Gd18 I F=100mA ±10 deg. 2-/Gcd60.5
24.0 Min
/Gf5b /Gf5c 2.5 2.0 /Gf5b Anode /Gf5c Cathode 8.7 7.7
1.3 Max
5.7 5.0 Tolerance : ±0.2mm
/G67b/G67b G a A l A s I n f r a r e d E m i t t e r OPE5594S /circle6 FORWARD CURRENT Vs. FORWARD VOLTAGE 100 Forward Voltage VF(V) Ta=25/Gb07 /circle6 RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. /circle6 RELATIVE RADIANT INTENSITY Vs. EMISSION WA VELENGTH. 1.0 0.8 0.6 0.4 0.2 0.0 800 850 900 950 1000 1050 Emission Wavelength /Gd1b/Gd1b/Gd1b/Gd1b(nm) Ta=25/Gb07 0.8 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 100 Ambient Temperature Ta(/Gb07/Gb07/Gb07/Gb07) IF=100mA /circle6 ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY 20° 30° 40° 50° 60° 70° 80° -20° -30° -40° -50° -60° -70° -80° -90° -10° 10° 0° 1 . 0 0 . 5 0 0 . 5 1 . 0 90° Relative Radiant intensity Ta=25/Gb07 /circle6 RADIANT INTENSITY Vs. FORWARD CURRENT. /circle6 FORWARD CURRENT Vs. AMBIENT TEMP. 100 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 Ambient Temperature Ta(/Gb07/Gb07/Gb07/Gb07) Ta=25 400 200 100 0.5 0.3 0.1 1 3 5 10 30 50 100 2 00 500 Forward Current IF(mA) Ta=25