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Document overview
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Technical content
Each slotted optical switch in this series consists of an infrared emitting diode (LED) and a NPN silicon phototransistor mounted on opposite sides of a 0.90” (22.9 mm) wide slot in an opaque black plastic package. The OPB315L has 0.25” minimum leads, while the OPB315WZ has a minimum of 24” (610 mm) 26 AWG wires. Phototransistor switching takes place whenever an opaque object passes through the slot. Non-contact object sensing Assembly line automation Machine automation Equipment security Machine safety Lateral package Opaque black plastic 850 nm wavelength Choice of leads or wires OPB315WZ OPB315L
Ordering Information
850 nm Transistor 0.90"/0.46” 0.03” R / 0.03” R 0.25” / N/A OPB315WZ 24” min/
26 AWG wires
Pin # LED Pin # Transistor
1 Anode 3 Collector
2 Cathode 4 Emitter
NOTES: 1. TOLERANCES ARE ± 0.010 [0.254] UNLESS OTHERWISE SPECIFIED. INCHES [MILLIMETERS]DIMENSIONS ARE IN: White Dot RoHS
Pin #/ Color LED Pin #/ Color Transistor Black Cathode White Collector Red Anode Green Emitter NOTES: 1. TOLERANCES ARE ± 0.010 UNLESS OTHERWISE SPECIFIED. INCHES [MILLIMETERS]DIMENSIONS ARE IN: Red White Green
Storage Temperature Range -40o C to +80o C Operating Temperature Range -40o C to +80o C Reverse Voltage 2.0 V Continuous Forward Current 50 mA Peak Forward Current [measured at 1 µs pulse width and 300 pps] 1.0 A Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1)(2) Power Dissipation (Input Diode) 100 mW Power Dissipation (Output Phototransistor) 100 mW Input Diode VF Forward Voltage - 1.4 1.7 V IF = 20 mA IR Reverse Current - - 100 µA VR = 2 V Output Phototransistor (see OP550 for additional information) V(BR)(CEO) Collector-Emitter Breakdown Voltage 30 - - V ICE = 100 µA, IF = 0 mA V(BR)(ECO) Emitter-Collector Breakdown Voltage 5.0 - - V IEC = 100 µA, IF = 0 mA, EE = 0 ICEO Collector-Emitter Leakage Current - - 100 nA VCE = 10.0 V, IF = 0 mA, EE = 0 Coupled IC(ON) On-State Collector Current 0.5 1.0 - mA VCE = 0.4 V, IF = 20 mA VCE(SAT) Collector-Emitter - - 0.4 V IC = 500 µA, IF = 20 mA Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 2. Derate linearly 1.33 mW/° C above 25° C.
Forward Voltage vs Forward Current vs Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 35 40 45 50 Forward Current (mA) Typical Forward Voltage (V) -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C 120° C Optical Power vs Forward Current vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 Forward Current IF (mA) Relative Output Power -60° C -40° C -20° C 0° C 20° C 40° C 60° C 80° C 100° C Normalized at IF = 20 mA, TA = 20°C OPB315 - Flag Next to Sensor 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Displacement Distance (inches) Normalized IC(ON) Response Left to Right Right to Left Top to Bottom OPB315 - Flag Next to Emitter 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Displacement Distance (inches) Normalized IC(ON) Response Left to Right Right to Left Top to Bottom