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Technical content
The OPB200 contains an Infrared LED (890 nm) and a Phototransistor paired in a plastic housing. The housing is an opaque grade of injection-molded plastic, which minimizes the assembly’s sensitivity to visible and near - infrared radiation. Each device has approximately 0.060” [1.52 mm] diameter lenses providing the versatility necessary for general switching applications. The output Phototransistor ON state conducts current (IC(ON)) when no object is in the slot. The output switches to the OFF state when a device interrupts the light beam from the Emitter (LED) to the Phototransistor. The Phototransistor can acknowledge light between 400 nm and 1100 nm with optimum response in the 880 nm range. Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Non-contact interruptive object sensing Assembly line automation Machine automation Equipment security Machine safety Housing material Opaque to visible and infrared light Non–contact switching Printed PCBoard mount 0.200” (5.1 mm) slot width, 0.320” (8.1 mm) slot depth Pin # Description
1 Anode
2 Cathode
3 Collector
4 Emitter
Ordering Information
OPB200 890 nm Transistor 0.200” / 0.320” None 0.425” / 0.400 1 4 2 3 DIMENSIONS ARE IN: INCHES [ MILLIMETERS] RoHS
Storage & Operating Temperature Range -40°C to +85°C Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron] (1) 260°C Input Diode Forward DC Current 50 mA Peak Forward Current (1 μs pulse width, 300 pps) 3 A Reverse DC Voltage 2 V Power Dissipation(2) 100 mW Output Phototransistor Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Collector DC Current 30 mA Power Dissipation(2) 100 mW Input Diode (see OP140 for additional information) VF Forward Voltage - - 1.7 V IF = 20 mA IR Reverse Current - - 100 µA VR = 2 V Output Phototransistor (see OP550 for additional information) V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V IC = 1 mA V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IE = 100 µA ICEO Collector Dark Current - - 100 nA VCE = 10 V, IF = 0, EE = 0 Combined VCE(SAT) Collector-Emitter Saturation Voltage - - 0.4 V IC = 100 µA, IF = 20 mA IC(ON) On-State Collector Current 1 4 6 mA VCE = 0.4 V, IF = 20 mA Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.67 mW/°C above 25 ° C. (3) All parameters tested using pulse techniques. (5) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. (6) Polarity is denoted by a notch next to pin 1 (LED Anode) of the package.
OPB200 - Flag in Middle of Slot 0.00 0.20 0.40 0.60 0.80 1.00 1.20 Displacement Distance (inches) Typical IC(ON) Response (mA) Right to Left Left to Right Top to Bottom OPB200 - Flag Next to Emitter 0.00 0.20 0.40 0.60 0.80 1.00 1.20 Displacement Distance (inches) Typical IC(ON) Response (mA) Right to Left Left to Right Top to Bottom OPB200 - Flag Next to Sensor 0.00 0.20 0.40 0.60 0.80 1.00 1.20 Displacement Distance (inches) Typical IC(ON) Response (mA) Right to Left Left to Right Top to Bottom Emitter Sensor Left to Right Right to Left